NE425S01-T1B

PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz Noise Figure, NF (dB) NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA • GATE LENGTH: ≤ 0.20 µm • GATE WIDTH: 200 µm • LOW COST PLASTIC PACKAGE Ga 16 1.0 12 DESCRIPTION The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 0.5 NF 0 1 2 4 6 8 10 14 20 8 4 30 Frequency, f (GHz) RECOMMENDED OPERATING CONDITIONS (TA = 25°C) SYMBOLS VDS ID Pin CHARACTERISTICS Drain to Source Voltage Drain Current Input Power UNITS MIN TYP MAX V mA dBm 2 10 3 20 0 ELECTRICAL CHARACTERISTICS (TA = 25°C) NE425S01 S01 UNITS dB dB mS mA V µA 10.5 45 20 -0.2 MIN TYP 0.60 12.0 60 60 -0.7 0.5 90 -2.0 10 MAX 0.80 PART NUMBER PACKAGE OUTLINE SYMBOLS NF1 GA1 gm IDSS VGS(off) IGSO PARAMETERS AND CONDITIONS Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz Transconductance, VDS = 2 V, ID = 10 mA Saturated Drain Current, VDS = 2 V, VGS = 0 V Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA Gate to Source Leak Current, VGS = -3 V Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories Associated Gain, GA (dB) • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz 20 NE425S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGS ID IG PT TCH Tstg PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature UNITS V V mA µA mW °C °C RATINGS 4.0 -3.0 IDSS 100 165 125 -65 to +125 Noise Figure, NF (dB) VDS = 2V f = 12 GHz 14 Ga 13 12 2.0 1.5 1.0 0.5 NF 0 10 20 30 11 10 NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT Note: 1. Operation in excess of any one of these parameters may result in permanent damage. Drain Current, ID (mA) TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Total Power Dissipation, PT (mW) Drain Current, ID (mA) 200 80 VGS = 0 V 60 -0.2 V 150 100 40 -0.4 V 20 -0.6 V -0.8 V 50 0 50 100 150 200 250 0 1.5 3.0 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, IS21Sl2 (dB) MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 24 VDS = 2 V VDS = 2 V ID = 10 mA 20 MSG. MAG. 16 Drain Current, ID (mA) 60 40 12 IS21sl 2 20 8 0 -2.0 -1.0 0 4 1 2 4 6 8 10 14 20 30 Gate to Source Voltage, VGS (V) Frequency, f (GHz) Associated Gain, GA (dB) NE425S01 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) .8 .6 .4 1 90˚ 1.5 2 135˚ S11 18 GHz 3 4 5 10 20 10 20 45˚ .2 S22 18 GHz .2 .4 .6 .8 1 1.5 2 S22 0.5 GHz 3 45 S12 0.5 GHz S11 0.5 GHz 0 180˚ -20 -10 -.2 -3 -.4 -2 -.6 -.8 -1 -1.5 -5 -4 S21 0.5 GHz 1.000 2.000 3.000 0.025 0.050 0˚ 225˚ 4.000 S12 S21 18 GHz 18 GHz 315˚ Coordinates in Ohms Frequency in GHz VDS = 2 V, IDS = 10 mA 270˚ VDS = 2 V, ID = 10 mA FREQUENCY (GHz) 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 14.00 15.00 16.00 17.00 18.00 Note: 1. Gain Calculation: MAG = |S21| |S12| S11 MAG 0.998 0.991 0.983 0.973 0.963 0.952 0.936 0.918 0.896 0.864 0.830 0.796 0.762 0.731 0.703 0.675 0.647 0.624 0.597 0.571 0.536 0.501 0.474 0.454 0.440 0.432 0.430 0.442 0.466 0.514 0.592 ANG -6.25 -12.36 -18.30 -24.28 -30.28 -36.31 -42.52 -48.91 -55.17 -61.77 -68.21 -74.65 -81.27 -87.80 -94.41 -101.21 -107.84 -114.92 -122.27 -130.41 -138.75 -147.71 -157.02 -167.49 -178.22 170.87 149.21 127.80 106.73 87.16 69.36 MAG 4.353 4.325 4.304 4.300 4.268 4.253 4.228 4.205 4.159 4.099 4.038 3.970 3.888 3.825 3.769 3.708 3.660 3.623 3.586 3.532 3.484 3.434 3.329 3.263 3.208 3.156 3.051 2.924 2.770 2.610 2.457 S21 ANG 172.87 166.07 159.56 152.97 146.39 139.87 133.14 126.39 119.62 112.65 105.96 99.70 93.42 87.11 81.02 75.10 68.76 62.69 56.50 49.97 43.60 37.56 31.21 25.00 18.95 13.02 -0.17 -13.75 -27.29 -40.28 -53.68 MAG 0.006 0.013 0.019 0.025 0.030 0.036 0.042 0.047 0.052 0.056 0.060 0.064 0.067 0.070 0.073 0.076 0.078 0.081 0.083 0.085 0.088 0.089 0.091 0.092 0.093 0.094 0.096 0.098 0.099 0.100 0.100 S12 ANG 85.38 81.34 77.34 73.13 68.91 65.00 60.80 56.72 52.48 48.56 44.48 40.77 37.05 33.52 30.04 26.89 23.80 20.66 17.61 14.41 11.15 7.98 4.74 1.38 -1.63 -4.93 -11.35 -18.32 -25.93 -33.90 -41.97 MAG 0.581 0.577 0.571 0.565 0.556 0.546 0.535 0.522 0.506 0.487 0.466 0.445 0.424 0.404 0.384 0.367 0.351 0.334 0.317 0.296 0.275 0.249 0.222 0.196 0.169 0.146 0.115 0.103 0.119 0.166 0.236 S22 ANG -4.35 -8.60 -12.75 -16.87 -21.01 -25.10 -29.22 -33.29 -37.48 -41.54 -45.70 -49.87 -53.98 -58.13 -62.07 -66.26 -70.16 -73.96 -77.74 -81.66 -85.75 -90.60 -96.41 -102.92 -111.44 -122.20 -149.45 175.83 137.09 105.34 85.49 K MAG1 (dB) 28.606 25.220 23.551 22.355 21.531 20.724 20.029 19.517 19.030 18.645 18.280 17.926 17.637 17.375 17.129 16.883 15.596 14.973 14.357 13.796 13.247 12.728 12.179 11.816 11.536 11.314 10.957 10.603 10.216 9.963 10.061 0.075 0.151 0.200 0.249 0.292 0.325 0.376 0.427 0.489 0.576 0.662 0.736 0.815 0.879 0.933 0.979 1.033 1.063 1.108 1.155 1.204 1.272 1.333 1.381 1.417 1.442 1.471 1.491 1.519 1.506 1.418 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE425S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 0.69nH 6 ohms CGS_PKG 0.07pF Lsx 0.07nH Rsx 0.06 ohms CDS_PKG 0.05PF Q1 0.6nH Rdx 6 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.8 0 8 0.103 0.092 0.08 2 1 0.715 3e-13 1.22 0 0 4e-12 0.13e-12 5000 1e-9 0.3e-12 0.02e-12 0.3 0.1 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 3 2 2 0 0 1 27 3 1.43 0 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 30 mA IDSS = 59.9 ma @ VGS = 0, VDS = 2 V Date: 2/98 (1) Series IV Libra TOM Model NE425S01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S01 2.0 ± 0.2 TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 2 V, ID = 10 mA FREQ. (GHz) 2 4 6 8 10 12 2.0 ± 0.2 0.5 TYP. NFMIN (dB) 0.31 0.34 0.40 0.45 0.52 0.60 0.72 0.86 1.00 GA (dB) 18.35 16.31 14.56 13.28 12.33 11.11 10.40 9.86 9.63 ΓOPT MAG 0.93 0.80 0.65 0.49 0.36 0.27 0.24 0.30 0.47 ANG 14 29 48 72 102 139 -176 -122 -58 Rn/50 0.38 0.33 0.25 0.18 0.11 0.08 0.07 0.10 0.22 0 2. 1 ± 2 0. 2 G 3 0.65 TYP. 1.9 ± 0.2 1.6 14 16 18 4 0.125 ± 0.05 0.4 MAX 4.0 ± 0.2 ORDERING INFORMATION PART NUMBER NE425S01 NE425S01-T1 NE425S01-T1B SUPPLY FORM Bulk Tape & Reel 1000 pcs./reel Tape & Reel 4000 pcs./reel PACKAGE OUTLINE S01 S01 S01 EXCLUSIVE NORTH AMERICAN AGENT FOR 1.5 MAX 1. 2. 3. 4. Source Drain Source Gate RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE