NE325S01

C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA • GATE LENGTH: ≤ 0.20 µm • GATE WIDTH: 200 µm • LOW COST PLASTIC PACKAGE Ga 16 1.0 12 0.5 8 DESCRIPTION 0 NF 1 2 4 6 8 10 14 20 4 30 The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Frequency, f (GHz) RECOMMENDED OPERATING CONDITIONS (TA = 25°C) SYMBOLS VDS ID Pin CHARACTERISTICS Drain to Source Voltage Drain Current Input Power UNITS MIN TYP MAX V mA dBm 2 10 3 20 0 ELECTRICAL CHARACTERISTICS (TA = 25°C) NE325S01 S01 UNITS dB dB mA mS V µA 11.0 20 45 -0.2 MIN TYP 0.45 12.5 60 60 -0.7 0.5 -2.0 10 90 MAX 0.55 PART NUMBER PACKAGE OUTLINE SYMBOLS NF1 GA1 IDSS gm VGS(off) IGSO PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz Saturated Drain Current, VDS = 2 V, VGS = 0 V Transconductance, VDS = 2 V, ID = 10 mA Gate to Source Cutoff Voltage, VDS = 2 V,ID = 100 µA Gate to Source Leak Current, VGS = -3 V Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories Associated Gain, GA (dB) • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz 20 NE325S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGS ID IG PT TCH Tstg PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V mA µA mW °C °C RATINGS 4.0 -3.0 VDS = 2V f = 12 GHz 14 Ga NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 100 165 125 -65 to +125 12 2.0 1.5 1.0 0.5 NF 0 10 20 30 11 10 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. Drain Current, ID (mA) TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Total Power Dissipation, PT (mW) 200 80 Drain Current, ID (mA) VGS = 0 V 60 -0.2 V 150 100 40 -0.4 V 20 -0.6 V -0.8 V 50 0 50 100 150 200 250 0 1.5 3.0 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 24 Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, IS21Sl2 (dB) VDS = 2 V VDS = 2 V ID = 10 mA 20 MSG. MAG. 16 Drain Current, ID (mA) 60 40 12 IS21sl 2 20 8 0 -2.0 -1.0 0 4 1 2 4 6 8 10 14 20 30 Gate to Source Voltage, VGS (V) Frequency, f (GHz) Associated Gain, GA (dB) Noise Figure, NF (dB) IDSS 13 NE325S01 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) 1.0 0.5 18 GHz +90° 2.0 +135° +45° 18 GHz S21 2 GHz S12 2 GHz 18 GHz 18 GHz 0 S22 2 GHz S11 2 GHz ∞ +180° 0 - 0.5 - 1.5 - 2.0 Coordinates in Ohms Frequency in GHz VDS = 2 V, IDS = 10 mA -135° -90° -45° VDS = 2 V, ID = 10 mA FREQUENCY (GHz) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.969 0.957 0.944 0.926 0.906 0.884 0.852 0.819 0.785 0.753 0.723 0.696 0.670 0.643 0.622 0.597 0.571 0.538 0.503 0.475 0.453 0.435 0.422 0.413 0.408 0.405 0.406 0.410 0.418 0.434 0.455 0.484 0.521 ANG -24.84 -30.87 -36.91 -43.10 -49.43 -55.58 -62.02 -68.28 -74.48 -80.82 -87.00 -93.23 -99.64 -105.78 -112.38 -119.18 -126.73 -134.31 -142.42 -150.84 -160.32 -170.10 179.93 169.88 159.68 149.30 138.94 128.31 117.54 106.98 96.84 87.21 77.71 MAG 4.798 4.756 4.730 4.699 4.663 4.600 4.523 4.449 4.370 4.276 4.200 4.136 4.066 4.011 3.968 3.920 3.857 3.799 3.740 3.621 3.545 3.482 3.423 3.362 3.309 3.250 3.182 3.108 3.031 2.943 2.869 2.799 2.720 S21 ANG 152.65 146.03 139.49 132.75 126.04 119.31 112.42 105.80 99.62 93.42 87.18 81.15 75.30 69.03 63.04 56.93 50.48 44.20 38.29 32.04 25.99 20.11 14.37 8.03 1.70 -4.80 -11.37 -18.01 -24.47 -30.70 -37.11 -43.55 -50.10 MAG 0.026 0.032 0.038 0.044 0.050 0.055 0.060 0.064 0.068 0.072 0.075 0.078 0.081 0.084 0.087 0.090 0.092 0.094 0.096 0.098 0.099 0.101 0.102 0.103 0.104 0.106 0.107 0.108 0.109 0.110 0.111 0.111 0.111 S12 ANG 73.02 68.77 64.98 60.81 56.76 52.64 48.77 44.73 41.16 37.54 34.03 30.60 27.44 24.34 21.18 18.07 14.85 11.58 8.35 5.11 1.78 -1.21 -4.53 -7.66 -11.00 -14.39 -17.92 -21.80 -25.41 -29.36 -33.17 -37.06 -41.23 MAG 0.574 0.566 0.556 0.544 0.531 0.515 0.496 0.475 0.454 0.434 0.414 0.396 0.379 0.363 0.347 0.330 0.308 0.287 0.262 0.237 0.214 0.191 0.173 0.160 0.151 0.145 0.144 0.148 0.154 0.168 0.188 0.214 0.246 S22 ANG -18.45 -22.99 -27.48 -32.03 -36.56 -41.22 -45.75 -50.42 -55.09 -59.78 -64.50 -69.09 -73.80 -78.31 -82.72 -87.24 -91.89 -96.77 -102.63 -109.34 -116.89 -126.44 -137.47 -149.76 -161.84 -174.45 171.72 157.82 142.64 127.26 114.01 102.68 92.62 K 0.237 0.277 0.310 0.358 0.403 0.454 0.524 0.595 0.659 0.716 0.771 0.816 0.854 0.894 0.919 0.950 0.995 1.047 1.100 1.156 1.200 1.227 1.255 1.278 1.294 1.302 1.316 1.330 1.343 1.350 1.344 1.330 1.303 MAG1 (dB) 22.661 21.721 20.951 20.286 19.697 19.224 18.773 18.421 18.080 17.737 17.482 17.245 17.007 16.790 16.591 16.390 16.225 14.743 13.983 13.284 12.834 12.500 12.220 11.970 11.771 11.572 11.364 11.155 10.940 10.739 10.619 10.577 10.591 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE325S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 0.69nH 6 ohms CGS_PKG 0.07pF Lsx 0.07nH Rsx 0.06 ohms CDS_PKG 0.05PF Q1 0.6nH Rdx 6 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.8 0 8 0.103 0.092 0.08 2 1 0.715 3e-13 1.22 0 0 4e-12 0.13e-12 5000 1e-9 0.3e-12 0.02e-12 0.3 0.1 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 3 2 2 0 0 1 27 3 1.43 0 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 30 mA IDSS = 59.9 ma @ VGS = 0, VDS = 2 V Date: 2/98 (1) Series IV Libra TOM Model NE325S01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S01 2.0 ± 0.2 TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 2 V, ID = 10 mA FREQ. (GHz) 2 NFMIN (dB) 0.29 0.30 0.32 0.35 0.40 0.45 0.53 0.67 0.83 GA (dB) 20.0 18.3 16.5 15.0 13.6 12.5 12.0 11.8 11.5 ΓOPT MAG 0.93 0.80 0.65 0.49 0.36 0.27 0.24 0.30 0.47 ANG 14 29 48 72 102 139 -176 -122 -58 Rn/50 0.38 0.33 0.25 0.18 0.11 0.08 0.07 0.10 0.22 1 4 6 8 10 0. 2 2. 0 ± D 3 0.65 TYP. 1.9 ± 0.2 1.6 2.0 ± 0.2 0.5 TYP. 2 12 14 16 18 4 1. 2. 3. 4. 1.5 MAX Source Drain Source Gate 0.125 ± 0.05 TYPICAL CONSTANT NOISE FIGURE CIRCLE (VDS = 2 V, ID = 10 mA, f = 12 GHz) 1 0.6 2 5 0.2 0.4 MAX 4.0 ± 0.2 ORDERING INFORMATION PART NUMBER NE325S01 NE325S01-T1 NE325S01-T1B SUPPLY FORM Bulk Tape & Reel 1000 pcs./reel Tape & Reel 4000 pcs./reel PACKAGE OUTLINE S01 S01 S01 -0.6 -0.2 0 0.2 * Γopt 0.6 0.8 1.0 -5 -2 -1 1.0 2.0 ∞ Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 04/29/2002