AR1A3M

DATA SHEET COMPOUND TRANSISTOR AR1 SERIES on-chip resistor PNP silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING (UNIT: mm) FEATURES • High current drives such as IC output and actuator available • On-chip bias resistor • Low power consumption during drive AR1 SERIES LISTS Products AR1A3M AR1F3P AR1L3N AR1A4M AR1L2Q AR1F2Q AR1A4A R1 (KΩ) 1.0 2.2 4.7 10 0.47 0.22 − R2 (KΩ) 1.0 10 10 10 4.7 2.2 10 Electrode Connection 1. Emitter EIAJ : SC-43B 2. Collector JEDEC: TO-92 3. Base IEC : PA33 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT Tj Tstg Ratings −60 −60 −10 −1.0 −2.0 −0.02 750 150 −55 to +150 Unit V V V A A A mW °C °C * PW ≤ 10 ms, duty cycle ≤ 50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16172EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 AR1 SERIES AR1A3M ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.4 A VCE = −5.0 V, IC = −100 µA 0.7 0.7 1.0 1.0 50 100 50 −0.4 −0.3 1.3 1.3 MIN. TYP. MAX. −100 Unit nA − − − V V kΩ kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % AR1F3P ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.35 A VCE = −5.0 V, IC = −100 µA 1.54 7 2.2 10 150 100 50 −0.3 −0.3 2.86 13 MIN. TYP. MAX. −100 Unit nA − − − V V kΩ kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % AR1L3N ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.2 A VCE = −5.0 V, IC = −100 µA 3.29 7 4.7 10 150 100 50 −0.3 −0.3 6.11 13 MIN. TYP. MAX. −100 Unit nA − − − V V kΩ kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % 2 Data Sheet D16172EJ1V0DS AR1 SERIES AR1A4M ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.1 A VCE = −5.0 V, IC = −100 µA 7 7 10 10 150 100 50 −0.2 −0.3 13 13 MIN. TYP. MAX. −100 Unit nA − − − V V kΩ kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % AR1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.5 A VCE = −5.0 V, IC = −100 µA 329 3.29 470 4.7 150 100 50 −0.55 −0.3 611 6.11 MIN. TYP. MAX. −100 Unit nA − − − V V Ω kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % AR1F2Q ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A VIN = −5.0 V, IC = −0.5 A VCE = −5.0 V, IC = −100 µA 154 1.54 220 2.2 80 100 50 −0.55 −0.3 286 2.86 MIN. TYP. MAX. −100 Unit nA − − − V V Ω kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % Data Sheet D16172EJ1V0DS 3 AR1 SERIES AR1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VCE(sat) ** VIL ** R1 R2 Conditions VCB = −60 V, IE = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −0.5 A VCE = −2.0 V, IC = −1.0 A IC = −500 mA, IB = −10 mA VCE = −5.0 V, IC = −100 µA − 7 − 10 150 100 50 −0.20 −0.35 −0.3 − 13 MIN. TYP. MAX. −100 Unit nA − − − V V Ω kΩ ** PW ≤ 350 µs, duty cycle ≤ 2 % 4 Data Sheet D16172EJ1V0DS AR1 SERIES TYPICAL CHARACTERISTICS (Ta = 25°C) Data Sheet D16172EJ1V0DS 5 AR1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. 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