NDL7673PC

DATA SHEET LASER DIODE NDL7673P 1310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP STRAINED MQW-DFB LASER DIODE MODULE DESCRIPTION NDL7673P is a 1310 nm DFB (Distributed Feed-Back) laser diode, that has a newly developed Strained Multiple Quantum Well (MQW) structure, butterfly package module with optical isolator. It is especially designed for a 16 mW light source of CATV analog applications. FEATURES • Low noise • Low distortion • High output power • Long wavelength • High isolation • Internal InGaAs monitor PD • Internal thermoelectric cooler • Hermetically sealed 14 pin butterfly Package • Singlemode fiber pigtail • Wide operating temperature range 11.0 ±0.2 2.03 5.6 PACKAGE DIMENSIONS RIN = ð155 dB/Hz Max. CSO = ð55 dBc Max. CTB = ð60 dBc Max. Pf = 16.0 mW OP = 1310 nm 40 dB 8.89 ±0.13 10 MIN. 2.54 0.51 7 1 in millimeters 15.24 4 – φ 2.67 15.0 8 20.83 ±0.13 26.04 ±0.13 14 Optical Fiber SM-9/125, Length = 2 m • High reliability ORDERING INFORMATION Part Number NDL7673P NDL7673PC NDL7673PD Available Connector Without Connector With FC-UPC Connector With SC-UPC Connector 29.97 ±0.13 PIN CONNECTIONS PIN No. 1 2 3 4 5 6 7 FUNCTION COOLER ANODE THERMISTOR PD ANODE PD CATHODE CASE GROUND NC NC PIN No. 8 9 10 11 12 13 14 FUNCTION NC NC CASE GROUND LD CATHODE NC LD ANODE, CASE GROUND COOLER CATHODE TOP VIEW #7 PD LD #8 #1 T he information in this document is subject to change without notice. Document No. P10478EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan THERMISTOR Cooler + – #14 © 7.0 12.7 ±0.13 0.9 6.0 1996 NDL7673P ABSOLUTE MAXIMUM RATINGS (TC = 25 qC) Parameter Operating Case Temperature Storage Temperature Lead Soldering Temperature (10 s) Optical Output Power Forward Current of LD Reverse Voltage of LD Forward Current of PD Reverse Voltage of PD Cooler Current Cooler Voltage Symbol TC Tstg Tsld Pf IF VR IF VR IC VC Ratings ð20 to +65 ð40 to +70 260 25 150 2.0 10 20 1.0 2.0 Unit qC qC qC mW mA V mA V A V ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25 qC, TC = ð20 qC to +65 qC) Parameter Threshold Current Forward Voltage Optical Output Power from Fiber (Recommended Operating Point) Spontaneous Emission Power from Fiber Differential Efficiency from Fiber Peak Emission Wavelength Sub-mode Suppression Ratio 1 dB Bandwidth Relative Intensity Noise Composite Second Order Distortion Composite Triple Beat Distortion Carrier to Noise Ratio Isolation Symbol Ith VF Pop *1 Conditions MIN. TYP. 20 MAX. 35 1.4 Unit mA V mW IF = 30 mA 0.9 15.0 1.2 16.0 Ps Ib = Ith Pf d Pop Pf = Pop Pf = Pop Pf = Pop *2 50 0.25 1290 30 900 ð155 ð55 ð60 49 35 40 1310 35 1330 PW mW/mA nm dB MHz dB/Hz dBc dBc dBc dB Kd OP SMSR f RIN Pf = Pop Pf = Pop Pf = Pop Pf = Pop CSO CTB *3 *3 CNR IS *3 *1 Recommended Pop value is supplied with each device. *2 Conditions : Pf = Pop, CW Measuring Bandwidth: 50 MHz to 600 MHz Optical Reflection ð40 dB *3 Conditions : Pf = Pop, Optical Modulation Index = 3.5 %/channel 79 channel unmodulated carriers (55.25 MHz to 547.25 MHz) Optical Reflection ð40 dB, Optical Loss = 12 dB 2 NDL7673P ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Monitor PD: TLD = 25 qC, TC = ð20 qC to +65 qC) Parameter Monitor Current Dark Current Tracking Error Symbol Im ID Conditions VR = 5 V, Pf = Pop VR = 5 V Im = const. MIN. 50 2 10 0.5 TYP. MAX. Unit PA nA dB J *4 *4 Tracking Error : J J = 10 log Pf Pop (mW) Pf TLD = TC = 25 ˚C TLD = 25 ˚C, TC = –20 to +65 ˚C Pop Pf 0 Im (@ Pf(25 ˚C) = Pop) Im ELECTRO-OPTICAL CHARACTERISTICS (Applicable to Thermistor and TE Cooler: TLD = 25 qC, TC = ð20 qC to +65 qC) Parameter Thermistor Resistance Cooler Current Cooler Voltage Cooling Capacity Symbol R *5 Conditions TLD = 25 qC MIN. 9.5 TYP. 10 0.6 1.1 MAX. 10.5 0.8 1.5 Unit k: A V K IC VC 'T = 40 K 'T = 40 K IC = 0.8 A, Pf = Pop 40 'T *6 *5 B Constant = 3400 r100 K *6 'T = |TC - TLD| DFB LASER FAMILY FOR CATV/ANALOG APPLICATIONS Pop: Operating point power (min. value) FEATURES 3 mW min. 14 PIN BFY MODULE WITH SMF NDL7680P 4 mW min. NDL7650P 6 mW min. NDL7660P 8 mW min. NDL7670P 12 mW min. NDL7672P 15 mW min. NDL7673P 3 NDL7673P REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. LEI-1201 IEI-1209 C10535E MEI-1202 X10679E 4 NDL7673P [MEMO] 5 NDL7673P CAUTION Within this module there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEC Corporation DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER NEC Building, 7-1, Shiba 5-chome, Minato-ku, Tokyo 108-01, Japan Type number: Manufactured: Serial Number: This product conforms to FDA regulations as applicable to standards 21 CFR Chapter 1. Subchapter J. AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture The export of this product from Japan is prohibited without governmental license. To export or re-export this product from a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales representative. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94. 11