NE33200

SUPER LOW NOISE HJ FET NE33200 FEATURES • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) 4 3.5 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 21 18 15 12 9 6 NF 0.5 0 1 10 30 3 0 • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm 3 2.5 2 1.5 1 DESCRIPTION The NE33200 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 4 GHz f = 12 GHz Associated Gain, VDS = 2 V, ID = 10 mA, f = 4 GHz f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Saturated Drain Current, VDS = 2 V, VGS = 0 V Pinch-off Voltage, VDS = 2 V, ID = 100 µA Transconductance, VDS = 2 V, ID = 10 mA Gate to Source Leakage Current, VGS = -5 V Thermal Resistance (Channel to Case) UNITS dB dB dB dB dBm dBm dB dB mA V mS µA °C/W 15 -2.0 45 MIN NE33200 00 (Chip) TYP 0.35 0.75 15.0 10.5 11.2 12.0 11.8 12.8 40 -0.8 70 0.5 10 240 80 -0.2 MAX 1.0 GA 1 9.5 P1dB G1dB IDSS VP gm IGSO RTH(CH-C)2 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink. California Eastern Laboratories Associated Gain, GA (dB) Ga NE33200 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGS IDS IGRF PIN TCH TSTG PT2 PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current RF Input (CW) Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA µA dBm °C °C mW RATINGS 4.0 -3.0 IDSS 280 15 175 -65 to +175 240 TYPICAL NOISE PARAMETERS1 (TA = 25°C) VDS = 2 V, IDS = 10 mA FREQ. (GHz) 1 2 4 6 8 10 12 14 16 18 20 22 24 26 NFOPT (dB) 0.29 0.31 0.35 0.42 0.52 0.63 0.75 0.9 1.05 1.25 1.5 1.8 2.2 2.6 GA (dB) 21.3 18.3 15.3 13.5 12.2 11.3 10.5 9.9 9.3 8.8 8.3 7.9 7.6 7.3 0.82 0.81 0.76 0.71 0.64 0.55 0.48 0.41 0.37 0.35 0.37 0.38 0.39 0.40 ΓOPT MAG ANG 8 17 41 63 77 95 112 130 144 164 180 -166 -154 -142 Rn/50 0.39 0.36 0.33 0.30 0.27 0.24 0.22 0.19 0.18 0.15 0.13 0.11 0.10 0.08 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With chip mounted on infinite heat sink. TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 (TA = 25°C) Note: 1. Noise Parameters include Bond Wires: Gate: Total 2 wires, 1 per bond pad 0.0129" (327 µm) long each wire. Drain: Total 2 wires, 1 per bond pad 0.0118" (300 µm) long each wire. Source: Total 4 wires, 2 per side, 0.0071" (180 µm) long each wire. Wire: 0.0007" (17.8 µm) dia. gold. NOISE FIGURE and GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz 2.0 16 Total Power Dissipation, (PT) mW Noise Figure, NF (dB) 200 1.6 14 150 1.2 12 100 Mounted on Infinite Heat sink 0.8 GA 0.4 NF 10 50 Tuned at each IDS 8 Tuned at 10 mA only 0 0 50 100 117 150 200 250 0 0 5 10 15 20 25 30 35 40 6 Ambient Temperature, TA (°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 Drain Current, IDS (mA) TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 2.0 V 120 Drain Current, IDS (mA) 40 Transconductance, gm (mS) VGS = 0 V 100 30 -0.1 V 80 60 20 -0.2 V 40 10 -0.3 V -0.4 V -0.5 V 20 0 0 0.5 1 1.5 2 0 Drain to Source Voltage, 2.5 VDS (V) 3 0 10 20 30 40 50 Drain Current, IDS (mA) Associated Gain, GA (dB) NE33200 TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25°C) j50 j25 j100 +90˚ +120˚ +60˚ +150˚ j10 26.5 GHz S22 .1 GHz +30˚ 0 10 25 50 26.5 GHz 100 S11 .1 GHz S21 .1 GHz S12 .1 GHz 0˚ 26.5 GHz 26.5 GHz -j10 -150˚ -30˚ -j25 -j50 -j100 -120˚ -90˚ -60˚ VDS = 2 V, IDS = 10 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 26.5 MAG .999 .999 .998 .994 .974 .940 .903 .861 .822 .798 .750 .728 .724 .722 .724 .714 .695 .676 .665 .648 .632 .641 S11 ANG -1.8 -3.6 -8.9 -17.7 -34.6 -49.9 -63.2 -75.1 -85.9 -93.2 -102.2 -110.1 -117.8 -132.6 -146.6 -158.3 -169.5 -179.4 168.5 158.1 147.8 145.0 MAG 5.854 5.850 5.846 5.797 5.614 5.299 4.919 4.512 4.210 3.900 3.642 3.420 3.304 3.045 2.876 2.668 2.483 2.296 2.115 1.897 1.817 1.832 S21 ANG 178.8 177.2 173.5 167.0 154.1 142.1 131.1 121.4 112.5 105.5 97.8 89.9 83.8 69.8 57.2 46.2 35.7 26.5 13.7 0.4 -12.1 -14.3 MAG .003 .005 .011 .022 .044 .063 .079 .089 .099 .103 .103 .104 .109 .115 .120 .125 .132 .143 .153 .163 .167 .168 S12 ANG 87.5 86.2 84.6 82.0 71.2 62.4 52.5 46.4 39.7 35.2 27.7 23.9 21.9 14.7 4.9 -2.4 -9.8 -10.5 -14.9 -17.7 -19.9 -18.3 MAG .631 .632 .632 .628 .618 .598 .578 .556 .532 .528 .495 .479 .468 .433 .398 .376 .373 .394 .401 .388 .378 .372 S22 ANG -1.4 -2.5 -6.1 -12.1 -23.8 -34.9 -43.9 -51.5 -59.1 -60.8 -65.1 -69.1 -74.6 -86.7 -101.2 -112.4 -119.5 -124.8 -130.3 -139.5 -148.9 -152.5 0.05 0.04 0.02 0.00 0.04 0.09 0.17 0.23 0.29 0.35 0.48 0.55 0.54 0.56 0.57 0.61 0.66 0.66 0.68 0.75 0.79 0.76 K S21 (dB) 15.3 15.4 15.3 15.3 15.0 14.5 13.8 13.1 12.5 11.8 11.2 10.7 10.4 9.7 9.2 8.5 7.9 7.2 6.5 5.5 5.2 5.3 MAG2 (dB) 32.9 30.7 27.3 24.2 21.1 19.2 17.9 17.0 16.3 15.8 15.5 15.2 14.8 14.2 13.8 13.3 12.7 12.1 11.4 10.7 10.4 10.4 VDS = 2 V, IDS = 30 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 26.5 MAG .999 .999 .997 .991 .968 .929 .889 .846 .805 .777 .728 .709 .708 .707 .710 .704 .680 .667 .661 .654 .639 .641 S11 ANG -2.0 -3.9 -9.5 -18.8 -36.6 -52.7 -66.4 -78.7 -89.3 -98.8 -107.8 -115.5 -123.2 -137.7 -151.1 -162.7 -173.2 177.0 164.9 153.8 144.0 142.2 MAG 7.441 7.436 7.422 7.317 7.041 6.570 6.058 5.518 5.083 4.686 4.335 4.046 3.879 3.551 3.293 3.055 2.835 2.598 2.384 2.141 2.020 2.059 S21 ANG 178.7 177.1 173.1 166.4 153.1 140.6 129.9 120.2 111.5 103.6 96.3 88.8 82.9 69.6 57.0 46.0 35.9 27.1 15.4 3.1 -9.2 -11.6 MAG .002 .003 .009 .017 .032 .047 .059 .067 .076 .083 .082 .084 .089 .097 .102 .110 .118 .134 .149 .162 .171 .175 S12 ANG 87.9 86.5 84.7 82.2 72.3 63.9 56.1 50.5 44.2 39.5 32.5 30.6 30.2 23.8 15.7 8.8 2.4 -0.5 -4.0 -6.8 -10.4 -11.7 MAG .484 .483 .483 .482 .472 .458 .447 .431 .411 .403 .375 .365 .359 .333 .311 .294 .300 .320 .336 .327 .310 .308 S22 ANG -1.1 -2.7 -6.5 -12.8 -24.8 -36.3 -45.3 -52.3 -60.0 -64.1 -67.7 -70.9 -76.6 -89.5 -105.0 -117.1 -124.4 -128.7 -133.8 -141.0 -150.5 -156.2 0.06 0.04 0.04 0.04 0.09 0.16 0.23 0.31 0.38 0.44 0.59 0.65 0.63 0.64 0.65 0.67 0.71 0.69 0.67 0.70 0.75 0.72 K S21 (dB) 17.4 17.4 17.4 17.3 16.9 16.3 15.6 14.8 14.1 13.4 12.7 12.1 11.8 11.0 10.4 9.7 9.1 8.3 7.5 6.6 6.1 6.3 MAG2 (dB) 35.7 33.9 29.2 26.3 23.4 21.4 20.1 19.1 18.2 17.5 17.2 16.8 16.4 15.6 15.1 14.4 13.8 12.9 12.0 11.2 10.7 10.7 See notes on back page. NE33200 TYPICAL COMMON SOURCE, REVERSE CHANNEL SCATTERING PARAMETERS1 (TA = 25°C) j50 j25 j100 +120˚ +90˚ +60˚ +150˚ +30˚ j10 26.5 GHz 0 10 25 50 S22 .1 GHz 100 S11 .1 GHz +180˚ – 26.5 GHz S21 .1 GHz S12 .1 GHz 26.5 GHz 0˚ 26.5 GHz -150˚ -30˚ -j25 -j50 -j100 -120˚ -90˚ -60˚ VDS = -2 V, IDS = 10 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 26.5 MAG 0.998 0.999 0.998 1.000 0.998 0.997 0.992 0.987 0.979 0.965 0.960 0.955 0.954 0.968 0.982 0.986 0.970 0.962 0.978 1.039 1.109 1.112 S11 ANG -0.8 -1.6 -3.8 -7.7 -15.3 -22. -29.5 -36.3 -42.9 -48.9 -55.1 -60.7 -66.6 -77.1 -87.3 -98.1 -108.8 -120.3 -130.6 -141.1 -152.1 -154.7 MAG 1.492 1.490 1.489 1.480 1.480 1.474 1.464 1.439 1.428 1.390 1.379 1.320 1.323 1.298 1.301 1.302 1.268 1.199 1.119 1.071 1.076 1.068 S21 ANG -0.5 -1.3 -3.1 -5.9 -11.9 -17.9 -23.8 -29.2 -34.7 -40.2 -46.4 -52.2 -56.2 -66.4 -75.6 -85.8 -95.9 -104.0 -113.2 -123.5 -137.0 -140.6 MAG .003 .005 .013 .024 .051 .075 .101 .127 .151 .172 .191 .212 .243 .295 .348 .395 .453 .484 .518 .545 .574 .569 S12 ANG 93.9 86.2 89.7 88.7 80.6 78.3 73.5 69.2 64.8 59.2 55.5 51.8 47.2 36.7 24.6 12.1 1.1 -7.5 -16.8 -23.7 -33.5 -36.8 MAG .586 .587 .585 .588 .585 .582 .577 .573 .575 .573 .573 .574 .577 .578 .571 .530 .493 .465 .467 .497 .485 .477 S22 ANG 179.5 179.3 177.7 175.6 171.0 167.0 162.7 158.5 154.5 151.1 147.3 143.4 137.8 125.1 111.9 99.8 90.0 80.7 67.9 55.5 40.8 37.3 K 0.25 0.12 0.05 -0.03 0.02 0.01 0.04 0.06 0.09 0.15 0.17 0.18 0.16 0.13 0.11 0.14 0.21 0.20 0.14 -0.00 -0.11 -0.11 S21 (dB) 3.5 3.5 3.4 3.4 3.4 3.4 3.3 3.2 3.1 2.9 2.8 2.4 2.4 2.3 2.3 2.3 2.1 1.6 1.0 0.6 0.6 0.6 MAG2 (dB) 27.0 24.7 20.6 17.9 14.6 12.9 11.6 10.5 9.7 9.1 8.6 7.9 7.4 6.4 5.7 5.2 4.5 3.9 3.0 2.9 2.7 2.7 VDS = -2 V, IDS = 30 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 26.5 MAG 0.999 1.000 0.998 0.997 0.998 0.998 0.993 0.990 0.982 0.966 0.964 0.961 0.961 0.974 0.990 0.998 0.985 0.982 0.995 1.056 1.132 1.123 S11 ANG -0.7 -1.5 -3.6 -7.4 -14.7 -21.6 -28.3 -34.8 -41.3 -48.0 -54.4 -59.9 -65.9 -76.3 -86.5 -97.1 -107.9 -119.1 -129.7 -140.0 -150.8 -153.5 MAG 1.574 1.575 1.569 1.565 1.562 1.558 1.550 1.525 1.518 1.472 1.463 1.395 1.401 1.376 1.378 1.383 1.350 1.273 1.173 1.121 1.118 1.119 S21 ANG -0.3 -1.3 -2.9 -6.1 -12.0 -17.8 -23.6 -28.9 -34.4 -39.7 -46.0 -52.0 -56.2 -65.7 -75.6 -85.8 -96.1 -104.0 -112.5 -122.6 -135.6 -139.9 MAG .002 .005 .012 .022 .043 .066 .087 .110 .132 .155 .172 .193 .220 .268 .319 .364 .417 .448 .485 .513 .537 .539 S12 ANG 135.9 96.9 87.2 87.9 82.0 79.8 75.1 71.7 67.0 61.7 57.8 55.0 51.0 40.8 28.9 17.1 6.0 -2.0 -11.7 -18.5 -27.8 -30.6 MAG .687 .686 .687 .685 .684 .685 .680 .678 .680 .677 .680 .684 .690 .700 .696 .651 .612 .582 .582 .611 .606 .584 S22 ANG 179.7 179.2 177.8 175.9 171.3 167.5 164.0 159.7 156.3 153.1 149.6 145.7 140.6 128.7 116.0 104.3 95.2 87.1 74.2 61.8 48.3 45.2 -0.33 -0.09 0.06 0.02 0.01 -0.01 0.03 0.02 0.06 0.11 0.13 0.13 0.10 0.07 0.07 0.10 0.17 0.15 0.08 -0.07 -0.18 -0.15 K S21 (dB) 3.9 3.9 3.9 3.9 3.9 3.8 3.8 3.7 3.6 3.4 3.3 2.9 2.9 2.8 2.8 2.8 2.6 2.1 1.4 1.0 1.0 1.0 MAG2 (dB) 29.0 25.0 21.2 18.5 15.6 13.7 12.5 11.4 10.6 9.8 9.3 8.6 8.0 7.1 6.3 5.8 5.1 4.5 3.8 3.4 3.2 3.2 See notes on back page. NE33200 NE33200 LINEAR MODEL SCHEMATIC LG 0.19 GATE RG 0.16 GGS 1E-5 CGS 0.22 CDG 0.04 CDC 0.065 g t f= 281GHz RD 0.24 LD 0.2 DRAIN RDS CDS 0.05 RI 0.52 RS 0.19 LS 0.03 SOURCE BIAS DEPENDENT MODEL PARAMETERS Parameters g t RDS 2 V, 10 mA 73 mS 2.5 pSec 220 ohms 2 V, 20 mA 96 mS 3.5 pSec 160 ohms UNITS Parameter capacitance inductance resistance conductance Units picofarads nanohenries ohms millisiemans MODEL RANGE Frequency: Bias: Date: 0.1 to 26.5 GHz VDS = 2 V, ID = 10, 20 mA 7/19/96 NE33200 NE33200 NONLINEAR MODEL RD LD DRAIN 5 R COMP 270 3 CRF X 10000 RS 1 0.08 SCHEMATIC Q1 LG GATE 0.17 2 1 LS 0.03 SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters BETA VTO ALPHA LAMBDA THETA2 TAU VBR IS N VBI FC RC CRF RD RG RS RIN CGSO3 CGDO4 DELTA1 DELTA25 CDS CGS Q1 0.0989 -0.6 8 0.2 0 4e-12 Infinity 8e-14 1 1 0.5 Infinity 0 0 0 0 0 0.4e-12 0.05e-12 0.3 0.5 0.16e-12 0 Parameters CGD KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 0 0 1 27 3 1.43 0 0 1 UNITS Parameter capacitance inductance resistance Units picofarads nanohenries ohms MODEL RANGE Frequency: Bias: Date: 0.1 to 10 GHz VDS = 2 V, ID = 10 mA to 20 mA 8/6/96 (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) THETA B (3) CGSO CGS (4) CGDO CGD (5) DELTA2 VDELTA NE33200 CHIP DIMENSIONS (Units in µm) NE33200 (CHIP) ORDERING INFORMATION PART NUMBER NE33200 IDSS RANGE (mA) Standard (15 - 80) 15 - 50 50 - 80 400±40 mm 120 66 56 56 NE33200N NE33200M D D 350±35 S G G S 61 88 45 31 47 25 13 Chip Thickness: 140 µm typical Note: All dimensions are typical unless otherwise specified Notes: 1. S-Parameters include Bond Wires: Gate: Total 2 wires, 1 per bond pad 0.0129" (327 µm) long, each wire. Drain: Total 2 wires, 1 per bond pad 0.0118" (300 µm) long, each wire. Source: Total 4 wires, 2 per side, 0.0071" (180 µm) each wire. Wire: 0.0007" (17.8 µm) dia. gold. 2. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 04/12/2001 DATA SUBJECT TO CHANGE WITHOUT NOTICE