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3SK177

3SK177

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    3SK177 - RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MO...

  • 数据手册
  • 价格&库存
3SK177 数据手册
DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK177 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD FEATURES • Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB TYP. • Low NF : 1.1 dB TYP. PACKAGE DIMENSIONS in millimeters 0.4+0.1 –0.05 1.5+0.2 –0.1 2 3 4 5˚ 0.4+0.1 –0.05 0.16 5˚ +0.1 –0.06 29.02 (1.8) 0.850.95 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate 1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S VG2S ID PT Tch Tstg 13 –4.5 –4.5 40 200 125 –55 to +125 V V V mA mW ˚C ˚C 0.6+0.1 –0.05 +0.2 1.1–0.1 0.8 1 5˚ (1.9) 5˚ TEST CONDITIONS VG1S = –4 V, VG2S = 0, ID = 10 µA VDS = 5 V, VG2S = 0, VG1S = 0 VDS = 5 V, VG2S = 0, ID = 100 µA VDS = 5 V, VG1S = 0, ID = 100 µA VDS = 0, VG1S = –4 V, VG2S = 0 VDS = 0, VG2S = –4 V, VG1S = 0 VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 kHz VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz 0 to 0.1 1. Source 2. Drain 3. Gate 2 4. Gate 1 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 TO Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transter Admittance SYMBOL BVDSX IDSS VG1S(off) VG2S(off) IG1SS IG2SS | yfs | 18 25 MIN. 13 5 20 40 –3.5 –3.5 10 10 35 TYP. MAX. UNIT V mA V V µA µA ms Input Capacitance Reverse Transfer Capacitance Power Gain Noise Figure Ciss Crss GPS NF 0.5 1.0 0.02 1.5 0.03 pF pF dB 16.0 20.0 1.1 2.5 dB IDSS Classification Class Marking IDSS U71 U71 5 to 15 U72 U72 10 to 25 U73 U73 20 to 35 Unit: mA U74 U74 30 to 40 Document No. P10412EJ1V0DS00 (1st edition) (Previous No. TN-1877) Date Published August 1995 P Printed in Japan 0.4+0.1 –0.05 2.8+0.2 –0.3 © 1995 3SK177 TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 PT – Total Power Dissipation – mW DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE VDS = 5 V ID – Drain Current – mA 400 VG2S = 1.0 V 20 300 0.5 V 10 0V 200 100 –0.5 V 0 0 25 50 75 100 125 –1.0 0 +1.0 TA – Ambient Temperature – ˚C FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE 30 30 VDS = 5 V f = 1 kHz VG2S = 1.0 V 20 0.5 V yfs – Forward Transfer Admittance – mS VG1S – Gate 1 to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 5 V f = 1 kHz VG2S = 1.0 V 20 VG2S = 0.5 V yfs – Forward Transfer Admittance – mS 10 0V 10 –0.5 V 0 –1.0 0 INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 2.0 VDS = 5 V f = 1 MHz +1.0 0 10 20 30 VG1S – Gate 1 to Source Voltage – V ID – Drain Current – mA FOWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE 10 30 VDS = 5 V VG2S = 1 V at ID = 10 mA f = 900 MHz Ciss – Input Capacitance – pF 15 NF – Noise Figure – dB GPS – Power Gain – dB GPS 0 VG2S = 1 V at ID = 10 mA 1.0 VG2S = 1 V at ID = 5 mA 5 –15 –30 NF 0 –1.0 0 VG2S – Gate 2 to Source Voltage – V +1.0 0 –45 –3.0 –2.0 –1.0 0 +1.0 +2.0 VG2S – Gate 2 to Source Voltage – V 2 3SK177 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE 10 10 20 GPS 20 NF – Noise Figure – dB NF – Noise Figure – dB GPS – Power Gain – dB GPS – Power Gain – dB 25 POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT VDS = 5 V VG2S = 1 V f = 900 MHz GPS 15 5 10 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V ID = 10 mA f = 900 MHz 5 10 5 NF NF 0 0 0 10 0 5 ID – Drain Current – mA 10 5 VDS – Drain to Source Voltage – V S-PARAMETER (VDS = 5 V, VG2S = 1 V, ID = 10 mA) FREQUENCY MHz MAG S11 ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG 100.0000 200.0000 300.0000 400.0000 500.0000 600.0000 700.0000 800.0000 900.0000 1000.0000 1100.0000 1200.0000 0.999 1.000 0.998 0.974 1.005 0.942 0.968 0.920 0.952 0.898 0.915 0.879 –3.3 –7.2 –9.3 –13.4 –15.7 –19.1 –22.2 –25.2 –28.9 –29.4 –35.1 –35.2 2.359 2.389 2.313 2.233 2.420 2.300 2.332 2.229 2.447 2.303 2.348 2.367 177.2 169.3 164.4 160.0 l58.4 150.0 145.5 141.5 136.8 131.1 125.8 123.5 0.006 0.004 0.000 0.004 0.007 0.003 0.004 0.008 0.004 0.001 0.004 0.000 –122.3 123.0 –145.0 79.2 29.7 65.0 45.5 80.1 8.3 50.9 71.4 91.1 0.969 0.981 0.979 0.967 0.999 0.958 0.997 0.957 0.999 0.968 0.984 0.989 –1.3 –2.9 –3.3 –5.6 –5.8 –7.7 –8.5 –9.4 –12.5 –11.1 –14.8 –13.0 3 3SK177 900 MHz GPS AND NF TEST CIRCUIT VG2S (1 V) 1 000 pF 47 kΩ 1 000 pF to 10 pF to 10 pF INPUT 50 Ω L1 47 kΩ RFC to 10 pF to 10 pF L2 OUTPUT 50 Ω 1 000 pF 1 000 pF L1, L2, 35 × 5 × 0.2 mm VG1S VDD (5 V) VDS = 5 V, VG2S = 1 V, ID = 10 mA 4 3SK177 [MEMO] 5 3SK177 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2
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