BA1A4Z

DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * PT Tj Tstg Ratings 60 50 5 100 200 250 150 −55 to +150 Unit V V V mA mA mW °C °C Electrode Connection 1. Emitte 2. Collector 3. Base * PW ≤ 10 ms, duty cycle ≤ 50 % ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain Collector saturation voltage High level input voltage Low level input voltage Input resistance Turn-on time Storage time Turn-off time Symbol ICBO hFE1 ** hFE2 ** VCE(sat) ** VIL ** VIH ** R1 ton tstg toff VCC = 5.0 V, RL = 1.0 kΩ VI = 5.0 V, PW = 2.0 µs duty cycle≤2 % Conditions VCB = 50 V, IE = 0 VCE = 5.0 V, IC = 5.0 mA VCE = 5.0 V, IC = 50 mA IC = 5.0 mA, IB = 0.25 mA VCE = 0.2 V, IC = 5.0 mA VCE = 5.0 V, IC = 100 µA 0.7 2.0 135 100 340 300 0.04 0.8 0.55 10 0.5 13.0 0.2 5.0 6.0 0.2 MIN. TYP. MAX. 100 600 Unit nA − − V V V kΩ µs µs µs ** Pulse test PW ≤ 350 µs, duty cycle ≤ 2 % hFE CLASSIFICATION Marking hFE1 Q 135 to 270 P 200 to 400 K 300 to 600 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10841EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 BA1A4Z TYPICAL CHARACTERISTICS (Ta = 25°C) 2 Data Sheet DC10841EJ2V0DS BA1A4Z [MEMO] Data Sheet DC10841EJ2V0DS 3 BA1A4Z • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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