NE32400_98

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz • HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz • LG = 0.25 µm, WG = 200 µm Noise Figure, NF (dB) 3 GA NE32400 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 2 18 DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate results in lower noise figure and high associated gain for consumer and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 1.5 15 1 12 0.5 NF 9 0 1 10 20 30 6 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Saturated Drain Current at VDS = 2 V, VGS = 0 V Pinch-Off Voltage at VDS = 2 V, IDS = 100 µA Transconductance at VDS = 2 V, IDS = 10 mA Gate to Source Leakage Current at VGS = -3 V Thermal Resistance (Channel-to-Case) UNITS dB dB dB dB dBm dBm dB dB mA V mS µA °C/W 15 -2.0 45 MIN NE32400 00 (CHIP) TYP 0.35 0.6 16.0 11.0 9.5 11.0 11.8 12.8 40 -0.8 60 0.5 10 260 70 -0.2 MAX 0.7 GA1 10.0 P1dB G1dB IDSS VP gm IGSO RTH (CH-C)2 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink. California Eastern Laboratories Associated Gain, GA (dB) 2.5 21 NE32400 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGSO IDS IGRF TCH TSTG PT2 PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA µA °C °C mW RATINGS 4.0 -3.0 IDSS 200 175 -65 to +175 200 TYPICAL NOISE PARAMETERS1,2 (TA = 25°C) VDS = 2 V, IDS = 10 mA FREQ. (GHz) 1 2 4 6 8 10 12 14 16 18 NFOPT (dB) 0.30 0.31 0.35 0.38 0.43 0.50 0.60 0.71 0.85 1.0 1.2 1.5 1.8 2.1 2.4 2.8 GA (dB) 22.0 19.0 16.0 14.2 12.9 12.0 11.0 10.6 10.0 9.5 9.0 8.6 8.3 7.9 7.6 7.3 MAG 0.81 0.79 0.75 0.72 0.70 0.68 0.66 0.64 0.62 0.58 0.55 0.52 0.49 0.48 0.46 0.46 ΓOPT ANG 10 17 31 45 59 77 92 108 126 140 153 164 175 -176 -168 -160 Rn/50 0.39 0.36 0.33 0.30 0.27 0.24 0.22 0.19 0.18 0.15 0.13 0.11 0.10 0.08 0.07 0.05 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With chip mounted on an alumina heat sink (size: 3 x 3 x 0.6 mm thick) TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 20 22 24 26 28 30 Power Dissipation, PT (mW) 200 Infinite Heat sink 150 100 50 Notes: 1. Noise Parameters include Bond Wires. Gate: Total 2 wires, 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wires, 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wires, 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. 2. Data at 28 and 30 GHz is extrapolated, not measured. 0 0 25 50 75 100 125 150 175 200 Ambient Temperature, TA (°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 VGS 0.0 V NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz 1.4 14 1.2 40 13 1 NF 0.8 GA 0.6 0.4 12 -0.15 V 30 11 10 9 20 -0.30 V 10 -0.45 V 0.2 -0.60 V 0 0 1 2 3 8 7 0 5 10 15 20 25 30 35 0 Drain to Source Voltage, VDS (V) Drain Current, IDS (mA) Associated Gain, GA (dB) Drain Current, IDS (mA) Noise Figure, NF (dB) NE32400 TYPICAL PERFORMANCE CURVES (TA = 25°C) TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 2.0 V 100 OUTLINE DIMENSIONS (Units in µm) NE32400 CHIP 400 ±40 64 56 112 61 Transconductance, gm (mS) D 80 D 53 60 350 ±35 40 S G G S 60 150 20 96 0 0 5 10 15 20 25 30 35 40 45 50 41 113 84 45 47 40 Drain Current, IDS (mA) Chip Thickness: 140 µm Note: All dimensions are typical unless otherwise specified. ORDERING INFORMATION PART NUMBER NE32400 NE32400N NE32400M IDSS Range (mA) 15-70 mA 15-45 mA 45-70 mA NE32400 TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C) j50 j25 j100 +120˚ +90˚ 5 4 +60˚ j10 S11 30 GHz S22 .1 GHz S22 30 GHz S11 .1 GHz +150˚ 3 2 1 +30˚ 0 +180˚ – S21 .1 GHz .05 S12 .1 GHz .15 .2 .25 0˚ S21 S12 30 GHz 30 GHz -j10 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 10 mA) -150˚ -30˚ -120˚ -90˚ -60˚ VDS = 2 V, IDS = 10 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 26.0 28.0 30.0 MAG .999 .999 .999 .997 .989 .978 .967 .947 .927 .909 .891 .873 .856 .838 .820 .803 .786 .769 .753 .736 .721 .705 .691 .662 .635 .610 .587 .565 S11 ANG -1.3 -2.5 -6.1 -11.9 -23.1 -33.7 -43.7 -53.1 -62.2 -70.8 -79.0 -86.8 -94.3 -101.5 -108.4 -115.0 -121.4 -127.5 -133.5 -139.2 -144.7 -150.1 -155.3 -165.2 -174.6 176.5 168.1 160.0 MAG 5.039 5.021 4.966 4.876 4.702 4.535 4.375 4.222 4.075 3.933 3.797 3.666 3.540 3.418 3.301 3.188 3.079 2.973 2.871 2.773 2.677 2.585 2.495 2.324 2.163 2.011 1.867 1.732 S21 ANG 179.0 178.0 175.1 170.4 161.2 152.3 143.8 135.6 127.8 120.2 112.8 105.8 98.9 92.3 86.0 79.8 73.8 68.1 62.5 57.1 51.8 46.7 41.7 32.3 23.3 14.8 6.8 0.8 MAG .002 .004 .008 .016 .030 .042 .052 .062 .071 .079 .086 .092 .099 .104 .109 .114 .119 .123 .127 .131 .135 .138 .142 .148 .153 .159 .163 .168 S12 ANG 89.2 88.6 86.7 83.6 77.3 70.9 64.7 58.8 53.1 47.8 42.9 38.3 34.2 30.4 26.9 23.8 20.9 18.4 16.1 14.0 12.1 10.4 8.9 6.3 4.2 2.4 1.0 0.1 MAG .617 .617 .617 .617 .614 .611 .606 .600 .593 .585 .576 .567 .557 .547 .536 .525 .514 .503 .492 .481 .470 .460 .450 .433 .419 .410 .406 .407 S22 ANG -0.7 -1.4 -4.2 -8.4 -15.4 -22.4 -29.4 -36.0 -41.2 -46.1 -51.0 -55.8 -60.5 -65.1 -69.6 -73.9 -78.2 -82.4 -86.6 -90.6 -94.5 -98.3 -102.0 -109.1 -115.9 -122.3 -128.3 -133.9 .05 .03 .01 .01 .04 .07 .09 .12 .16 .20 .23 .26 .29 .32 .35 .37 .40 .43 .45 .48 .51 .54 .57 .64 .71 .76 .85 .92 K S21 (dB) 14.0 14.0 13.9 13.8 13.4 13.1 12.8 12.5 12.2 11.9 11.6 11.3 11.0 10.7 10.4 10.1 9.8 9.5 9.2 8.8 8.5 8.2 7.9 7.3 6.7 6.1 5.4 4.8 MAG2 (dB) 34.1 31.4 27.7 24.9 22.0 20.4 19.2 18.3 17.6 17.0 16.4 16.0 15.5 15.1 14.8 14.4 14.1 13.8 13.5 13.2 13.0 12.7 12.5 12.0 11.5 11.0 10.6 10.1 Notes: 1. S Parameters include Bond Wires. Gate: Total 2 wire(s), 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wire(s), 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wire(s), 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE32400 TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C) VDS = 2 V, IDS = 20 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 26.0 28.0 30.0 MAG .999 .999 .998 .995 .982 .965 .945 .923 .900 .878 .856 .835 .816 .797 .780 .764 .749 .734 .720 .706 .692 .679 .665 .637 .609 .583 .562 .552 S11 ANG -1.4 -2.7 -6.7 -13.2 -25.6 -37.1 -47.9 -58.1 -67.6 -76.5 -84.9 -92.8 -100.2 -107.3 -113.9 -120.3 -126.3 -132.1 -137.7 -143.1 -148.2 -153.3 -158.2 -167.7 -176.9 174.1 165.2 156.4 MAG 6.161 6.156 6.121 6.030 5.811 5.579 5.345 5.120 4.902 4.692 4.493 4.303 4.122 3.951 3.788 3.634 3.488 3.350 3.219 3.095 2.977 2.865 2.759 2.562 2.384 2.222 2.076 1.942 S21 ANG 178.9 177.8 174.5 169.2 159.3 149.9 141.0 132.6 124.6 117.0 109.7 102.8 96.1 89.7 83.6 77.7 72.0 66.5 61.1 56.0 51.0 46.2 41.5 32.5 23.9 15.7 7.7 0.0 MAG .002 .003 .006 .013 .027 .039 .049 .058 .066 .073 .079 .085 .090 .095 .099 .103 .107 .111 .115 .119 .123 .126 .130 .138 .147 .157 .167 .180 S12 ANG 89.3 88.6 86.5 83.2 76.8 70.7 65.0 59.7 54.7 50.0 45.7 41.7 38.0 34.6 31.4 28.6 26.0 23.6 21.5 19.6 17.9 16.4 15.1 12.8 11.1 9.6 8.4 7.1 MAG .554 .553 .550 .545 .535 .525 .516 .507 .498 .489 .481 .473 .465 .457 .450 .443 .436 .429 .423 .417 .411 .405 .399 .389 .380 .370 .362 .354 S22 ANG -0.6 -1.5 -3.7 -7.4 -15.5 -22.9 -30.3 -37.7 -42.2 -47.2 -52.1 -56.8 -61.4 -65.9 -70.3 -74.5 -78.6 -82.7 -86.6 -90.4 -94.1 -97.8 -101.3 -108.1 -114.6 -120.8 -126.7 -132.2 .007 .01 .03 .06 .09 .13 .16 .19 .23 .27 .31 .34 .37 .40 .43 .46 .48 .51 .54 .56 .59 .61 .64 .70 .75 .80 .84 .86 K |S21| (dB) 15.8 15.8 15.7 15.6 15.3 14.9 14.6 14.2 13.8 13.4 13.0 12.7 12.3 11.9 11.6 11.2 10.8 10.5 10.1 9.8 9.5 9.1 8.8 8.2 7.5 6.9 6.3 5.7 MAG2 (dB) 35.6 32.8 29.9 26.6 23.4 21.6 20.4 19.5 18.7 18.1 17.6 17.1 16.6 16.2 15.8 15.5 15.1 14.8 14.5 14.2 13.8 13.6 13.3 12.7 12.1 11.5 10.9 10.3 Notes: 1. S Parameters include Bond Wires. Gate: Total 2 wire(s), 1 per bond pad 0.0132" (335 µm) long each wire. Drain: Total 2 wire(s), 1 per bond pad 0.0094" (240 µm) long each wire. Source: Total 4 wire(s), 2 per side, 0.0070" (178 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE