3SK252

DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use • Driving Battery 0.4 + 0.1 – 0.05 : (VDS = 3.5 V) NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) GPS = 19.0 dB TYP. (f = 470 MHz) PACKAGE DIMENSIONS (Unit: mm) 2.8 + 0.2 – 0.3 1.5 + 0.2 – 0.1 2 3 0.4 + 0.1 – 0.05 4 5˚ 0.4 + 0.1 – 0.05 5˚ • Low Noise Figure : • High Power Gain : • Suitable for use as RF amplifier in CATV tuner. 2.9 ± 0.2 (1.8) 0.95 • Automatically Mounting : • Package : Embossed Type Taping 4 Pins Mini Mold ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate1 to Source Voltage Gate2 to Source Voltage Gate1 to Drain Voltage Gate2 to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature *1: RL ≥ 10 kΩ *2: Free air VDSX VG1S VG2S VG1D VG2D ID PD Tch Tstg 18 ± 8*1 ± 8*1 18 18 25 200*2 125 –55 to +125 V V V V V mA mW °C °C 0.85 0.6 + 0.1 – 0.05 1 5˚ 1.1 + 0.2 – 0.1 0.8 5˚ PIN CONNECTIONS 1. 2. 3. 4. Source Drain Gate2 Gate1 PRECAUTION: Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage or fields. Document No. P10582EJ2V0DS00 (2nd edition) (Previous No. TD-2373) Date Published August 1995 P Printed in Japan 0~0.1 © 0.16 + 0.1 – 0.05 (1.9) 1993 3SK252 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTIC Drain to Source Breakdown Voltage Drain Current Gate1 to Source Cutoff Voltage Gate2 to Source Cutoff Voltage Gate1 Reverse Current Gate2 Reverse Current Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Power Gain Noise Figure 1 Noise Figure 2 SYMBOL BVDSX IDSX VG1S(off) VG2S(off) IG1SS IG2SS |yfs| Ciss Coss Crss Gps NF1 NF2 16 14 2.4 0.9 18 2.9 1.2 0.01 19 2.0 0.8 MIN. 18 0.1 –1.0 0 0 0.5 5.0 +1.0 1.0 ± 20 ± 20 23 3.4 1.5 0.03 22 3.0 2.3 TYP. MAX. UNIT V mA V V nA nA mS pF pF pF dB dB dB VDS = 3.5 V, VG2S = 3 V, ID = 7 mA f = 470 MHz VDS = 3.5 V, VG2S = 3 V, ID = 7 mA f = 55 MHz VDS = 3.5 V, VG2S = 3 V, ID = 7 mA f = 1 MHz TEST CONDITIONS VG1S = VG2S = –2 V, ID = 10 µA VDS = 3.5 V, VG2S = 3 V, VG1S = 0.75 V VDS = 3.5 V, VG2S = 3 V, ID = 10 µA VDS = 3.5 V, VG1S = 3 V, ID = 10 µA VDS = 0, VG2S = 0, VG1S = ±6 V VDS = 0, VG1S = 0, VG2S = ±6 V VDS = 3.5 V, VG2S = 3 V, ID = 7 mA f = 1 kHz IDSX Classification Rank Marking IDSX (mA) U1E/UAE* U1E 0.1 to 5.0 * Old Specification / New Specification 2 3SK252 TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 25 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VG2S = 3 V VG1S = 1.6 V 300 PD – Total Power Dissipation – mW ID – Drain Current – mA 20 1.4 V 15 1.2 V 1.0 V 0.8 V 5 0.6 V 200 10 100 0 25 50 75 100 125 0 5 VDS – Drain to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. GATE1 TO SOURCE VOLTAGE 10 TA – Ambient Temperature – °C DRAIN CURRENT vs. GATE1 TO SOURCE VOLTAGE VDS = 3.5 V VG2S = 3.5 V 3.0 V 2.5 V 2.0 V 15 |yfs| – Forward Transfer Admittance – mS 25 40 VDS = 3.5 V f = 1 kHz 32 VG2S = 3.5 V ID – Drain Current – mA 20 24 10 1.5 V 16 2.0 V 8 1.0 V 0 0.5 1.0 1.5 V 1.5 3.0 V 2.5 V 5 1.0 V 0.5 1.0 1.5 2.0 2.5 0 2.0 2.5 VG1S – Gate1 to Source Voltage – V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VG1S – Gate1 to Source Voltage – V INPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 5.0 ID = 7 mA (at VDS = 3.5 V, VG2S = 3 V) f = 1 MHz |yfs| – Forward Transfer Admittance – mS 40 Ciss – Input Capacitance – pF VDS = 3.5 V f = 1 kHz 32 VG2S = 3.5 V 3.0 V 16 2.5 V 4.0 24 3.0 2.0 8 1.0 V 0 4 1.5 V 8 12 2.0 V 16 20 1.0 0 –1.0 0 1.0 2.0 3.0 4.0 ID – Drain Current – mA VG2S – Gate2 to Source Voltage – V 3 3SK252 OUTPUT CAPACITANCE vs. GATE2 TO SOURCE VOLTAGE 2.5 10 ID = 7 mA (at VDS = 3.5 V, VG2S = 3.0 V) f = 1 MHz 20 ID = 7 mA (at VDS = 3.5 V, VG2S = 3.0 V) f = 470 MHz GPS POWER GAIN AND NOISE FIGURE vs. GATE2 TO SOURCE VOLTAGE Coss – Output Capacitance – pF NF – Noise Figure – dB GPS – Power Gain – dB 2.0 10 1.5 5 0 1.0 –10 NF –20 0.5 0 –1.0 0 1.0 2.0 3.0 4.0 0 –1.0 0 1.0 2.0 3.0 4.0 VG2S – Gate2 to Source Voltage – V VG2S – Gate2 to Source Voltage – V 4 3SK252 GPS AND NF TEST CIRCUIT AT f = 470 MHz VG2S 1 000 pF 22 kΩ 1 000 pF Ferrite Beads INPUT 40 pF 50 Ω 1 000 pF 22 kΩ L3 1 000 pF 1 000 pF L1 : φ 1.2 mm U.E.W φ 5 mm 1T L2 : φ1.2 mm U.E.W φ 5 mm 1T L3 : REC 2.2 µ H L1 15 pF 15 pF 1 000 pF L2 40 pF OUTPUT 50 Ω VG1S VDS NF TEST CIRCUIT AT f = 55 MHz VG2S VDS RFC 2.2 kΩ 1 500 pF 1 000 pF INPUT 50 Ω 27 pF 3.3 kΩ 47 kΩ 47 kΩ 1 000 pF 27 pF OUTPUT 3.3 kΩ 50 Ω Ferrite Beads 1 500 pF VG1S 5 3SK252 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2