NDL5531PD

DATA SHEET PHOTO DIODE NDL5531P Series 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ 30 µ m InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5531P Series is an InGaAs avalanche photo diode module with single mode fiber. It is designed for detectors of long wavelength transmission systems. The series covers the wavelength range between 1 000 and 1 600 nm. FEATURES • • • Small dark current Small terminal capacitance High quantum efficiency High speed response Detecting area size ID = 5 nA Ct = 0.35 pF @ 0.9 V(BR)R η = 90 % @ λ = 1 300 nm, M = 1 η = 77 % @ λ = 1 550 nm, M = 1 fC = 2.5 G H z @ M = 10 • • • φ 3 0 µm Coaxial module with single mode fiber (SM-9/125) PACKAGE DIMENSIONS in millimeters • NDL5531P2 Optical Fiber: SM-9/125 Length: 1 m MIN. NDL5531P Optical Fiber: SM-9/125 Length: 1 m MIN. Shrunk tube NDL5531P1 Optical Fiber: SM-9/125 Length: 1 m MIN. Shrunk tube Shrunk tube 30.0 MAX. φ 6.0 +0.0 –0.1 12.5 MIN. 4.0±0.1 6.9±0.3 6.9±0.3 12.5 MIN. 3.9±0.5 φ 6.0+0.0 –0.1 φ 6.0 +0.0 –0.1 φ 0.45 2–φ2.2 2.5±0.1 0.5±0.1 2–φ2.5 2 3 1 φ 2.0 12.5 MIN. 30.0 MAX. 12.0±0.1 16.0±0.2 φ 2.5 30.0 MAX. φ2.5 14.0±0.1 φ2.5 φ 2.0 φ 2.0 18.0±0.1 PIN CONNECTIONS 1 Anode (Negative) 2 Cathode (Positive) 3 Case 3 2 1 The information in this document is subject to change without notice. Document No. P11352EJ2V0DS00 (2nd edition) Date Published July 1996 P Printed in Japan The mark • shows major revised points. 4.0±0.3 2 1 3.0±0.3 7.0±0.3 1.5 6.0+0.0 –0.1 3 2 3 1 © 7.0±0.15 1996 NDL5531P Series • ORDERING INFORMATION Part Number NDL5531P NDL5531PC NDL5531PD NDL5531P1 NDL5531P1C NDL5531P1D NDL5531P2 NDL5531P2C NDL5531P2D Available Connector Without Connector With FC-PC Connector With SC-PC Connector Without Connector With FC-PC Connector With SC-PC Connector Without Connector With FC-PC Connector With SC-PC Connector Vertical Flange Flat Mount Flange Description No Flange ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified) Parameter Forward Current Reverse Current Operating Case Temperature Storage Temperature Symbol IF IR TC Tstg Ratings 10 0.5 −40 to +85 −40 to +85 Unit mA mA °C °C ELECTRO-OPTICAL CHARACTERISTICS (TC = 25 °C) Parameter Reverse Breakdown Voltage Temperature Coefficient of Reverse Breakdown Voltage Dark Current Multiplied Dark Current Terminal Capacitance Cut-off Frequency Quantum Efficiency Symbol V(BR)R δ *1 Conditions ID = 100 µ A MIN. 50 TYP. 70 0.2 MAX. 100 Unit V %/°C ID IDM Ct fC VR = V(BR)R × 0.9 M = 2 to 10 VR = V(BR)R × 0.9, f = 1 MHz M = 10 λ = 1 300 nm, M = 1 λ = 1 550 nm, M = 1 2.5 76 65 0.80 0.81 30 5 1 0.35 25 5 0.60 nA nA pF GHz η 90 77 0.94 0.96 40 % Responsivity S λ = 1 300 nm, M = 1 λ = 1 550 nm, M = 1 A/W Multiplication Factor M λ = 1 300 nm, Ipo = 1.0 µ A VR = V (@ ID = 1 µ A ) Excess Noise Factor *2 x F λ = 1 300 nm, 1 550 nm, Ipo = 1.0 µ A M = 10, f = 35 MHz, B = 1 MHz 0.7 5 *1 δ = V(BR)R < 25 °C + ∆T °C > −V(BR)R < 25 °C > ∆T °C ⋅ V(BR)R < 25 °C > X *2 F = M 2 NDL5531P Series TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified) Responsivity (Relative Value) ∆ S/S (%) • WAVELENGTH DEPENDENCE OF QUANTUM EFFICIENCY 100 Quantum Efficiency η (%) TEMPERATURE DEPENDENCE OF RESPONSIVITY 10 λ = 1 300 nm 80 60 40 20 0 0.9 0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 –10 –60 –40 Wavelength λ ( µ m) –20 20 0 40 60 80 100 Case Temperature TC (˚C) DARK CURRENT and PHOTO CURRENT vs. REVERSE VOLTAGE 10–3 λ = 1 300 nm Ipo = 1.0 µA Dark Current ID (A) DARK CURRENT vs. REVERSE VOLTAGE 10–6 10–7 TC = 85 ˚C TC = 65 ˚C 10 –4 10–8 10–5 Dark Current, Photo Current ID, lph (A) Iph 10–9 TC = 25 ˚C TC = –20 ˚C 10–10 10–6 0 20 40 60 80 Reverse Voltage VR (V) 100 10–7 103 Multiplication Factor M MULTIPLICATION FACTOR vs. REVERSE VOLTAGE 10–8 TC = 65 ˚C 102 TC = –20 ˚C 10–9 ID 101 TC = 25 ˚C TC = 85 ˚C 10–10 100 0 20 40 60 80 Reverse Voltage VR (V) 100 0 20 40 60 80 Reverse Voltage VR (V) 100 3 NDL5531P Series TEMPERATURE DEPENDENCE OF DARK CURRENT vs. MULTIPLIED DARK CURRENT 10–6 10–7 10–8 10–9 10–10 10–11 –60 –40 Terminal Capacitance Ct (pF) Dark Current, Multiplied Dark Current ID, IDM (A) TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 2 1 0.5 λ = 1 300 nm ID @ VR = 0.9 V(BR)R IDM 0.2 0.1 –20 0 20 40 60 Case Temperature TC (˚C) 80 100 1 2 5 10 20 Reverse Voltage VR (V) 50 100 CUT-OFF FREQUENCY vs. MULTIPLICATION FACTOR 100 Cut-off Frequency fC (GHz) FREQUENCY RESPONSE 9 6 Response (dB) λ = 1 300 nm G × B = 50 GHz λ = 1 300 nm RL = 50 Ω M = 10 10 3 0 –3 –6 –9 1 0.1 1 10 Multiplication Factor M 100 0 1.0 2.0 3.0 4.0 Frequency f (GHz) 5.0 EXCESS NOISE FACTOR vs. MULTIPLICATION FACTOR 100 Excess Noise Factor F 50 20 10 5 2 1 1 1 300 nm ( ), 1 550 nm ( ) f = 35 MHz, B = 1 MHz 0.5 0.4 2 5 10 20 Multiplication Factor M 50 100 4 NDL5531P Series HANDLING PRECAUTION for PD/APD MODULE The NEC PD/APD module has heat shrink tubing to protect the ferrule edge (*1) and the junction between the ferrule and the module body (*2). In order to avoid breaking the fiber and/or optical coupling degradation, NEC recommends the following handling precautions. 1. Do not make the fiber bend radius less than 30 mm (*3). 2. Do not bend the fiber within the 18 mm section from the module body (*4). 3. Do not stress the ferrule with a lateral force exceeding 500 g (*5). 30 fiber m m m in (*3 ) (*1) 18 mm min. (*4) ferrule (*5) (*2) module body 5 NDL5531P Series • InGaAs APD/PD FAMILY Features APD PIN-PD φ 30 µm Packages TO-18 type Can TO-18 type Can with Micro Lens Small Can NDL5531 (for 2.5 Gb/s) NDL5530  φ 50 µm (for 2.5 Gb/s)   φ 50 µm φ 80 µm φ 50 µm (for 2.5 Gb/s) φ 80 µm Remarks NDL5500  NDL5510   NDL5490L *3, 4  NDL5405L 3 pins 3 pins    NDL5490 *3, 4  φ 5.6 µm Chip on Carrier Receptacle Module NDL5530C  NDL5520C  NDL5500C  NDL5510C     NDL5471RC NDL5471RD 3 pins RC: FC receptacle RD: SC receptacle Coaxial Module with MMF  NDL5521P NDL5521P1 NDL5521P2 NDL5551P NDL5551P1 NDL5551P2 NDL5553P *1 *1 *1 NDL5561P *2 *2 *2 NDL5421P NDL5421P1 NDL5421P2 NDL5461P NDL5461P1 NDL5461P2 P1, P2: With flange NDL5590P Series: With Pre-AMP NDL5561P1 NDL5561P2 NDL5553P1 NDL5553P2 NDL5590P NDL5590P1 NDL5590P2 Coaxial Module with SMF NDL5531P NDL5531P1 NDL5531P2  NDL5553PS 1 *1 *   NDL5481P *5 *5 *5 NDL5553P1S NDL5481P1 NDL5481P2 NDL5553P2S 1 * 14-pin DIP Module with TEC 6-pin BFY Module with MMF   NDL5506P NDL5506PS    ∆T = 45 K (@ IC = 1.1 A) PS: With SMF  NDL5522P   NDL5422P  With Pre-AMP *1 For OTDR *2 With GI-62.5/125 *3 Under development *4 Internal pre-amplifier for 1 Gb/s *5 For analog application (optical CATV) Remark Modules are available with FC-PC connector or optional SC-PC connector. 6 NDL5531P Series REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grades on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. LEI-1201 IEI-1209 C10535E MEI-1202 X10679E 7 NDL5531P Series CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94. 11