AQ1F3P

DATA SHEET COMPOUND TRANSISTOR AQ1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING (UNIT: mm) FEATURES • High current drives such as IC and motor solenoid available up to 2 A • On-chip bias resistor • Low power consumption during drive AQ1 SERIES LISTS Products AQ1L2N AQ1A3M AQ1F3M AQ1F3P AQ1L2Q AQ1F2Q AQ1A4A R1 (KΩ) 0.47 1.0 2.2 2.2 0.47 0.22 − R2 (KΩ) 1.0 1.0 2.2 10 4.7 2.2 10 Electrode Connection 1. Emitter EIAJ : SC-43B 2. Collector JEDEC: TO-92 3. Base IEC : PA33 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT Tj Tstg Ratings −20 −20 −10 −2.0 −3.0 −0.04 750 150 −55 to +150 Unit V V V A A A mW °C °C * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10840EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 AQ1 SERIES $4/1 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VCE(sat) ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. 100 50 150 50 −0.55 −0.3 329 0.7 470 1.0 611 1.3 Unit nA − − − V V Ω kΩ VCB = −20 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −2.0 A IC = −5.0 A, IC = −0.7 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤  $4$0 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 50 150 50 −0.4 −0.3 0.7 0.7 1.0 1.0 1.3 1.3 Unit nA − − − V V kΩ kΩ VCB = −20 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −2.0 A IC = −5.0 A, IC = −0.5 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤  $4)0 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. 100 80 150 50 −0.3 −0.3 1.54 1.54 2.2 2.2 2.86 2.86 Unit nA − − − V V kΩ kΩ VCB = −20 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −2.0 A IC = −5.0 A, IC = −0.3 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤   'DWD 6KHHW '(-9'6 AQ1 SERIES $4)3 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 200 150 50 −0.3 −0.3 1.54 7 2.2 10 2.86 13 Unit nA − − − V V kΩ kΩ VCB = −20 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −2.0 A IC = −5.0 A, IC = −0.3 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤  $4/4 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 150 150 50 −0.55 −0.3 329 3.29 470 4.7 611 6.11 Unit nA − − − V V Ω kΩ VCB = −20 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −2.0 A IC = −5.0 A, IC = −0.7 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤  $4)4 (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 80 150 50 −0.55 –0.3 154 1.54 220 2.2 286 2.86 Unit nA − − − V V Ω kΩ VCB = −20 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −2.0 A IC = −5.0 A, IC = −0.7 A VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤  'DWD 6KHHW '(-9'6  AQ1 SERIES $4$$ (/(&75,&$/ &+$5$&7(5,67,&6 7D Parameter Collector cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 °& Conditions MIN. TYP. MAX. −100 200 150 50 −0.35 − 7 − 10 −0.45 –0.3 − 13 Unit nA − − − V V Ω kΩ VCB = −20 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −2.0 A IC = −1.0 A, IC = −20 mA VCE = −5.0 V, IC = −100 µA 3: ≤  µV GXW\ F\FOH ≤   'DWD 6KHHW '(-9'6 AQ1 SERIES 7