NE5511279A

NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES • HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V, • HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP., f = 900 MHz, VDS = 7.5 V, 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Source 1.5±0.2 Source 21001 4.4 MAX. GL = 18.5 dB TYP., f = 460 MHz, VDS = 7.5 V, • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX • SINGLE SUPPLY: VDS = 2.8 to 8.0 V 0.4±0.15 5.7 MAX. 0.8 MAX. 3.6±0.2 W • HIGH LINEAR GAIN: GL = 15.0 dB TYP., f = 900 MHz, VDS = 7.5 V, APPLICATIONS • UHF RADIO SYSTEMS • CELLULAR REPEATERS • TWO-WAY RADIOS • FRS/GMRS • FIXED WIRELESS DESCRIPTION NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using NEC's NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz using a 7.5 V supply voltage. (TA = 25°C) MIN 38.5 − 42 − − − − − − − 1.0 − − 20 TYP 40.0 2.5 48 15.0 40.5 2.75 50 18.5 − − 1.5 5 2.3 24 MAX − − − − − − − − 100 100 2.0 − − − UNIT dBm A % dB dBm A % dB nA nA V °C/W S V TEST CONDITIONS f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDSQ = 400 mA (RF OFF) Pin = 5 dBm f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDSQ = 400 mA (RF OFF) Pin = 5 dBm VGS = 6.0 V VDS = 8.5 V VDS = 4.8 V, IDS = 1.5 mA Channel to Case VDS = 3.5 V, IDS = 900 mA IDSS = 15 µA ELECTRICAL CHARACTERISTICS SYMBOL Pout ID ηadd GL Pout ID ηadd GL IGSS IDSS Vth Rth gm BVDSS PARAMETER Output Power Drain Current Power Added Efficiency Linear Gain Output Power Drain Current Power Added Efficiency Linear Gain Gate to Source Leak Current Drain to Source Leakage Current (Zero Gate Voltage Drain Current) Gate Threshold Voltage Thermal Resistance Transconductance Drain to Source Breakdown Voltage Notes: DC performance is 100% tested. RF performance is tested on several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. 0.9±0.2 California Eastern Laboratories 0.2±0.1 0.8±0.15 1.0 MAX. ηadd = 50% TYP., f = 460 MHz, VDS = 7.5 V, 3 Gate Drain Gate Drain NE5511279A ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS VDS VGS ID PTOT TCH TSTG PARAMETERS Drain Supply Voltage Gate Supply Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature 2 RECOMMENDED OPERATING LIMITS SYMBOLS VDS VGS IDS PIN PARAMETERS Drain to Source Voltage Gate Supply Voltage Drain Current1 Input Power f = 900 MHz, VDS = 7.5 V UNITS V V A dBm TYP 7.5 2.0 2.5 27 MAX 8.0 3.0 3.0 30 UNITS V V A W °C °C RATINGS 20.0 6.0 3.0 20 125 -55 to +125 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. VDS must be used under 12 V on RF operation. P.C.B. LAYOUT (Units in mm) 79A PACKAGE 4.0 1.7 Source ORDERING INFORMATION PART NUMBER NE5511279A-T1 QTY • 12 mm wide embossed taping. • Gate pin faces the perforation side of the tape. • 1 Kpcs/Reel • 12 mm wide embossed taping. • Gate pin faces the perforation side of the tape. • 5 Kpcs/Reel NE5511279A-T1A Gate 5.9 1.0 Drain 1.2 0.5 Through hole φ 0.2 × 33 0.5 6.1 0.5 Note: Use rosin or other material to prevent solder from penetrating through-holes. TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT, ηd, ηadd vs. INPUT POWER 45 5 (TA = 25°C) OUTPUT POWER, DRAIN CURRENT, ηd, ηadd vs. INPUT POWER 45 5 f = 900 MHz Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) Output Power, Pout (dBm) Output Power, Pout (dBm) 40 IDS 35 ηd 4 100 40 IDS 35 ηd 4 100 3 75 3 75 30 ηadd 2 50 30 ηadd 2 50 25 1 25 25 1 25 20 10 15 20 25 30 0 35 0 20 10 15 20 25 30 0 35 0 Input Power,Pin (dBm) Input Power,Pin (dBm) Drain Efficiency, ηd (%) Power Added Efficiency, ηadd (%) Pout f = 460 MHz Pout Drain to Source Current, IDS (A) Drain to Source Current, IDS (A) NE5511279A RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Soldering Conditions Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) Peak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below Condition Symbol IR260 VPS VP215 Wave Soldering WS260 Partial Heating HS350-P3 Caution Do not use different soldering methods together (except for partial heating). Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 08/26/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd.