NE434S01-T1

PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET FEATURES • VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, |S21S|2 (dB) NE434S01 MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA 20 MSG. • HIGH ASSOCIATED GAIN: 15.5 dB TYP at 4 GHz • GATE WIDTH: 280 µm • TAPE & REEL PACKAGING OPTION AVAILABLE • LOW COST PLASTIC PACKAGE 16 |S21S|2 MAG. 12 DESCRIPTION The NE434S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and other commercial systems. 8 4 1 2 4 6 8 10 14 20 30 Frequency, f (GHz) RECOMMENDED OPERATING CONDITIONS SYMBOLS VDS ID PIN CHARACTERISTIC Drain to Source Voltage Drain Current Input Power (TA = 25°C) UNITS MIN TYP MAX V mA dBM 2 15 2.5 20 0 ELECTRICAL CHARACTERISTICS (TA = 25°C) NE434S01 S01 UNITS µA mA V mS dB dB 13.0 20 -0.2 70 MIN TYP 0.5 80 -0.9 85 0.35 15.5 0.45 MAX 10 150 -2.5 PART NUMBER PACKAGE OUTLINE SYMBOLS IGSO IDSS VGS(off) gm NF1 GA1 PARAMETERS AND CONDITIONS Gate to Source Leak Current, VGS = -3.0 V Saturated Drain Current, VDS = 2.0 V, VGS = 0 V Gate to Source Cutoff Voltage, VDS = 2.0 V, ID = 100 µA, Transconductance, VDS = 2.0 V, ID = 14 mA Noise Figure, VDS = 2.0 V, ID = 15 mA, f = 4 GHz Associated Gain, VDS = 2.0 V, ID = 15 mA, f = 4 GHz Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories NE434S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGS IDS TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA °C °C mW RATINGS 4.0 -3.0 IDSS 125 -65 to +125 300 TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 2 V, IDS = 15 mA FREQ. (GHz) 2 4 6 8 10 12 14 16 18 NFMIN (dB) 0.32 0.35 0.40 0.46 0.56 0.67 0.80 0.94 1.10 GA (dB) 16.5 15.5 14.2 13.1 12.0 10.9 9.9 8.9 8.0 ΓOPT MAG 0.77 0.58 0.43 0.32 0.27 0.27 0.34 0.48 0.69 ANG 15 43 82 127 175 -139 -100 -70 -56 Rn/50 0.19 0.18 0.13 0.08 0.07 0.10 0.17 0.29 0.46 Note: 1. Operation in excess of any one of these conditions may result in permanent damage. TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 500 (TA = 25°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE Total Power Dissipation, PT (mW) VDS = 2 V 400 Drain Current, IDS (mA) 60 300 40 200 20 100 0 0 50 100 150 200 250 -2.0 -1.0 0 Ambient Temperature, TA (°C) Gate to Source Voltage, VGS (V) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V 100 Drain Current, IDS (mA) 80 -0.2 V 60 -0.4 V 40 20 -0.6 V 0 1 2 3 4 5 Drain to Source Voltage, VDS (V) NE434S01 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) 1.0 0.5 2.0 +90° +135° +45° 18 GHz 18 GHz S21 2 GHz 18 GHz 0 ∞ S22 2 GHz S11 2 GHz -0.5 -1.0 -2.0 +180° 18 GHz 0 Coordinates in Ohms Frequency in GHz VDS = 2 V, IDS = 15 mA S12 2 GHz -135° -90° -45° VDS = 2 V, IDS = 15 mA FREQUENCY (GHz) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 S11 MAG .998 .927 .860 .829 .802 .716 .659 .601 .592 .550 .514 .488 .464 .463 .468 .472 .472 .476 .476 .488 .518 .552 .593 .635 .661 .688 .707 .719 .730 .752 .771 .803 .817 ANG -41.7 -47.5 -61.3 -69.9 -79.2 -87.5 -93.9 -99.7 -108.5 -118.5 -130.2 -144.5 -158.9 -171.7 176.6 166.4 156.2 147.0 137.8 127.7 118.1 109.6 101.9 95.2 90.1 86.1 82.2 79.7 76.1 71.3 65.5 60.4 55.7 MAG 7.162 6.856 6.603 6.305 6.033 5.687 5.415 5.184 5.050 4.912 4.774 4.600 4.401 4.187 3.997 3.812 3.628 3.477 3.351 3.251 3.150 3.036 2.875 2.714 2.546 2.418 2.327 2.240 2.168 2.100 2.021 1.930 1.814 S21 ANG 140.1 133.6 122.0 114.4 106.8 98.5 91.6 84.7 77.6 70.5 63.0 55.4 47.9 41.0 34.1 27.7 21.5 15.6 9.6 3.5 -2.9 -9.7 -16.4 -22.7 -28.1 -32.6 -37.0 -41.8 -46.8 -52.7 -58.4 -65.1 -70.5 MAG .042 .050 .057 .064 .071 .075 .081 .085 .091 .096 .102 .107 .109 .113 .114 .118 .119 .122 .124 .125 .128 .130 .131 .129 .126 .124 .127 .126 .129 .131 .130 .134 .128 S12 ANG 68.4 65.9 57.5 54.1 49.6 45.8 41.1 38.9 35.2 30.8 27.3 22.0 18.6 14.9 11.5 7.7 4.7 1.0 -2.5 -5.8 -9.2 -12.9 -16.7 -21.2 -22.5 -24.9 -27.4 -28.8 -31.6 -33.2 -38.5 -42.2 -44.3 MAG .415 .479 .423 .429 .426 .406 .394 .374 .340 .311 .279 .232 .189 .155 .134 .121 .111 .103 .098 .093 .105 .131 .177 .223 .259 .284 .316 .332 .352 .380 .398 .422 .445 S22 ANG -27.5 -35.8 -43.0 -47.9 -51.7 -56.2 -59.7 -63.3 -68.1 -73.0 -79.1 -87.5 -97.7 -109.3 -126.9 -142.8 -156.2 -170.1 174.4 157.9 137.6 121.0 107.0 97.8 91.0 87.0 86.0 83.3 81.7 77.4 72.4 66.5 62.9 .10 .23 .39 .42 .45 .60 .69 .78 .79 .84 .87 .91 .96 .98 1.00 1.02 1.06 1.08 1.10 1.12 1.10 1.08 1.07 1.06 1.08 1.08 1.05 1.04 1.01 .98 .96 .89 .91 K MAG1 (dB) 41.82 26.36 23.09 21.91 20.95 19.00 17.88 16.89 16.47 15.83 15.26 14.68 14.08 13.59 15.01 14.21 13.37 12.86 12.36 12.06 11.98 11.92 11.79 11.70 11.29 11.17 11.30 11.20 11.55 10.74 10.78 11.05 10.92 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE434S01 NE434S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 0.72nH 3 ohms CGS_PKG 0.05pF Lsx 0.07nH Rsx 0.06 ohms CDS_PKG 0.06PF Q1 0.62nH Rdx 3 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -0.806 0 8 0.121 0.085 0.067 2.2 0 0.5 1e-14 1 0 0 7e-12 0.12e-12 5000 1e-9 0.42e-12 0.04e-12 0.3 0.25 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 0.2 1 1 0 0 1 27 3 1.43 0 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 20 mA Date: 6/98 (1) Series IV Libra TOM Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. NE434S01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S01 2.0 ± 0.2 TYPICAL MOUNT PAD LAYOUT (Units in mm) 1 2.4 mm TYP. 0. 2 2. 0 ± E 3 0.65 TYP. 1.9 ± 0.2 1.6 4 1. Source 2. Drain 3. Source 4. Gate 1.5 MAX 0.125 ± 0.05 0.4 MAX 4.0 ± 0.2 ORDERING INFORMATION PART NUMBER NE434S01 NE434S01-T1 NE434S01-T1B AVAILABILITY Bulk Tape & reel 1K/reel Tape & reel 4K/reel PACKAGE S01 S01 S01 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE 2.4 mm TYP. 2.0 ± 0.2 0.5 TYP. 2