NE32584C-T1A

DATA SHEET DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. 1.78 ±0.2 1 L L PACKAGE DIMENSIONS (Unit: mm) • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz • Gate Length : Lg d 0.2 Pm • Gate Width .. : Wg = 200 Pm 1.78 ±0.2 D 2 L 3 L 4 ORDERING INFORMATION SUPPLYING FORM STICK Tape & reel 1000 pcs./reel Tape & reel 5000 pcs./reel PART NUMBER NE32584C-SL NE32584C-T1 LEAD LENGTH L = 1.7 mm MIN. L = 1.0 r 0.2 mm L = 1.0 r 0.2 mm MARKING 1.7 MAX. 0.1 D 0.5 TYP. NE32584C-T1A ABSOLUTE MAXIMUM RATINGS (TA = 25 qC) Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID IG Ptot Tch Tstg 4.0 –3.0 IDSS 100 165 150 –65 to +150 V V mA 1. 2. 3. 4. Source Drain Source Gate PA mW qC qC RECOMMENDED OPERATING CONDITION (TA = 25 qC) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm Document No. P12275EJ2V0DS00 (2nd edition) (Previous No. TC-2515) Date Published February 1997 N Printed in Japan © 0.5 TYP. FEATURES 1994 NE32584C ELECTRICAL CHARACTERISTICS (TA = 25 qC) CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm NF Ga 11.0 20 ð0.2 45 MIN. TYP. 0.5 60 ð0.7 60 0.45 12.5 0.55 MAX. 10 90 ð2.0 UNIT TEST CONDITIONS VGS = ð3 V VDS = 2 V, VGS = 0 V VDS = 2 V, ID = 100 PA VDS = 2 V, ID = 10 mA VDS = 2 V, ID = 10 mA, f = 12 GHz PA mA V mS dB dB TYPICAL CHARACTERISTICS (TA = 25 qC) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 250 Pout - Total Power Dissipation - mW 200 ID - Drain Current - mA 80 VGS = 0 V 150 60 –0.2 V 40 100 –0.4 V 20 50 –0.6 V –0.8 V 0 50 100 150 200 250 0 1.5 VDS - Drain to Source Voltage - V MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2 V ID = 10 mA 3.0 TA - Ambient Temperature - ¡C DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 24 MSG. - Maximum Stable Gain - dB MAG. - Maximum Available Gain - dB |S21s|2 - Forward Insertion Gain - dB VDS = 2 V 60 ID - Drain Current - mA 20 MSG. 16 40 |S21s|2 12 MAG. 20 8 0 –2.0 0 –1.0 VGS - Gate to Source Voltage - V 0 1 2 3 6 8 10 14 20 30 f - Frequency - GHz 2 NE32584C Gain Calculations MSG. = ~S21~ ~S12~ K= 1 + ~'~2 ð ~S11~2 ð ~S22~2 2~S12~~S21~ MAG. = ~S21~ (K r K2ð1) — ~S12~ ' = S11 • S22 ð S21 • S12 NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA 20 NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V f = 12 GHZ Ga 13 14 NF - Noise Figure - dB NF - Noise Figure - dB Ga 16 Ga - Associated Gain - dB 12 2.0 1.5 1.0 0.5 11 10 1.0 12 0.5 NF 0 1 2 4 6 8 10 14 20 8 NF 4 30 0 10 20 30 f - Frequency - GHZ ID - Drain Current - mA Ga - Associated Gain - dB 3 NE32584C S-PARAMETERS VDS = 2 V, ID = 10 mA START 2 GHz, STOP 18 GHz, STEP 500 MHz S11 1.0 0.5 2.0 +135° +45° S12 +90° Marker 1 : 4 GHz 2 : 8 GHz 3 : 12 GHz 4 : 16 GHz 5 : 18 GHz 5 0 4 ∞ ±180° 1 5 4 3 –135° –0.5 2 –1.0 Rmax. = 1 1 –2.0 –90° Rmax. = 0.25 –45° 2 3 0 S21 +90° 0.5 +135° 1 2 5 +45° S22 1.0 2.0 ±180° 3 0 0 4 ∞ 3 5 –135° 4 –45° –0.5 –90° Rmax. = 5 –1.0 Rmax. = 1 –2.0 2 1 4 NE32584C S-PARAMETER MAG. AND ANG. VDS = 2 V, ID = 10 mA FREQUENCY GHZ MAG. S11 ANG. (deg.) MAG. S21 ANG. (deg.) MAG. S12 ANG. (deg.) MAG. S22 ANG. (deg.) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 .983 .973 .960 .943 .922 .912 .890 .870 .856 .840 .827 .816 .801 .784 .776 .752 .734 .713 .702 .685 .670 .649 .632 .607 .588 .559 .535 .506 .474 .445 .397 .356 .299 ð29.7 ð37.2 ð43.9 ð51.0 ð58.0 ð64.2 ð70.4 ð76.4 ð81.8 ð87.6 ð92.5 ð97.6 ð102.3 ð107.5 ð112.1 ð116.4 ð119.8 ð124.8 ð128.1 ð131.7 ð136.1 ð139.7 ð143.8 ð148.2 ð151.5 ð156.1 ð161.6 ð165.4 ð171.6 ð177.1 175.6 167.7 157.7 4.648 4.590 4.543 4.428 4.351 4.296 4.174 4.119 4.005 3.940 3.877 3.805 3.720 3.665 3.604 3.529 3.491 3.435 3.438 3.434 3.429 3.443 3.423 3.414 3.416 3.443 3.462 3.519 3.564 3.644 3.678 3.754 3.792 148.4 140.5 133.2 125.8 118.2 111.3 104.5 97.4 91.0 84.1 78.1 71.4 65.3 58.8 52.6 47.0 41.5 35.6 29.7 24.0 17.6 11.6 5.1 ð1.6 ð7.5 ð14.1 ð20.8 ð27.4 ð34.3 ð41.8 ð49.8 ð58.6 ð67.6 .027 .033 .038 .044 .049 .054 .057 .062 .064 .068 .069 .072 .074 .075 .075 .077 .078 .079 .082 .084 .084 .085 .085 .086 .086 .088 .089 .092 .092 .095 .097 .097 .094 69.0 65.3 60.2 55.7 50.2 45.6 41.6 37.7 32.7 29.7 25.1 21.8 18.4 14.9 11.0 9.0 4.9 2.5 ð1.5 ð5.9 ð8.4 ð12.8 ð17.3 ð22.1 ð25.3 ð28.8 ð34.2 ð39.4 ð43.6 ð52.4 ð58.3 ð66.4 ð74.5 .532 .520 .508 .491 .472 .458 .442 .428 .416 .403 .395 .385 .376 .372 .364 .359 .357 .351 .353 .352 .357 .364 .373 .384 .393 .406 .422 .437 .451 .466 .483 .484 .488 ð22.6 ð28.3 ð33.3 ð39.3 ð45.1 ð51.3 ð57.3 ð63.6 ð70.1 ð76.0 ð82.4 ð88.5 ð94.0 ð99.9 ð105.2 ð112.7 ð118.8 ð126.0 ð133.7 ð140.6 ð147.5 ð155.0 ð161.3 ð168.0 ð174.7 178.1 171.4 164.2 156.3 150.0 142.0 134.8 126.3 5 NE32584C AMP. PARAMETERS VDS = 2 V, ID = 10 mA FREQUENCY GHZ GUmax. dB GAmax. dB | S21 |2 dB | S12 |2 dB K Delay ns Mason’sU dB G1 dB G2 dB 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 29.58 27.27 25.46 23.65 22.13 21.43 20.16 19.32 18.62 18.00 17.50 17.07 16.53 16.06 15.75 15.18 14.81 14.38 14.25 14.04 13.88 13.73 13.56 13.35 13.24 13.15 13.10 13.14 13.13 13.25 13.21 13.24 13.16 15.61 15.71 15.59 15.26 15.65 15.45 14.73 14.20 13.35 13.24 13.15 12.93 12.77 12.66 12.41 12.29 12.05 11.91 11.77 11.61 11.41 11.28 11.14 10.95 10.86 10.72 10.73 10.72 10.70 10.74 10.69 10.66 10.67 10.74 10.79 10.93 11.04 11.23 11.31 11.49 11.58 ð31.40 ð29.58 ð28.44 ð27.10 ð26.26 ð25.40 ð24.82 ð24.18 ð23.83 ð23.39 ð23.16 ð22.83 ð22.62 ð22.46 ð22.44 ð22.27 ð22.21 ð22.02 ð21.68 ð21.53 ð21.55 ð21.41 ð21.36 ð21.34 ð21.32 ð21.11 ð21.05 ð20.76 ð20.77 ð20.46 ð20.25 ð20.28 ð20.55 .16 .19 .25 .30 .37 .39 .44 .48 .52 .55 .59 .60 .64 .68 .72 .76 .81 .85 .84 .87 .89 .91 .94 .98 1.00 1.00 1.01 1.00 1.01 1.00 1.00 1.04 1.09 .044 .044 .040 .041 .042 .039 .038 .039 .036 .038 .034 .037 .034 .036 .035 .031 .030 .033 .033 .032 .035 .034 .036 .037 .033 .037 .037 .036 .039 .042 .044 .049 .050 31.704 26.609 26.243 27.185 26.453 28.874 28.826 30.042 31.112 26.111 22.789 34.849 34.181 14.79 12.67 11.02 9.53 8.26 7.74 6.81 6.14 5.74 5.32 5.00 4.76 4.46 4.13 4.00 3.62 3.36 3.09 2.95 2.75 2.59 2.38 2.22 1.99 1.85 1.63 1.46 1.29 1.11 .96 .75 .59 .41 1.44 1.37 1.30 1.20 1.09 1.02 .94 .88 .83 .77 .74 .70 .66 .65 .62 .60 .59 .57 .58 .57 .59 .62 .65 .69 .73 .78 .85 .92 .99 1.06 1.16 1.16 1.18 6 NE32584C S-PARAMETER MAG. AND ANG. VDS = 2 V, ID = 15 mA FREQUENCY GHZ MAG. S11 ANG. (deg.) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 .981 .955 .911 .877 .839 .809 .781 .752 .710 .679 .646 .608 .562 .504 .446 .367 .273 ð30.4 ð44.8 ð59.0 ð71.4 ð82.9 ð93.5 ð103.1 ð112.7 ð120.6 ð128.7 ð136.2 ð143.9 ð151.5 ð160.6 ð170.5 177.0 160.9 5.265 5.113 4.878 4.647 4.432 4.268 4.085 3.942 3.805 3.736 3.723 3.712 3.699 3.738 3.845 3.949 4.050 MAG. S21 ANG. (deg.) 147.5 132.2 116.9 103.2 89.7 76.8 64.1 51.5 40.6 28.7 16.8 4.4 ð8.2 ð21.4 ð34.9 ð50.4 ð68.1 .062 .037 .047 .055 .061 .067 .070 .075 .079 .082 .084 .085 .088 .091 .093 .096 .099 MAG. S12 ANG. (deg.) 71.1 60.9 52.4 43.1 35.6 28.1 22.6 15.5 9.1 2.3 ð5.0 ð13.4 ð20.8 ð29.5 ð40.4 ð54.5 ð72.1 .484 .460 .426 .396 .371 .351 .334 .325 .319 .318 .324 .343 .365 .395 .429 .466 .473 MAG. S22 ANG. (deg.) ð21.9 ð32.3 ð43.9 ð55.2 ð67.4 ð79.2 ð90.4 ð101.0 ð114.1 ð129.0 ð142.9 ð156.3 ð169.8 176.1 160.6 145.5 130.2 S-PARAMETER MAG. AND ANG. VDS = 2 V, ID = 20 mA FREQUENCY GHZ MAG. S11 ANG. (deg.) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 .979 .950 .907 .869 .832 .801 .772 .744 .702 .671 .634 .597 .551 .495 .434 .357 .261 ð30.6 ð45.1 ð59.3 ð71.7 ð83.2 ð93.6 ð103.1 ð112.8 ð120.3 ð128.3 ð136.0 ð143.3 ð150.5 ð159.3 ð169.2 179.6 164.4 5.586 5.411 5.136 4.882 4.644 4.459 4.255 4.108 3.958 3.891 3.871 3.856 3.839 3.877 3.976 4.079 4.195 MAG. S21 ANG. (deg.) 147.1 131.7 116.3 102.6 89.2 76.4 63.7 51.3 40.2 28.5 16.7 4.3 ð8.2 ð21.6 ð34.7 ð50.2 ð67.7 .025 .035 .045 .053 .059 .065 .070 .074 .077 .082 .086 .087 .090 .094 .094 .098 .098 MAG. S12 ANG. (deg.) 69.2 61.0 52.8 44.7 37.0 30.1 24.7 18.1 11.4 4.8 ð2.3 ð11.1 ð18.9 ð29.0 ð38.0 ð53.0 ð68.9 .456 .431 .398 .368 .345 .327 .312 .303 .298 .297 .304 .325 .348 .384 .421 .458 .469 MAG. S22 ANG. (deg.) ð21.4 ð31.4 ð42.3 ð53.4 ð65.3 ð76.8 ð87.4 ð97.7 ð110.8 ð125.7 ð139.0 ð153.3 ð166.8 179.4 163.1 148.0 132.4 7 NE32584C S-PARAMETER MAG. AND ANG. VDS = 1 V, ID = 10 mA FREQUENCY GHZ MAG. S11 ANG. (deg.) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 .987 .964 .927 .894 .860 .833 .806 .780 .739 .710 .673 .634 .588 .532 .473 .392 .298 ð29.7 ð43.9 ð58.0 ð70.5 ð82.0 ð92.5 ð102.3 ð112.3 ð120.1 ð128.4 ð136.6 ð144.6 ð152.5 ð162.0 ð172.9 173.7 155.7 4.627 5.522 4.335 4.158 3.987 3.854 3.701 3.587 3.475 3.417 3.415 3.410 3.399 3.455 3.557 3.667 3.768 MAG. S21 ANG. (deg.) 148.3 133.2 118.2 104.5 91.0 78.2 65.4 52.8 41.6 29.8 17.7 5.3 ð7.4 ð20.7 ð34.3 ð49.9 ð67.9 .028 .040 .051 .060 .069 .073 .078 .082 .086 .090 .092 .092 .095 .100 .103 .107 .111 MAG. S12 ANG. (deg.) 70.0 59.5 50.7 41.7 33.0 25.6 17.4 10.4 4.9 ð3.4 ð11.5 ð19.3 ð27.4 ð39.0 ð50.0 ð64.7 ð80.8 .475 .451 .416 .386 .361 .340 .321 .310 .303 .300 .305 .321 .342 .372 .403 .435 .435 MAG. S22 ANG. (deg.) ð22.4 ð33.0 ð44.9 ð57.0 ð69.9 ð82.0 ð94.2 ð105.3 ð119.5 ð135.2 ð149.4 ð163.9 ð177.3 168.5 152.2 137.4 121.6 S-PARAMETER MAG. AND ANG. VDS = 3 V, ID = 10 mA FREQUENCY GHZ MAG. S11 ANG. (deg.) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 .989 .967 .934 .901 .872 .847 .823 .798 .757 .730 .698 .661 .617 .561 .503 .428 .332 ð29.2 ð43.1 ð57.2 ð69.6 ð81.0 ð91.7 ð101.6 ð111.6 ð119.4 ð127.7 ð135.9 ð144.1 ð152.5 ð162.2 ð173.3 172.5 153.5 4.146 4.067 3.923 3.779 3.645 3.542 3.412 3.319 3.226 3.183 3.188 3.192 3.185 3.239 3.353 3.459 3.579 MAG. S21 ANG. (deg.) 149.0 134.1 119.1 105.5 92.0 79.1 66.2 53.5 42.4 30.3 18.2 5.7 ð7.1 ð20.4 ð33.9 ð49.6 ð67.5 .027 .038 .048 .055 .062 .066 .070 .071 .075 .077 .081 .081 .082 .084 .087 .091 .092 MAG. S12 ANG. (deg.) 69.6 59.5 50.5 41.0 34.5 25.9 19.2 12.8 7.3 0.3 ð6.0 ð13.0 ð20.4 ð29.2 ð38.8 ð52.5 ð68.5 .548 .525 .492 .464 .439 .420 .400 .391 .382 .376 .379 .395 .415 .440 .474 .506 .515 MAG. S22 ANG. (deg.) ð21.8 ð32.5 ð44.2 ð55.9 ð68.9 ð81.0 ð92.8 ð104.0 ð117.6 ð132.8 ð146.0 ð159.7 ð172.7 173.9 159.0 145.2 130.6 8 NE32584C NOISE PARAMETER 1 0.6 2 VDS = 2 V ID = 10 mA f = 12 GHZ 0.2 Γopt * 0.7 dB 5 0.8 dB ∞ 0 0.2 0.6 1.0 2.0 –0.2 –5 –2 –0.6 –1 VDS = 2 V, ID = 10 mA *opt. Rn/50 MAG. 0.86 0.76 0.69 0.63 0.59 0.54 0.48 0.40 0.31 ANG. (deg.) 22 45 70 96 122 147 171 ð165 ð144 0.27 0.25 0.18 0.11 0.08 0.04 0.04 0.05 0.06 Freq. (GHz) 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFmin. (dB) 0.29 0.30 0.33 0.36 0.40 0.45 0.54 0.68 0.85 Ga (dB) 20.0 18.3 16.5 15.0 13.6 12.5 12.0 11.8 11.5 9 NE32584C RECOMMENDED SOLDERING CONDITIONS The following conditions (see table below) must be met when soldering this product. Please consult with our sales offices in case other soldering process is used, or in case soldering is done under different conditions. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). [NE32584C] Soldering process Infrared ray reflow Soldering conditions Peak package’s surface temperature: 230 °C or below, Reflow time: 30 seconds or below (210 °C or higher), Number of reflow process: 1, Exposure limit*: None Terminal temperature: 230 °C or below, Flow time: 10 seconds or below, Exposure limit*: None Symbol IR30-00 Partial heating method * Exposure limit before soldering after dry-pack package is opened. Storage conditions: 25 °C and relative humidity at 65 % or less. Note Do not apply more than a single process at once, except for “Partial heating method”. PRECAUTION Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with shottky barrier gate. Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. 10 NE32584C [MEMO] 11 NE32584C No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5