BB1J3P

DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is especially ideal for use in household electronic appliances and OA equipments such as VCRs and TVs. FEATURES • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive PACKAGE DRAWING (UNIT: mm) QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. Electrode Connection 1. Emitte (E) 2. Collector (C) 3. Base (B) BB1 SERIES LISTS Products BB1A4A BB1L2Q BB1A3M BB1F3P BB1J3P BB1L3N BB1A4M R1 (KΩ) − 0.47 1.0 2.2 3.3 4.7 10 R2 (KΩ) 10 4.7 1.0 10 10 10 10 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D11739EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 BB1 SERIES ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base volgate Colletor to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)Note 1 IB(DC) PT Tj Tstg Ratings 30 25 10 0.7 1.0 0.02 250 150 −55 to +150 Unit V V V A A A mW °C °C Note 1 PW ≤ 10 ms, duty cycle ≤ 50 % BB1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1Note 2 hFE2 Note 2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A IC = 0.5 A, IB = 5 mA VCE = 5.0 V, IC = 100 µA MIN. TYP. MAX. 100 Unit nA − − − 300 300 135 0.27 − 7 − 10 0.4 0.3 − 13 hFE3Note 2 V CE(sat) VIL Note 2 V V Ω kΩ Note 2 R1 R2 Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BB1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 Note 2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 100 µA MIN. TYP. MAX. 100 Unit nA − − − 150 300 135 400 700 600 0.2 0.3 0.3 hFE2Note 2 hFE3 VOL Note 2 Note 2 V V Ω kΩ VILNote 2 R1 R2 329 3.29 470 4.7 611 6.11 Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % 2 Data Sheet D11739EJ2V0DS BB1 SERIES BB1A3M ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1Note 2 hFE2 hFE3 Note 2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 100 µA MIN. TYP. MAX. 100 Unit nA − − − 80 100 135 0.3 0.4 0.3 0.7 0.7 1.0 1.0 1.3 1.3 Note 2 VOLNote 2 VILNote 2 R1 R2 V V kΩ kΩ Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BB1F3P ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 hFE2 Note 2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.3 A VCE = 5.0 V, IC = 100 µA MIN. TYP. MAX. 100 Unit nA − − − 300 300 135 0.3 0.3 1.54 7 2.2 10 2.86 13 Note 2 hFE3Note 2 VOL VIL Note 2 V V kΩ kΩ Note 2 R1 R2 Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BP1J3P ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 Note 2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 µA MIN. TYP. MAX. 100 Unit nA − − − 300 300 135 600 700 600 0.14 0.3 0.3 hFE2Note 2 hFE3 VOL Note 2 Note 2 V V kΩ kΩ VILNote 2 R1 R2 2.31 7 3.3 10 4.29 13 Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % Data Sheet D11739EJ2V0DS 3 BB1 SERIES BB1L3N ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1Note 2 hFE2 hFE3 Note 2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 µA MIN. TYP. MAX. 100 Unit nA − − − 300 300 135 0.3 0.3 3.29 7 4.7 10 6.11 13 Note 2 VOLNote 2 VILNote 2 R1 R2 V V kΩ kΩ Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % BB1A4M ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 hFE2 Note 2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 µA MIN. TYP. MAX. 100 Unit nA − − − 300 300 135 0.3 0.3 7 7 10 10 13 13 Note 2 hFE3Note 2 VOL VIL Note 2 V V kΩ kΩ Note 2 R1 R2 Note 2 PW ≤ 350 µs, duty cycle ≤ 2 % 4 Data Sheet D11739EJ2V0DS BB1 SERIES TYPICAL CHARACTERISTICS (Ta = 25°C) Data Sheet D11739EJ2V0DS 5 BB1 SERIES • The information in this document is current as of July, 2001. The information is subject to change without notice. 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