PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
• OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE69039
NE69039
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
+0.2 2.8 -0.3 +0.2 1.5 -0.1
+0.10 0.4 -0.05 (LEADS 2, 3, 4)
2.9 ± 0.2 0.95 0.85
2
3 1.9
1
4
DESCRIPTION
The NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX output stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel. The NE69039 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance.
+0.2 1.1 -0.1
+0.10 0.6 -0.05
1) Collector 2) Emitter 3) Base 4) Emitter
0.8
0.16 +0.10 -0.06
5˚ 0 to 0.1
5˚
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PART NUMBER PACKAGE CODE SYMBOLS ICBO IEBO hFE P-1 GP PARAMETERS Collector Cutoff Current, VCB = 5 V, IE = 0 Emitter Cutoff Current, VEB = 1 V, IC = 0 DC Current Gain, VCE = 3.6 V, IC = 100 mA Output Power Power Gain Collector Efficiency VCE = 3.6 V, f = 1.9 GHZ ICq = 1 mA (Class AB) Duty 1/8 dBm dB % MS 5.0 50 UNITS µA µA 30 27.5 6.0 72 10.0 MIN NE69039 39 TYP MAX 2.5 2.5
ηC
TON
Maximum Device On Time
California Eastern Laboratories
NE69039 ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS VCBO VCEO VEBO IC PT Tj TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW °C °C RATINGS 9.0 6.0 2.0 300 200 (CW) 150 -65 to +150
1.9 2 3
OUTLINE 39 RECOMMENDED P.C.B. LAYOUT
2.4
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
1 4 1.0
1.0
APPLICATION
(1) TX Amplifier for DECT
+3 dBm Po = 27 dBm
ORDERING INFORMATION
PART NUMBER NE69039-T1 Note: 1. Lead material: Cu Lead plating: PbSn QTY 3K/REEL
NE68839
NE68939
NE69039
(2) TX Amplifier for PHS
-14 dBm P1 = 22 dBm
ZIN (Ω), ZOUT (Ω) DATA
j50
µPC2771T
NE68939
NE69039
j25
j100
OUTPUT POWER, COLLECTOR EFFICIENCY, COLLECTOR CURRENT AND POWER GAIN VS. INPUT POWER
30 f = 1.9 GHZ, VCC = 3.6V IC = 1mA (Duty 1/8)
j10
ZIN
Collector Efficency, ηC (%)
ZOUT 0 0
Output Power, Pout (dBm)
Pout 20
ηC 80 60
Collector Currents, IC (mA)
25
-j10
15 IC 10 GP 5
40 20 0 8 7 6 5 4 5 10 15 20 25
30 20 10 0
-j25 -j50
-j100
Power Gain, Gp (dB)
ZOUT ZIN
Input Power, Pin (dBm)
TYPICAL DATA f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8 P1dB ηC IC GL 27.5 72 27 6.7 dBm % mA db
IMPEDANCE LOOKING INTO DEVICE VCC = 3.6 V, ICQ = 1 mA, CLASS AB FREQUENCY (GHZ) 1.9 0.9 ZIN (Ω) 7.42+j14.2 4.0+j8.8 ZOUT (Ω) 15.8-j2.64 4.4-j4.6
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 07/06/2000
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