NE68939-T1

PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE68939 NE68939 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 ± 0.2 0.95 0.85 2 3 1.9 1 4 DESCRIPTION The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX driver stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel. The NE68939 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. +0.10 0.6 -0.05 1) Collector 2) Emitter 3) Base 4) Emitter +0.2 1.1 -0.1 0.8 0.16 +0.10 -0.06 5˚ 0 to 0.1 5˚ ELECTRICAL CHARACTERISTICS (TA = 25 °C) PART NUMBER PACKAGE CODE SYMBOLS ICBO IEBO hFE P-1 Gp PARAMETERS Collector Cutoff Current, VCB = 5 V, IE = 0 Emitter Cutoff Current, VEB = 1 V, IC = 0 DC Current Gain, VCE = 3.6 V, IC = 100 mA Output Power Power Gain Collector Efficiency VCE = 3.6 V, f = 1.9 GHZ ICq = 2 mA (Class AB) Duty 1/8 dBm dB % MS 6.5 50 UNITS µA µA 30 24.5 8 62 10.0 MIN NE68939 39 TYP MAX 2.5 2.5 ηC TON Maximum Device On Time California Eastern Laboratories NE68939 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C) SYMBOLS VCBO VCEO VEBO IC PT Tj TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current mA Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V 150 mW °C °C 200 (CW) 150 -65 to +150 1.9 RATINGS 9.0 6.0 2.0 OUTLINE 39 RECOMMENDED P.C.B. LAYOUT 2.4 2 3 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 1 4 1.0 1.0 APPLICATION (1) TX Amplifier for DECT +3 dBm Po = 27 dBm ORDERING INFORMATION PART NUMBER NE68939-T1 Note: 1. Lead material: Cu Lead plating: PbSn QTY 3K/REEL NE68839 NE68939 NE69039 (2) TX Amplifier for PHS -14 dBm P1 = 22 dBm ZIN (Ω), ZOUT (Ω) DATA j50 µPC2771T NE68939 NE69039 j25 j100 OUTPUT POWER, COLLECTOR EFFICIENCY, COLLECTOR CURRENT AND POWER GAIN VS. INPUT POWER 30 f = 1.9 GHZ, VCC = 3.6V IC = 1mA (Duty 1/8) 25 Pout 20 ηC 15 IC 10 GP 5 j10 ZIN 0 0 Collector Efficency, ηC (%) ZOUT Output Power, Pout (dBm) 80 Collector Currents, IC (mA) -j10 60 40 20 0 8 7 6 5 4 -j25 -j50 -j100 Power Gain, Gp (dB) 30 20 10 0 Z OUT Z IN 5 10 15 20 25 Input Power, Pin (dBm) TYPICAL DATA f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8 P1dB ηC IC GL 24.5 62 15 9.0 dbm % mA db IMPEDANCE LOOKING INTO DEVICE VCC = 3.6 V, ICQ = I mA, CLASS AB FREQUENCY (GHZ) 1.9 0.9 ZIN (Ω) 7.85+j5.62 3.1+j11.6 ZOUT (Ω) 21.9-j11.6 5.3-j5.7 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 07/05/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE