NE24200

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz • Gate Length : Lg = 0.25 µm • Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32400 NE24200 Standard (Grade D) Grade C and B (B is special order) QUALITY GRADE APPLICATIONS Commercial Industrial, space ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot* Tch Tstg 4.0 –3.0 IDSS 200 175 –65 to +175 V V mA mW ˚ C ˚ C * Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t) ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Thermal Resistance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm Rth* NF Ga MIN. – 15 –0.2 45 – – 10.0 TYP. 0.5 40 –0.8 60 – 0.6 11.0 MAX. 10 70 –2.0 – 260 0.7 – UNIT TEST CONDITIONS VGS = –3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 µA VDS = 2 V, ID = 10 mA channel to case VDS = 2 V, ID = 10 mA, f = 12 GHz µA mA V mS ˚C/W dB dB RF performance is determined by packaging and testing 10 chips per wafer. Wafer rejection criteria for standard devices is 2 rejects per 10 samples. Document No. P11345EJ2V0DS00 (2nd edition) (Previous No. TD-2358) Date Published May 1996 P Printed in Japan © 1996 NE32400, NE24200 CHIP DIMENSIONS (Unit: µm) 400 56 112 61 53 Drain Drain 96 45 41 113 47 40 Thickness = 140 µm : BONDING AREA TYPICAL CHARACTERISTICS (TA = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 50 VGS = 0 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Ptot – Total Power Dissipation – mW 200 60 Source Source 150 Gate Gate 350 ID – Drain Current – mA 40 –0.2 V 30 –0.4 V 150 100 20 50 10 –0.6 V 0 50 100 150 200 250 0 1 2 3 4 5 TA – Ambient Temperature – ˚C VDS – Drain to Source Voltage – V 2 NE32400, NE24200 DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 VDS = 2 V 40 24 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2.0 V ID = 10 mA MSG. – Maximum Stable Gain – dB |S21s|2 – Foward Insertion Gain – dB 20 MSG. 16 |S21s|2 12 ID – Drain Current – mA 30 20 10 8 0 –2.0 –1.0 VGS – Gate to Source Voltage – V 0 4 1 2 4 6 8 10 20 30 40 f – Frequency – GHz Gain Calculations MSG. = | S 21 | | S12 | | S 21 | (K ± K 2 − 1) | S12 | K= 1 + | ∆ |2 − | S11 |2 − | S 22 |2 2 | S12 || S 21 | MAG. = ∆ = S11 ⋅ S 22 − S 21 ⋅ S12 5 NOISE FIGURE ASSOCIATED vs. FREQUENCY VDS = 2 V ID = 10 mA 24 3 NOISE FIGURE, ASSOCIATED GAIN vs. RATIO OF DRAIN CURRENT TO ZERO-GATE VOLTAGE CURRENT VDS = 2 V f = 12 GHz 4 Ga 3 20 15 Ga – Associated Gain – dB NF – Noise Figure – dB 2 Ga 10 15 2 12 1 NF 5 0 0 100 1 NF 0 8 1 2 4 6 8 10 14 20 30 4 1 2 4 68 20 40 60 IDS/IDSS – Ratio of Drain Current to Zero-Gate Voltage Current – % f – Frenquency – GHz Ga – Associated Gain – dB NF – Noise Figure – dB 3 0.1 0.2 0.3 30 07 43 0. 0 13 –1 CE AN CT JX– EA – ––O R –Z ) 0.2 ( 0 .08 0. 5 26 GHz 0.4 0.0 2 8 0 00 .43 0. 07 NE G 0. 5 E IV AT ( 0.4 T EN POS 14 ITIV 0 ER EA CT +A –– JX NCE ZO–– CO M PO N ) 2 0 0.3 0. 0. 4 –1 2 0 0.4 1 0.0 9 –11 0.40 0.10 0.38 0.39 0.12 0.11 –100 –90 0.2 0.2 0.4 0.13 0.37 0.37 0.13 0.6 1.2 1.4 1.6 1.8 2.0 0.4 0.6 0. 8 0. 8 0 S11 0.8 –80 1. 0.36 0.04 –70 0.35 0.15 0 4 0.3 6 0.1 –6 0.1 3 0.3 7 32 0. 18 0 –5 0. 0 3. 4.0 6.0 10 20 50 NE32400, NE24200 0 0.2 0 50 20 0.3 1 GHz 20 10 19 0. 31 0. 40 1 0.2 9 0.2 30 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 0.25 0.25 0 0.26 0.24 –10 0.27 0.23 –20 0.2 8 0.2 2 0.2 9 0 00 .21 0.3 0 –3 0 0 .20 –4 0 0. 0. 31 19 4 0 0.01 0.49 0.48 0 0.49 0.01 .02 RD LOAD 0 WA LECTION COEF 0 S-PARAMETERS WAVELE NGTH S 0.02 TOWARD 0.0 GENE 0.48 3 RA FCIENT 0.4 0.0TOR IN DE 7 4 GRE 0.4 ES 0.1 VDS = 2 V, ID = 10 mA 0.2 6 15 0 0.0 0 .4 5 5 7 0.4 REF 3 TO 6 0.0 THS ANGLE OF 0.4 NG 60 E 04 VEL –1 0. WA 5 0.4 5 50 –1 0.0 44 0. 06 40 ENT ON MP 0. –1 CO 0.1 0.3 0. 0. 06 44 0. 4 1 0 20 0.6 .09 0.4 0.7 0.6 0.4 1 0.7 START 1 GHz, STOP 26 GHz, STEP 1 GHz 0.10 0.40 110 0.5 0.6 0.8 0.8 0.11 0.39 100 0.7 0.8 0.9 0.9 26 GHz 0.9 0.12 0.38 (ZR ( O RESTSTANCE COMPONENT 1.0 90 1.0 0.2 0.4 1.0 0.2 0.4 0.6 0.6 0.2 1.2 0.8 1. 0 0.14 0.36 80 1. 0 1. 0 1.4 1.4 0.15 0.35 70 S22 1.6 1.6 0.1 6 0.3 4 1 GHz 1.8 3.0 4.0 5.0 2.0 1.8 6 00 0.1 0.3 7 3 2.0 50 0. 0. 18 32 3. 0 10 4.0 5.0 50 NE32400, NE24200 S-PARAMETERS MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY MAG. (MHz) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 21000 22000 23000 24000 25000 26000 0.996 0.994 0.979 0.963 0.929 0.904 0.882 0.851 0.836 0.809 0.792 0.774 0.762 0.745 0.729 0.717 0.697 0.685 0.665 0.647 0.625 0.612 0.596 0.592 0.587 0.584 S11 ANG. (deg.) –12 –23 –34 –44 –54 –62 –70 –81 –89 –97 –105 –112 –119 –124 –128 –133 –137 –141 –146 –150 –156 –160 –166 –170 –174 –178 4.680 4.603 4.486 4.314 4.118 3.872 3.759 3.632 3.423 3.290 3.179 3.059 2.940 2.807 2.698 2.616 2.526 2.421 2.315 2.220 2.159 2.046 1.892 1.866 1.780 1.751 S21 MAG. ANG. (deg.) 171 161 152 143 135 127 120 111 104 97 91 84 78 73 68 63 58 54 49 45 40 34 30 27 25 21 0.015 0.032 0.046 0.059 0.071 0.076 0.092 0.097 0.098 0.102 0.107 0.112 0.118 0.121 0.124 0.129 0.134 0.137 0.135 0.136 0.138 0.138 0.139 0.140 0.141 0.141 S12 MAG. ANG. (deg.) 83 76 70 65 59 55 51 45 40 40 37 35 31 28 26 24 21 19 19 18 18 17 17 16 21 22 0.616 0.613 0.601 0.592 0.580 0.578 0.574 0.557 0.543 0.529 0.523 0.511 0.489 0.479 0.468 0.464 0.462 0.460 0.460 0.460 0.459 0.457 0.455 0.455 0.454 0.453 MAG. S22 ANG. (deg.) –10 –16 –23 –30 –36 –40 –46 –52 –55 –59 –62 –67 –72 –77 –81 –85 –90 –94 –96 –98 –100 –102 –103 –105 –107 –108 0.05 0.07 0.08 0.10 0.18 0.28 0.30 0.35 0.40 0.42 0.44 0.45 0.46 0.49 0.51 0.54 0.58 0.63 0.68 0.70 0.71 0.72 0.73 0.74 0.74 0.75 (dB) 24.9 21.6 19.9 18.6 17.7 17.1 16.1 15.7 15.5 15.1 14.7 14.4 14.0 13.6 13.4 13.1 12.8 12.5 12.3 12.1 11.9 11.7 11.5 11.3 11.2 11.0 K MSG/MAG 5 NE32400, NE24200 CHIP HANDLING DIE ATTACHMENT Die attach operation can be accomplished with Au-Sn (within a 300 ˚C – 10 s) performs in a forming gas environment. Epoxy die attach is not recommend. BONDING Bonding wires should be minimum length, semi hard gold wire (3-8 % elongation) 20 microns in diameter. Bonding should be performed with a wedge tip that has a taper of approximately 15 %. Bonding time should be kept to minimum. As a general rule, the bonding operation should be kept within a 280 ˚C, 2 minutes for all bonding wires. If longer periods are required, the temperature should be lowered. PRECAUTIONS The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. CAUTION The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the Japanese law concerned and so on, especially in case of removal. 6 NE32400, NE24200 [MEMO] 7 NE32400, NE24200 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2