NE33284AS

SUPER LOW NOISE HJ FET NE33284A FEATURES • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz Noise Figure, NF (dB) 1.4 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 1.2 GA 1 21 • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE 18 0.8 15 0.6 12 0.4 NF 0.2 9 DESCRIPTION The NE33284A is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. 6 0 1 10 20 3 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 GA 1 P1dB PARAMETERS AND CONDITIONS Optimum Noise Figure, VDS = 2.0 V, IDS = 10 mA, f = 12 GHz f = 4 GHz Associated Gain, VDS = 2.0 V, IDS = 10 mA, f = 12 GHz f = 4 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2.0 V, IDS = 10 mA VDS = 2.0 V, IDS = 20 mA Gain at P1dB, f = 12 GHz VDS = 2.0 V, IDS = 10 mA VDS = 2.0 V, IDS = 20 mA Saturated Drain Current, VDS = 2.0 V,VGS = 0 V Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA Transconductance, VDS = 2.0 V, ID = 10 mA Gate to Source Leakage Current, VGS = -3.0 V Thermal Resistance (Channel to Ambient) Thermal Resistance (Channel to Case) UNITS dB dB dB dB dBm dBm dB dB mA V mS µA °C/W °C/W 15 -2.0 45 9.5 13.0 MIN NE33284A 84AS TYP 0.75 0.35 10.5 15.0 11.2 12.0 10.8 11.0 40 -0.8 70 0.5 630 280 310 10.0 80 -0.2 MAX 1.0 0.45 G1dB IDSS VP gm IGSO RTH (CH-A) RTH (CH-C)2 Notes: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. 2. RTH (channel to case) for package mounted on an infinite heat sink. California Eastern Laboratories Associated Gain, GA (dB) NE33284A ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGS IDS IGRF PIN TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current RF Input (CW) Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA µA dBm °C °C mW RATINGS 4.0 -3.0 IDSS 280 15 150 -65 to +150 165 TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 2 V, IDS = 10 mA FREQ. (GHz) 1 2 4 6 8 10 12 14 16 18 NFOPT (dB) 0.29 0.31 0.35 0.42 0.52 0.63 0.75 0.90 1.05 1.25 GA (dB) 21.3 18.3 15.0 13.5 12.2 11.3 10.5 9.9 9.3 8.8 0.85 0.82 0.74 0.67 0.59 0.52 0.45 0.37 0.30 0.22 ΓOPT MAG ANG 28 40 62 85 107 130 168 -146 -100 -54 Rn/50 0.48 0.27 0.16 0.13 0.10 0.09 0.10 0.14 0.22 0.34 Note: 1.Operation in excess of any one of these conditions may result in permanent damage. TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 (TA = 25°C) TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 2.0 V 120 Total Power Dissipation, PT (mW) 200 Infinite Heat sink Transconductance, gm (mS) 250 100 80 150 60 100 Free Air 50 40 20 0 0 25 50 75 100 125 150 175 200 0 0 10 20 30 40 50 Ambient Temperature, TA (°C) Drain Current, IDS (mA) NOISE FIGURE AND GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz 2 16 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 VGS = 0 V 30 -0.1 V 1.2 GA 12 20 -0.2 V 0.8 NF 0.4 Tuned @ 10 mA only Tuned @ 10 mA only Tuned @ each IDS Tuned @ each IDS 0 0 5 10 15 20 25 30 35 40 10 10 -0.3 V -0.4 V -0.5 V 8 0 0 0.5 1 1.5 2 2.5 3 6 Drain to Source Voltage, VDS (V) Drain Current, IDS (mA) Associated Gain, GA (dB) Drain Current, IDS (mA) 40 1.6 14 Noise Figure, NF (dB) NE33284A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) j50 j25 j100 +90˚ +120˚ +60˚ +150˚ j10 S22 20 GHz 0 10 25 50 100 +30˚ S11 20 GHz S12 .1 GHz S22 .1 GHz S11 .1 GHz S21 .1 GHz S21 20 GHz -150˚ S12 20 GHz -120˚ -90˚ -30˚ 0˚ -j25 -j50 -j100 -60˚ VDS = 2 v, IDS = 10 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG .999 .999 .998 .981 .935 .876 .809 .738 .671 .619 .578 .542 .499 .455 .431 .425 .417 .402 .393 .396 .426 .462 .491 ANG -1.7 -4.0 -10.4 -21.3 -41.3 -60.8 -78.1 -94.7 -110.7 -125.6 -139.1 -151.7 -164.8 -179.3 164.4 148.0 133.1 116.8 98.3 78.7 61.5 49.2 33.8 MAG 5.712 5.660 5.660 5.604 5.414 5.117 4.732 4.382 4.058 3.746 3.491 3.289 3.130 2.995 2.855 2.752 2.664 2.579 2.515 2.430 2.348 2.281 2.208 S21 ANG 178.3 176.3 170.2 160.0 141.1 123.0 106.6 91.7 77.6 64.1 52.2 40.1 28.3 16.4 4.7 -6.8 -17.9 -30.2 -42.7 -55.5 -68.3 -80.1 -93.7 MAG .002 .004 .011 .022 .041 .056 .071 .080 .087 .094 .100 .106 .113 .121 .126 .133 .139 .149 .155 .163 .170 .173 .176 S12 ANG 89.2 88.9 83.5 76.3 65.0 54.2 44.7 36.4 29.1 22.6 18.4 13.6 7.2 3.1 -2.3 -8.1 -13.5 -20.8 -29.0 -37.4 -45.7 -56.0 -66.0 MAG .630 .630 .632 .627 .599 .564 .534 .492 .455 .430 .416 .405 .394 .377 .361 .340 .332 .336 .334 .337 .333 .328 .320 S22 ANG -1.2 -2.8 -7.0 -13.9 -26.9 -39.1 -49.8 -60.2 -69.9 -79.5 -88.6 -97.2 -106.0 -114.7 -125.2 -137.0 -149.2 -161.8 -174.8 171.2 156.8 139.7 121.8 K 0.05 0.02 0.04 0.14 0.25 0.36 0.47 0.59 0.70 0.79 0.85 0.90 0.96 1.00 1.04 1.04 1.04 1.03 1.03 1.01 0.99 0.96 0.96 S21 (dB) 15.1 15.1 15.1 15.0 14.7 14.2 13.5 12.8 12.2 11.5 10.9 10.3 9.9 9.5 9.1 8.8 8.5 8.2 8.0 7.7 7.4 7.2 6.9 MAG1 (dB) 34.6 31.5 27.1 24.1 21.2 19.6 18.2 17.4 16.7 16.0 15.4 14.9 14.4 13.7 12.3 11.9 11.5 11.4 11.1 11.0 11.4 11.2 11.0 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE33284A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) VDS = 2 V, IDS = 20 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG .999 .999 .995 .977 .919 .847 .769 .693 .625 .574 .533 .496 .455 .414 .391 .387 .384 .369 .364 .368 .400 .434 .468 ANG -2.0 -4.3 -11.2 -22.7 -43.9 -63.8 -81.5 -97.9 -113.5 -128.4 -141.7 -153.9 -167.0 178.7 162.5 145.8 131.2 114.7 95.6 75.8 59.4 47.6 32.4 MAG 7.099 7.053 7.053 6.935 6.540 6.026 5.485 4.991 4.558 4.181 3.865 3.614 3.423 3.256 3.098 2.975 2.873 2.783 2.713 2.622 2.529 2.459 2.386 S21 ANG 178.3 175.9 169.4 158.7 138.8 120.3 103.9 89.0 75.2 61.9 50.4 38.7 27.0 15.8 4.2 -7.1 -17.9 -29.9 -42.0 -54.7 -66.7 -78.7 -92.0 MAG .002 .004 .010 .019 .037 .051 .064 .074 .082 .090 .099 .107 .116 .126 .133 .141 .149 .160 .165 .175 .181 .182 .185 S12 ANG 89.3 88.4 83.2 76.7 67.0 57.5 48.6 41.5 35.3 29.7 24.7 19.6 13.8 8.2 2.2 -4.6 -10.8 -18.3 -27.1 -35.5 -44.9 -55.1 -65.8 MAG .536 .536 .536 .532 .506 .473 .446 .412 .382 .360 .353 .347 .341 .327 .315 .293 .288 .290 .289 .289 .286 .280 .275 S22 ANG -1.2 -2.7 -7.0 -13.9 -26.3 -38.2 -47.9 -57.4 -66.2 -75.7 -83.9 -91.9 -100.7 -109.0 -119.4 -131.7 -144.0 -156.5 -170.3 174.4 158.9 140.9 122.3 K S21 (dB) MAG1 (dB) 35.5 32.5 28.5 25.6 22.5 20.7 19.3 18.3 17.4 16.7 15.9 15.3 14.7 13.4 12.6 12.1 12.0 12.0 11.6 11.8 11.4 11.3 11.1 0.05 0.03 0.08 0.17 0.31 0.44 0.57 0.69 0.80 0.87 0.91 0.95 0.98 1.01 1.03 1.03 1.02 1.01 1.01 0.99 0.97 0.96 0.95 17.0 17.0 17.0 16.8 16.3 15.6 14.9 14.0 13.2 12.4 11.7 11.2 10.7 10.2 9.8 9.5 9.2 8.9 8.7 8.4 8.1 7.8 7.5 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain OUTLINE DIMENSIONS (Units in mm) NE33284A PACKAGE OUTLINE 84AS 1.78 ± 0.2 ORDERING INFORMATION1 S PART NUMBER NE33284AS NE33284A-T1 AVAILABILITY Bulk up to 1K 1K/Reel PACKAGE 84AS 84AS 1.78 ± 0.2 D U S G 0.5 ± 0.1 (ALL LEADS) Note: Long leaded (1.7 mm min.) 84ASL package available upon request in bulk quantities up to 1000 pcs. To order specify NE33284A-SL. 1.0 ±0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. NE33284A NE33284A LINEAR MODEL SCHEMATIC 0.001 CGD_PKG RG_PKG LG_PKG LG GATE 0.5 0.28 0.5 CHIP RG CDG 0.04 CGS 0.22 CDC 0.05 RI 0.52 g t f=281GHz RDS RD 0.24 LD 0.13 LD_PKG 0.3 RD_PKG DRAIN 0.2 0.16 GGS 1e_5 CCG_PKG 0.14 CDS 0.05 CCD_PKG 0.1 RS 0.19 LS_PKG 0.12 RS_PKG 0.2 0.01 CSG_PKG CSD_PKG SOURCE 0.01 BIAS DEPENDENT MODEL PARAMETERS Parameters g t RDS 2 V, 10 mA 73 mS 5 pSec 210 ohms 2 V, 20 mA 97 mS 5 pSec 156 ohms 2 V, 30 mA 104 mS 5.5 pSec 140 ohms UNITS Parameter capacitance inductance resistance conductance Units picofarads nanohenries ohms millisiemans MODEL RANGE Frequency: Bias: Date: 0.1 to 20 GHz VDS = 2 V, ID = 10, 20, 30 mA 7/2/96 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE