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GA4A4Z

GA4A4Z

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    GA4A4Z - RESISTOR BUILT-IN TYPE NPN TRANSISTOR - NEC

  • 数据手册
  • 价格&库存
GA4A4Z 数据手册
DATA SHEET SILICON TRANSISTOR GA4xxx RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES • Compact package • Resistors built-in type • Complementary to GN4xxx # PACKAGE DRAWING (Unit: mm) 0.3 +0.1 −0 Marking 0.15 +0.1 −0.05 3 1.25 ± 0.1 2.1 ± 0.1 ORDERING INFORMATION PART NUMBER GA4xxx PACKAGE SC-70 0 to 0.1 2 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IC(pulse) PT Tj Tstg 60 50 5 0.1 0.2 0.2 150 –55 to +150 V V V A A W °C °C 2 R1 0.65 0.3 +0.1 −0 0.65 0.3 0.9 ± 0.1 2.0 ± 0.2 # EQUIVALENT CIRCUIT 3 # PIN CONNECTION 1: Emitter 2: Base 3: Collector Note PW ≤ 10 ms, Duty Cycle ≤ 50% PART NUMBER GA4A4M GA4F4M GA4L4M GA4L3M GA4L3N GA4L3Z GA4A3Q GA4A4P GA4F4N MARK AA1 AB1 AC1 AD1 AE1 AF1 AG1 AH1 AJ1 R1 10.0 22.0 47.0 4.7 4.7 4.7 1.0 10.0 22.0 10.0 47.0 47.0 R2 10.0 22.0 47.0 4.7 10.0 UNIT kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ PART NUMBER GA4L4L GA4A4Z GA4F4Z GA4L4Z GA4F3M GA4F3P GA4F3R GA4A4L GA4L4K R2 1 MARK AK1 AL1 AM1 AN1 AP1 AQ1 AR1 AS1 AT1 R1 47.0 10.0 22.0 47.0 2.2 2.2 2.2 10.0 47.0 R2 22.0 UNIT kΩ kΩ kΩ kΩ 2.2 10.0 47.0 4.7 10.0 kΩ kΩ kΩ kΩ kΩ The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16494EJ2V0DS00 (2nd edition) Date Published February 2003 NS CP(K) Printed in Japan The mark # shows major revised points. 2002 GA4xxx ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Collector Cut-off Current DC Current Gain Collector Saturation Voltage Low-level Input Voltage High-level Input Voltage Input Resistor Emitter to Base Resistor SYMBOL ICBO hFE1 hFE2 VCE(sat) VIL VIH R1 R2 TEST CONDITIONS VCB = 50 V, IE = 0 VCE = 5.0 V, IC = 5.0 mA VCE = 5.0 V, IC = 50 mA IC = 5.0 mA, IB = 0.25 mA VCE = 5.0 V, IC = 100 µA VCE = 0.2 V, IC = 5.0 mA Note2 Note2 Note3 Note3 Note1 Note1 0.2 MIN. TYP. MAX. 100 UNIT nA V V V kΩ kΩ Note 1 PART NUMBER MIN. GA4A4M GA4F4M GA4L4M GA4L3M GA4L3N GA4L3Z GA4A3Q GA4A4P GA4F4N GA4L4L GA4A4Z GA4F4Z GA4L4Z GA4F3M GA4F3P GA4F3R GA4A4L GA4L4K 35 60 85 20 35 135 35 85 85 60 135 135 135 8 35 85 20 35 hFE1 TYP. MAX. 100 195 340 80 100 600 100 340 340 195 600 600 600 50 100 340 80 100 MIN. 80 90 95 80 80 100 80 95 95 90 100 100 100 50 80 95 80 80 hFE2 TYP. UNIT MAX. - Note 2 PART NUMBER MIN. GA4A4M GA4F4M GA4L4M GA4L3M GA4L3N GA4L3Z GA4A3Q GA4A4P GA4F4N GA4L4L GA4A4Z GA4F4Z GA4L4Z GA4F3M GA4F3P GA4F3R GA4A4L GA4L4K VIL TYP. MAX. 0.8 0.8 0.8 0.8 0.6 0.5 0.5 0.5 0.6 0.9 0.5 0.5 0.5 0.8 0.5 0.5 0.9 2.0 MIN. 3.0 4.0 5.0 3.0 3.0 1.2 2.0 3.0 3.0 6.0 2.0 3.0 4.0 3.0 2.0 2.0 6.0 8.0 VIH TYP. UNIT MAX. V V V V V V V V V V V V V V V V V V 2 Data Sheet D16494EJ2V0DS GA4xxx Note 3 PART NUMBER MIN. GA4A4M GA4F4M GA4L4M GA4L3M GA4L3N GA4L3Z GA4A3Q GA4A4P GA4F4N GA4L4L GA4A4Z GA4F4Z GA4L4Z GA4F3M GA4F3P GA4F3R GA4A4L GA4L4K 7.00 15.40 32.90 3.29 3.29 3.29 0.70 7.00 15.40 32.90 7.00 15.40 32.90 1.54 1.54 1.54 7.00 32.90 R1 TYP. 10.00 22.00 47.00 4.70 4.70 4.70 1.00 10.00 22.00 47.00 10.00 22.00 47.00 2.20 2.20 2.20 10.00 47.00 MAX. 13.00 28.60 61.10 6.11 6.11 6.11 1.30 13.00 28.60 61.10 13.00 28.60 61.10 2.86 2.86 2.86 13.00 61.10 MIN. 7.00 15.40 32.90 3.29 7.00 7.00 32.90 32.90 15.40 R2 TYP. 10.00 22.00 47.00 4.70 10.00 10.00 47.00 47.00 22.00 UNIT MAX. 13.00 28.60 61.10 6.11 13.00 13.00 61.10 61.10 28.60 kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ 1.54 7.00 32.90 3.29 7.00 2.20 10.00 47.00 4.70 10.00 2.86 13.00 61.10 6.11 13.00 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 PT - Total Power Dissipation - mW 200 150 100 50 0 0 50 100 150 200 TA - Ambient Temperature - °C Data Sheet D16494EJ2V0DS 3 GA4xxx [GA4A4M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 40 30 20 10 0 0 2 4 6 8 10 IB = 220 µ A 200 µ A 180 µ A 160 µ A 140 µA 120 µA 100 µA 80 µ A 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT V IN = 5 .0 V 15.0 V 10.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V IC = 10・IB TA = 75°C 25°C −25°C hFE - DC Current Gain 100 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V IC - Collector Current - µA VCE = 5.0 V TA = 75°C 25°C VIN - Input Voltage - V 10 100 1 TA = −25°C 25°C 75°C 1 10 100 10 −25°C 0.1 1 0.4 0.6 0.8 1 1.2 1.4 1.6 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 20 16 R - Resister - kΩ 12 8 4 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C 4 Data Sheet D16494EJ2V0DS GA4xxx [GA4F4M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 40 30 140 µA 20 90 µA 10 40 µ A 0 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 IB = 290 µ A 240 µA 190 µA VIN = 5.0 V 15.0 V 10.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1000 1 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 10・IB TA = 75°C 25°C −25°C VCE = 5.0 V hFE - DC Current Gain 100 0.1 TA = 75°C 25°C −25°C 10 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V IC - Collector Current - µA VIN - Input Voltage - V TA = 75°C 100 10 −25°C 25°C 1 TA = −25°C 25°C 75°C 1 10 100 10 0.1 1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 50 40 R - Resister - kΩ 30 20 10 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C Data Sheet D16494EJ2V0DS 5 GA4xxx [GA4L4M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - mA 50 40 30 20 10 20 µA 0 0 2 4 6 8 10 IB = 220 µ A 170 µA 120 µA 70 µA COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT VCE - Collector to Emitter Voltage - V 0.5 0.4 0.3 0.2 0.1 0 0 20 40 VIN = 5.0 V 10.0 V 15.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 10 VCE = 5.0 V hFE - DC Current Gain IC = 10・IB TA = 75°C 25°C −25°C 1 100 TA = 75°C 25°C −25°C 1 10 100 0.1 10 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V IC - Collector Current - µA VCE = 5.0 V TA = 75°C −25°C 25°C VIN - Input Voltage - V 10 100 1 TA = −25°C 25°C 75°C 1 10 100 10 0.1 1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 80 60 R - Resister - kΩ 40 20 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C 6 Data Sheet D16494EJ2V0DS GA4xxx [GA4L3M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 40 30 20 10 0 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 0.5 0.4 IB = 460 µ A 410 µA 360 µA 310 µA 260 µA 210 µA 160 µA VIN = 5.0 V 0.3 0.2 0.1 0 0 20 40 10.0 V 15.0 V 60 80 100 VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V IC = 10・IB hFE - DC Current Gain 100 TA = 75°C 25°C −25°C 0.1 10 TA = 75°C 25°C −25°C 1 10 100 1 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V VIN - Input Voltage - V 10 IC - Collector Current - µA TA = −25°C 25°C 75°C VCE = 5.0 V 100 TA = 75°C 10 25°C −25°C 1 0.1 1 10 100 1 0.6 0.8 1 1.2 1.4 1.6 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 10 8 R - Resister - kΩ 6 4 2 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C Data Sheet D16494EJ2V0DS 7 GA4xxx [GA4L3N] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 40 30 20 10 0 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 0.5 0.4 IB = 380 µ A 330 µA 280 µA 230 µA 180 µA 130 µA 80 µ A VIN = 5.0 V 0.3 0.2 0.1 0 0 20 40 10.0 V 15.0 V 60 80 100 VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1000 1 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 10・IB TA = 75°C 25°C −25°C VCE = 5.0 V hFE - DC Current Gain 100 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V VIN - Input Voltage - V 10 VCE = 5.0 V IC - Collector Current - µA 100 TA = −25°C 25°C 75°C TA = 75°C 25°C −25°C 1 10 0.1 1 10 100 1 0.4 0.6 0.8 1 1.2 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 20 16 R - Resister - kΩ 12 8 4 0 -25 0 25 50 75 100 R2 R1 TA - Ambient Temperature - °C 8 Data Sheet D16494EJ2V0DS GA4xxx [GA4L3Z] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 40 30 20 10 0 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 0.5 0.4 IB = 250 µA 200 µA 150 µA 100 µA 50 µ A VIN = 5.0 V 0.3 0.2 0.1 0 0 20 40 10.0 V 15.0 V 60 80 100 VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V hFE - DC Current Gain IC = 10・IB TA = 75°C 25°C −25°C 100 TA = 75°C 25°C −25°C 1 10 100 0.1 10 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V IC - Collector Current - µA VIN - Input Voltage - V 10 VCE = 5.0 V TA = 75°C TA = −25°C 25°C 75°C 100 1 10 25°C 1 0.2 0.4 0.6 −25°C 0.8 1 0.1 1 10 100 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 10 8 R - Resister - kΩ 6 4 2 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C Data Sheet D16494EJ2V0DS 9 GA4xxx [GA4A3Q] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 40 30 20 130 µA 10 0 0 2 80 µA 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 IB = 280 µA 230 µA 180 µA VIN = 5.0 V 10.0 V 15.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1000 1 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 10・IB TA = 75°C 25°C −25°C VCE = 5.0 V hFE - DC Current Gain 100 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V IC - Collector Current - µA VIN - Input Voltage - V 10 VCE = 5.0 V −25°C TA = 75°C TA = 75°C 25°C −25°C 100 1 10 25°C 1 0.2 0.4 0.6 0.8 1 1.2 0.1 1 10 100 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 12 10 R2 R - Resister - kΩ 8 6 4 2 0 -25 0 25 50 75 100 R1 TA - Ambient Temperature - °C 10 Data Sheet D16494EJ2V0DS GA4xxx [GA4A4P] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 40 30 20 10 0 0 2 4 6 8 IB = 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 60 µ A 40 µ A 20 µ A COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 VIN = 5.0 V 10.0 V 15.0 V 10 VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V IC = 10・IB TA = 75°C 25°C −25°C hFE - DC Current Gain 100 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V VIN - Input Voltage - V 10 VCE = 5.0 V IC - Collector Current - µA 100 TA = −25°C 25°C 75°C TA = 75°C −25°C 25°C 1 10 0.1 1 10 100 1 0.2 0.4 0.6 0.8 1 1.2 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 60 50 R - Resister - kΩ 40 30 20 10 0 -25 0 25 50 75 R2 R1 100 TA - Ambient Temperature - °C Data Sheet D16494EJ2V0DS 11 GA4xxx [GA4F4N] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 IB = 180 µ A COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 VIN = 5.0 V 10.0 V 40 30 20 10 0 0 2 4 6 160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 60 µ A 40 µ A 20 µ A 15.0 V 8 10 VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V hFE - DC Current Gain 100 IC = 10・IB TA = 75°C 25°C −25°C 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V VIN - Input Voltage - V 10 TA = 75°C 25°C −25°C IC - Collector Current - µA TA = 75°C 100 1 10 −25°C 25°C VCE = 5.0 V 1 1.2 1.4 1.6 0.1 1 10 100 1 0.4 0.6 0.8 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 60 50 R - Resister - kΩ 40 30 20 10 0 -25 0 25 50 75 R2 R1 100 TA - Ambient Temperature - °C 12 Data Sheet D16494EJ2V0DS GA4xxx [GA4L4L] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 IB = 200 µ A COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 0.5 10.0 V 0.4 0.3 0.2 40 30 20 10 0 0 2 4 6 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 60 µ A 40 µ A VIN = 5.0 V 15.0 V 0.1 0 0 20 40 8 10 VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V hFE - DC Current Gain 100 IC = 10・IB TA = 75°C 25°C −25°C 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V 10 VCE = 5.0 V TA = 75°C IC - Collector Current - µA VIN - Input Voltage - V 100 1 TA = −25°C 25°C 75°C 1 10 100 10 −25°C 25°C 0.1 1 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 60 R1 R - Resister - kΩ 40 20 R2 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C Data Sheet D16494EJ2V0DS 13 GA4xxx [GA4A4Z] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 40 30 20 10 0 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 IB = 200 µ A 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 60 µ A 40 µ A 20 µ A 10.0 V VIN = 5.0 V 15.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V hFE - DC Current Gain IC = 10・IB TA = 75°C 25°C −25°C 100 TA = 75°C 25°C −25°C 0.1 10 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V 10 VCE = 5.0 V TA = 75°C −25°C 25°C TA = −25°C 25°C 75°C IC - Collector Current - µA VIN - Input Voltage - V 100 1 10 0.1 1 10 100 1 0.2 0.4 0.6 0.8 1 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 20 16 R - Resister - kΩ 12 8 4 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C 14 Data Sheet D16494EJ2V0DS GA4xxx [GA4F4Z] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE VCE - Collector to Emitter Voltage - V IC - Collector Current - mA 50 40 30 20 10 0 0 2 4 6 8 10 COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 IB = 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 60 µ A 40 µ A 20 µ A VIN = 5.0 V 10.0 V 15.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1000 1 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 10・IB TA = 75°C 25°C −25°C VCE = 5.0 V hFE - DC Current Gain 100 TA = 75°C 25°C −25°C 1 10 100 0.1 10 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V TA = −25°C 25°C 75°C IC - Collector Current - µA VCE = 5.0 V TA = 75°C 25°C −25°C VIN - Input Voltage - V 10 100 1 10 0.1 1 10 100 1 0.2 0.4 0.6 0.8 1 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 40 30 R - Resister - kΩ 20 10 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C Data Sheet D16494EJ2V0DS 15 GA4xxx [GA4L4Z] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - mA 50 IB = 200 µ A COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT VCE - Collector to Emitter Voltage - V 0.5 0.4 0.3 0.2 0.1 0 0 20 40 40 30 20 10 0 0 2 4 6 8 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µA 60 µ A 40 µA 20 µA VIN = 5.0 V 10.0 V 15.0 V 10 VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V IC = 10・IB TA = 75°C 25°C −25°C hFE - DC Current Gain 100 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 IC - Collector Current - µA VIN - Input Voltage - V 10 TA = −25°C 25°C 75°C VCE = 5.0 V 100 1 10 TA = 75°C 25°C −25°C VCE = 0.2 V 0.1 1 10 100 1 0.2 0.4 0.6 0.8 1 1.2 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 100 80 R - Resister - kΩ 60 40 20 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C 16 Data Sheet D16494EJ2V0DS GA4xxx [GA4F3M] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - mA 50 IB = 400 µ A 40 30 20 10 0 0 2 4 100 µ A 6 8 10 300 µ A 200 µ A COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT VCE - Collector to Emitter Voltage - V 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 VIN = 5.0 V 10.0 V 15.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V hFE - DC Current Gain 100 IC = 10・IB TA = 75°C 25°C −25°C 0.1 TA = 75°C 25°C −25°C 10 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 IC - Collector Current - µA VIN - Input Voltage - V 10 VCE = 0.2 V TA = 75°C 25°C −25°C VCE = 5.0 V TA = 75°C 25°C −25°C 100 1 10 0.1 1 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 5 4 R - Resister - kΩ 3 2 1 0 -25 0 25 50 75 100 TA - Ambient Temperature - °C Data Sheet D16494EJ2V0DS 17 GA4xxx [GA4F3P] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - mA 50 40 30 20 10 0 0 2 4 6 8 10 IB = 250 µ A 200 µ A 150 µ A 100 µ A 50 µ A COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT VCE - Collector to Emitter Voltage - V 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 VIN = 5.0 V 10.0 V 15.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V hFE - DC Current Gain 100 IC = 10・IB TA = 75°C 25°C −25°C 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V TA = 75°C 25°C −25°C IC - Collector Current - µA VCE = 5.0 V TA = 75°C 25°C −25°C VIN - Input Voltage - V 10 100 1 10 0.1 1 10 100 1 0 0.2 0.4 0.6 0.8 1 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 14 12 R - Resister - kΩ 10 8 6 4 2 0 -25 0 25 50 75 R2 R1 100 TA - Ambient Temperature - °C 18 Data Sheet D16494EJ2V0DS GA4xxx [GA4F3R] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - mA 50 IB = 250 µ A 40 30 20 10 0 0 2 4 6 8 10 200 µ A 150 µ A 100 µ A 50 µ A COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT VCE - Collector to Emitter Voltage - V 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 VIN = 5.0 V 10.0 V 15.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V hFE - DC Current Gain 100 IC = 10・IB TA = 75°C 25°C −25°C 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V TA = 75°C 25°C −25°C IC - Collector Current - µA VCE = 5.0 V TA = 75°C 25°C −25°C VIN - Input Voltage - V 10 100 1 10 0.1 1 10 100 1 0 0.2 0.4 0.6 0.8 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 60 50 R - Resister - kΩ 40 30 20 10 0 -25 0 25 50 75 R2 R1 100 TA - Ambient Temperature - °C Data Sheet D16494EJ2V0DS 19 GA4xxx [GA4A4L] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - mA 50 40 30 20 10 0 0 2 4 6 8 10 IB = 300 µ A 250 µ A 200 µ A 150 µ A 100 µ A 50 µ A COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT VCE - Collector to Emitter Voltage - V 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 VIN = 5.0 V 10.0 V 15.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1000 1 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT IC = 10・IB TA = 75°C 25°C −25°C VCE = 5.0 V hFE - DC Current Gain 100 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V IC - Collector Current - µA VCE = 5.0 V TA = 75°C VIN - Input Voltage - V 10 100 1 0.1 1 TA = 75°C 25°C −25°C 10 100 10 25°C −25°C 1 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 14 12 R - Resister - kΩ 10 8 6 4 2 0 -25 0 25 50 R1 R2 75 100 TA - Ambient Temperature - °C 20 Data Sheet D16494EJ2V0DS GA4xxx [GA4L4K] TYPICAL CHARACTERISTICS (TA = 25°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE IC - Collector Current - mA 50 40 30 20 10 0 0 2 4 6 8 10 IB = 250 µA 200 µ A 150 µ A 100 µ A 50 µ A COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT VCE - Collector to Emitter Voltage - V 0.5 0.4 0.3 0.2 0.1 0 0 5 10 15 20 25 30 35 40 VIN = 5.0 V 10.0 V 15.0 V VCE - Collector to Emitter Voltage - V IC - Collector Current - mA DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V 1 VCE = 5.0 V hFE - DC Current Gain 100 IC = 10・IB TA = 75°C 25°C −25°C 10 TA = 75°C 25°C −25°C 0.1 1 1 10 100 0.01 1 10 100 IC - Collector Current - mA IC - Collector Current - mA INPUT VOLTAGE vs. COLLECTOR CURRENT 100 COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 0.2 V IC - Collector Current - µA VCE = 5.0 V 100 VIN - Input Voltage - V 10 TA = 75°C 1 TA = 75°C 25°C −25°C 10 25°C 1 1.8 2.2 2.6 3 3.4 −25°C 0.1 1 10 100 3.8 4.2 4.6 IC - Collector Current - mA VIN - Input Voltage - V RESISTER vs. AMBIENT TEMPERATURE 60 50 R - Resister - kΩ 40 30 20 10 0 -25 0 25 50 75 R1 R2 100 TA - Ambient Temperature - °C Data Sheet D16494EJ2V0DS 21 GA4xxx • The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1
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