3SK206

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK206 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD FEATURES • • • • Suitable for Low Crss: High GPS: Low NF: use as RF amplifier in UHF TV tuner. 0.02 pF TYP. 20 dB TYP. 1.1 dB TYP. 2.9±0.2 PACKAGE DIMENSIONS in millimeters 0.4 –0.05 1.5 +0.2 –0.1 2.8 –0.3 +0.2 2 0.95 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDSX VG1S VG2S ID PT Tch Tstg 10 –4.5 –4.5 80 200 125 –55 to +125 V V V mA mW °C °C 3 (1.9) 0.95 1 +0.1 –0.05 4 5° 5° 1.1 +0.2 –3.1 0.8 0.4 +0.1 –0.05 0.6 5° 1. 2. 3. 4. 0 to 0.1 5° ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Power Gain Noise Figure SYMBOL BVDSX IDSS VG1S(off) VG2S(off) IG1SS IG2SS | yfs | Ciss Crss GPS NF 16.0 25 1.0 35 1.5 0.02 20.0 1.1 2.5 2.0 0.035 MIN. 10 10 80 –3.5 –3.5 10 10 TYP. MAX. UNIT V mA V V Source Drain Gate 2 Gate 1 TEST CONDITIONS VG1S = –4 V, VG2S = 0, ID = 20 µA VDS = 5 V, VG1S = 0, VG2S = 0 VDS = 5 V, VG2S = 0, ID = 100 µA VDS = 5 V, VG1S = 0, ID = 100 µA VDS = 0, VG1S = –4 V, VG2S = 0 VDS = 0, VG2S = –4 V, VG1S = 0 VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 kHz VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 MHz VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz µA µA mS pF pF dB dB IDSS Classification (Unit: mA) Class Marking IDSS U76 U76 10 to 25 U77 U77 20 to 35 U78 U78 30 to 50 U79 U79 45 to 80 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. Document No. P10568EJ2V0DS00 (2nd edition) (Previous No. TC-2134) Date Published August 1995 P Printed in Japan © 0.16–0.06 +0.1 (1.9) 0.4 +0.1 –0.05 +0.1 1995 1987 3SK206 TYPICAL CHARACTERISTICS (TA = 25 °C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 10 POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE 30 VDS = 5 V VG2S = 1 V at ID = 10 mA f = 900 MHZ PT – Total Power Dissipation – mW Free Air 400 GPS NF – Noise Figure – dB 300 GPS – Power Gain – dB 15 0 200 5 –15 100 –30 0 NF 25 50 75 100 125 0 –45 –3.0 –2.0 –1.0 0 +1.0 +2.0 TA – Ambient Temperature – °C VG2S – Gate 2 to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE 80 VDS = 5 V f = 1 kHz VG1S = 1 V 10 20 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE GPS |yfs| – Forward Transfer Admittance – mS NF – Noise Figure – dB 40 0.5 V GPS – Power Gain – dB 5 10 VG2S = 1 V ID = 10 mA f = 900 MHz 0 NF –0.5 V 0 –1.8 –1.2 –0.6 0 +0.6 +1.2 0 0 5 VDS – Drain to Source Voltage – V 10 VG1S – Gate 1 to Source Voltage – V INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 2.0 VDS = 5 V f = 1 MHz 10 VG2S = 1 V at ID = 10 mA 25 POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT VDS = 5 V VG2S = 1 V f = 900 MHz GPS Ciss – Input Capacitance – pF NF – Noise Figure – dB VG2S = 1 V at ID = 5 mA 1.0 5 GPS – Power Gain – dB 20 15 10 5 0 1.0 NF 0 VG2S – Gate 2 to Source Voltage – V +1.0 0 0 5 ID – Drain Current – mA 10 2 3SK206 DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE 100 VDS = 5 V |yfs| – Forward Transfer Admittance – mS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 80 VDS = 5 V f = 1 kHz VG2S = 1 V VG2S = 1 V ID – Drain Current – mA 0.5 V 50 0 40 0.5 V –0.5 V 0 –1.0 V 0 –1.8 –0.5 V –1.2 –0.6 0 +0.6 +1.2 0 50 ID – Drain Current – mA 100 VG1S – Gate 1 to Source Voltage – V S-PARAMETER (VDS = 5 V, VG2S = 1 V, ID = 10 mA) FREQUENCY (MHz) 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 MAG 1.003 0.984 0.985 0.964 0.928 0.928 0.869 0.889 0.832 0.847 0.795 0.833 S11 ANG –4.9 –11.9 –14.9 –21.8 –24.6 –31.9 –33.5 –39.8 –42.9 –47.1 –49.8 –51.4 MAG 3.938 4.009 3.859 3.766 3.699 3.886 3.612 3.643 3.553 3.817 3.681 3.747 S21 ANG 175.0 164.1 158.5 151.3 149.1 138.8 132.3 126.1 121.5 115.2 106.1 100.4 MAG 0.004 0.001 0.006 0.005 0.005 0.008 0.003 0.004 0.004 0.003 0.010 0.021 S12 ANG 41.9 –173.5 71.7 93.9 74.5 84.2 65.8 98.0 102.4 –173.4 –155.7 –147.3 MAG 0.963 0.958 0.972 0.972 0.965 0.983 0.961 0.995 0.981 1.039 0.999 1.107 S22 ANG –1.5 –4.2 –4.8 –8.2 –8.6 –13.1 –12.1 –16.2 –17.0 –20.8 –22.3 –25.1 3 3SK206 900 MHz GPS AND NF TEST CIRCUIT VG2S (1 V) 1 000 pF 47 kΩ 1 000 pF to 10 pF to 10 pF INPUT 50 Ω to 10 pF to 10 pF L2 L1 47 kΩ OUTPUT 50 Ω RFC 1 000 pF 1 000 pF L1, L2: 35 × 5 × 0.2 mm VDD (5 V) VG1S VDS = 5 V, VG2S = 1 V, ID = 10 mA 4 3SK206 [MEMO] 5 3SK206 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2