NE76100M

GENERAL PURPOSE GaAs MESFET FEATURES Optimum Noise Figure, NFOPT (dB) NE76100 • LOW NOISE FIGURE: NF = 0.8 dB typical at f = 4 GHz • HIGH ASSOCIATED GAIN: GA = 12.0 dB typical at f = 4 GHz • LG = 1.0 µm, WG = 400 µm NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 4 3.5 3 2.5 2 1.5 1 NF 0.5 0 1 10 20 3 0 24 21 18 15 12 9 6 Ga DESCRIPTION NE76100 is a high performance gallium arsenide metal semiconductor field effect transistor chip. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. The NE76100 is suitable for a wide variety of commercial and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT GA1 P1dB 1 NE76100 00 (CHIP) UNITS dB dB dBm dBm dB dB mA V mS µA °C/W 30 -3.0 20 MIN TYP 0.8 12.0 12.5 15.0 11.5 13.5 60 -1.1 45 1.0 10 190 100 -0.5 MAX 1.4 PARAMETERS AND CONDITIONS Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz Associated Gain at VDS = 3 V, ID = 10 mA, f = 4 GHz Output Power at 1 dB Gain Compression Point, f = 4 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA Gain at P1dB, f = 4 GHz VDS = 3 V, IDS = 10 mA VDS = 3 V, IDS = 30 mA Saturated Drain Current at VDS = 3 V, VGS = 0 Pinch Off Voltage at VDS = 3 V, ID = 100 mA Transconductance at VDS = 3 V, ID = 10 mA Gate to Source Leak Current at VGS = -5 V Thermal Resistance G1dB IDSS VP gm IGSO RTH2 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on an infinite heat sink. California Eastern Laboratories Associated Gain, GA (dB) NE76100 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VDS VGD VGS IDS TCH TSTG PT2 PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V V mA °C °C mW RATINGS 5 -6 -5 IDSS 175 -65 to +175 350 TYPICAL NOISE PARAMETERS (TA = 25°C) VDS = 3 V, IDS = 10 mA FREQ. (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 NFOPT (dB) 0.55 0.60 0.80 1.15 1.60 2.10 2.60 GA (dB) 18.0 15.0 12.0 10.0 8.5 7.5 7.0 MAG 0.90 0.82 0.70 0.60 0.52 0.50 0.50 ΓOPT ANG 16 34 65 95 122 150 171 Rn/50 0.50 0.48 0.45 0.39 0.38 0.32 0.27 Notes: 1. Operation in excess of anyone of these parameters may result in permanent damage. 2. Mounted on an infinite heat sink. Includes effects from wirebonds. See S-Parameter data for details. TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 3 V, f = 4 GHz 2.5 GA 15 14 13 12 1.5 NF 10 1 9 8 0.5 7 0 10 20 30 40 50 60 11 Total Power Dissipation, PT (mW) 350 250 200 150 100 50 0 0 25 50 75 100 125 Infinite Heat sink 150 175 200 Ambient Temperature, TA (°C) Noise Figure, NF (dB) 300 2 Drain Current, IDS (mA) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 75 TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 3 V 80 VGS 0 60 -0.2 40 -0.4 Transconductance, gm (mS) Drain Current, IDS (mA) 60 45 30 20 -0.6 -0.8 -1.0 0 1 2 3 4 5 15 0 0 0 20 40 60 80 100 Drain to Source Voltage, VDS (V) Drain Current, IDS (mA) Associated Gain, GA (dB) NE76100 TYPICAL SCATTERING PARAMETERS2 (TA = 25°C) j50 j25 S11 20 GHz j10 S11 .1 GHz S12 .1 GHz S21 .1 GHz 1 S21 20 GHz +90˚ j100 +120˚ +60˚ +150˚ +30˚ 0 10 25 50 100 S22 .1 GHz +180˚ – S12 20 GHz 0˚ -j10 S22 20 GHz -150˚ 2 3 4 -30˚ -j25 -j50 -j100 -120˚ 5 -90˚ -60˚ VDS = 3 V, lDS = 10 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG 0.99 0.999 0.996 0.986 0.971 0.951 0.905 0.859 0.818 0.784 0.759 0.739 0.726 0.718 0.713 0.711 0.712 0.715 0.719 0.725 0.732 0.739 0.747 0.755 S11 ANG -2.3 -4.5 -11.3 -22.5 -33.3 -43.9 -63.6 -81.4 -97.3 -111.4 -124.2 -135.6 -146.0 -155.4 -164.0 -172.0 -179.3 173.9 167.5 161.6 156.1 150.9 146.0 141.4 MAG 3.782 3.779 3.763 3.707 3.619 3.505 3.233 2.941 2.662 2.411 2.190 1.999 1.833 1.688 1.562 1.449 1.349 1.259 1.177 1.102 1.033 0.968 0.908 0.851 S21 ANG 178.2 176.3 170.9 161.9 153.1 144.7 128.9 114.6 101.9 90.3 79.8 70.1 61.1 52.7 44.7 37.2 29.9 23.0 16.4 10.0 3.8 -2.1 -7.8 -13.4 MAG 0.004 0.007 0.018 0.036 0.053 0.068 0.093 0.112 0.126 0.135 0.141 0.145 0.148 0.149 0.149 0.149 0.148 0.147 0.146 0.144 0.142 0.141 0.139 0.138 S12 ANG 86.7 86.4 83.1 76.9 70.8 65.0 54.5 45.5 37.9 31.5 26.1 21.6 17.7 14.3 11.4 8.8 6.7 4.8 3.2 1.8 0.7 -0.2 -0.9 -1.5 MAG 0.769 0.769 0.767 0.759 0.747 0.731 0.694 0.657 0.624 0.598 0.577 0.562 0.552 0.547 0.545 0.545 0.548 0.554 0.561 0.569 0.579 0.589 0.601 0.613 S22 ANG -1.2 -2.3 -5.7 -11.4 16.8 -22.0 -31.5 -39.7 -46.8 -53.1 -58.9 -64.2 -69.3 -74.2 -79.0 -83.7 -88.3 -92.9 -97.5 -102.1 -106.7 -111.2 -115.7 -120.1 0.052 0.037 0.045 0.076 0.110 0.145 0.214 0.281 0.347 0.410 0.470 0.526 0.578 0.626 0.669 0.708 0.741 0.770 0.793 0.811 0.824 0.831 0.833 0.830 K S21 (dB) 11.6 11.5 11.5 11.2 11.4 10.9 10.2 9.4 8.5 7.6 6.8 6.0 5.3 4.5 3.9 3.2 2.6 2.0 1.4 0.8 0.3 -0.3 -0.8 -1.4 MAG1 (dB) 30.1 27.1 23.1 18.4 20.1 17.1 15.4 14.2 13.3 12.5 11.9 11.4 10.9 10.5 10.2 9.9 9.6 9.3 9.1 8.8 8.6 8.4 8.1 7.9 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. S-parameters include bond wires as follows: GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG. DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG. SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG. WIRE: 0.0007" (17.8 µm) DIA. GOLD. NE76100 TYPICAL SCATTERING PARAMETERS2 (TA = 25°C) j50 j25 S11 20 GHz j100 +90˚ +120˚ +60˚ +150˚ j10 S11 .1 GHz +30˚ 0 10 25 50 100 S22 .1 GHz +180˚ – S12 .1 GHz S21 .1 GHz 1 S21 20 GHz S12 20 GHz 0˚ -j10 S22 20 GHz 2 -150˚ 3 4 -30˚ -j25 -j50 -j100 -120˚ 5 -90˚ -60˚ VDS = 3 V, lDS = 20 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG 0.999 0.999 0.995 0.983 0.965 0.943 0.893 0.845 0.805 0.774 0.752 0.736 0.726 0.720 0.717 0.717 0.719 0.722 0.727 0.733 0.739 0.746 0.754 0.761 S11 ANG -2.5 -5.1 -12.7 -25.2 -37.3 -48.8 -70.1 -88.8 -105.2 -119.5 -132.1 -143.3 -153.3 -162.3 -170.6 -178.1 174.9 168.5 162.5 156.9 151.6 146.7 142.1 137.7 S21 MAG 4.692 4.668 4.662 4.572 4.435 4.261 3.860 3.451 3.078 2.754 2.477 2.242 2.042 1.870 1.722 1.592 1.477 1.374 1.282 1.197 1.120 1.049 0.983 0.921 ANG 178.0 176.1 170.3 160.7 151.5 142.6 126.5 112.3 99.7 88.6 78.5 69.2 60.6 52.5 44.9 37.7 30.7 24.1 17.7 11.5 5.6 -0.2 -5.7 -11.1 S12 MAG 0.003 0.007 0.017 0.033 0.048 0.061 0.083 0.098 0.109 0.117 0.122 0.125 0.127 0.129 0.130 0.131 0.131 0.131 0.131 0.131 0.131 0.131 0.132 0.132 ANG 86.5 86.2 82.7 76.2 69.8 63.8 53.3 44.7 37.8 32.2 27.7 23.9 20.8 18.2 16.1 14.2 12.7 11.4 10.3 9.4 8.6 7.9 7.4 6.9 MAG 0.713 0.712 0.710 0.701 0.686 0.669 0.629 0.592 0.560 0.536 0.519 0.507 0.500 0.497 0.497 0.500 0.505 0.511 0.519 0.529 0.539 0.551 0.563 0.575 S22 ANG -1.2 -2.5 -6.2 -12.2 -17.9 -23.3 -33.0 -41.1 -48.0 -54.1 -59.6 -64.8 -69.8 -74.7 -79.4 -84.2 -88.8 -93.5 -98.1 -102.7 -107.2 -111.7 -116.2 -120.6 K 0.053 0.038 0.047 0.081 0.117 0.154 0.227 0.299 0.368 0.434 0.496 0.554 0.606 0.654 0.696 0.732 0.762 0.787 0.805 0.816 0.823 0.823 0.818 0.808 S21 (dB) 13.4 13.4 13.4 13.2 12.9 12.6 11.7 10.8 9.8 8.8 7.9 7.0 6.2 5.4 4.7 4.0 3.4 2.8 2.2 1.6 1.0 0.4 -0.1 -0.7 MAG1 (dB) 31.4 28.4 24.4 21.4 19.7 18.4 16.7 15.4 14.5 13.7 13.1 12.5 12.0 11.6 11.2 10.9 10.5 10.2 9.9 9.6 9.3 9.0 8.7 8.4 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. S-parameters include bond wires as follows: GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG. DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG. SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG. WIRE: 0.0007" (17.8 µm) DIA. GOLD. NE76100 TYPICAL SCATTERING PARAMETERS2 (TA = 25°C) j50 j25 S11 20 GHz j10 S11 .1 GHz j100 +90˚ +120˚ +60˚ +150˚ +30˚ 0 10 25 50 100 S22 .1 GHz +180˚ – S12 .1 GHz S21 .1 GHz 1 S21 20 GHz S12 20 GHz 0˚ -j10 S22 20 GHz 2 -150˚ 3 4 -30˚ -j25 -j50 -j100 -120˚ 5 -90˚ -60˚ VDS = 3 V, lDS = 30 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 MAG 0.999 0.999 0.995 0.982 0.963 0.939 0.887 0.840 0.802 0.773 0.752 0.738 0.730 0.725 0.723 0.723 0.726 0.730 0.735 0.740 0.747 0.754 0.761 0.768 S11 ANG -2.7 -5.4 -13.4 -26.6 -39.3 -51.4 -73.4 -92.5 -109.0 -123.3 -135.8 -146.8 -156.6 -165.5 -173.5 179.1 172.4 166.1 160.3 154.8 149.7 144.9 140.4 136.1 MAG 5.142 5.137 5.104 4.995 4.827 4.619 4.146 3.676 3.256 2.896 2.594 2.340 2.125 1.941 1.783 1.646 1.524 1.417 1.320 1.232 1.151 1.077 1.009 0.945 S21 ANG 178.0 176.0 169.9 160.1 150.6 141.5 125.2 111.0 98.6 87.6 77.6 68.6 60.1 52.2 44.7 37.6 30.8 24.3 18.0 11.9 6.0 0.4 -5.1 -10.4 MAG 0.003 0.006 0.016 0.031 0.045 0.058 0.078 0.092 0.102 0.108 0.113 0.116 0.118 0.120 0.121 0.122 0.123 0.124 0.124 0.125 0.126 0.127 0.128 0.129 S12 ANG 86.5 86.1 82.5 75.7 69.2 63.2 52.7 44.4 37.8 32.6 28.5 25.1 22.4 20.2 18.4 16.8 15.6 14.5 13.6 12.9 12.2 11.7 11.2 10.8 MAG 0.694 0.693 0.690 0.680 0.665 0.647 0.606 0.569 0.538 0.516 0.500 0.490 0.485 0.483 0.484 0.487 0.493 0.500 0.508 0.518 0.529 0.541 0.553 0.566 S22 ANG -1.3 -2.5 -6.3 -12.5 -18.3 -23.7 -33.3 -41.2 -48.0 -53.9 -59.4 -64.5 -69.5 -74.3 -79.1 -83.8 -88.5 -93.2 -97.8 -102.5 -107.0 -111.6 -116.1 -120.5 0.054 0.039 0.049 0.083 0.120 0.158 0.233 0.307 0.378 0.445 0.508 0.565 0.618 0.664 0.705 0.739 0.766 0.787 0.802 0.810 0.812 0.808 0.800 0.787 K S21 (dB) 14.2 14.2 14.2 14.0 13.7 13.3 12.4 11.3 10.3 9.2 8.3 7.4 6.5 5.8 5.0 4.3 3.7 3.0 2.4 1.8 1.2 0.6 0.1 -0.5 MAG1 (dB) 32.0 29.0 25.0 22.0 20.3 19.0 17.3 16.0 15.1 14.3 13.6 13.1 12.6 12.1 11.7 11.3 10.9 10.6 10.3 9.9 9.6 9.3 9.0 8.7 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. S-parameters include bond wires as follows: GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG. DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG. SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG. WIRE: 0.0007" (17.8 µm) DIA. GOLD. NE76100 TYPICAL SCATTERING PARAMETERS2 (TA = 25°C) j50 j25 S11 20 GHz j10 S11 .1 GHz j100 +90˚ +120˚ +60˚ +150˚ +30˚ 0 10 25 50 100 S22 .1 GHz +180˚ – S12 .1 GHz S21 .1 GHz 1 S21 20 GHz S12 20 GHz 0˚ -j10 S22 20 GHz 2 -150˚ 3 4 -30˚ -j25 -j50 -j100 -120˚ 5 -90˚ -60˚ VDS = 3 V, lDS FREQUENCY (GHz) 0.1 0.2 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 = 40 mA S11 MAG 0.999 0.999 0.995 0.981 0.961 0.937 0.885 0.838 0.800 0.773 0.753 0.741 0.733 0.728 0.727 0.728 0.731 0.734 0.739 0.745 0.751 0.758 0.765 0.772 ANG -2.8 -5.6 -13.9 -27.5 -40.6 -53.0 -75.5 -94.8 -111.3 -125.6 -138.0 -148.9 -158.6 -167.3 -175.2 177.6 170.9 164.7 159.0 153.6 148.6 143.9 139.4 135.2 MAG 5.433 5.428 5.391 5.267 5.079 4.846 4.325 3.815 3.365 2.984 2.666 2.400 2.176 1.985 1.821 1.679 1.554 1.442 1.343 1.252 1.170 1.094 1.024 0.959 S21 ANG 177.9 175.9 169.7 159.6 150.0 140.8 124.4 110.2 97.8 86.9 77.1 68.1 59.8 51.9 44.5 37.5 30.7 24.3 18.0 12.0 6.2 0.5 -4.9 -10.2 MAG 0.003 0.006 0.015 0.030 0.044 0.055 0.074 0.087 0.096 0.102 0.107 0.110 0.112 0.114 0.115 0.117 0.118 0.119 0.120 0.121 0.123 0.124 0.125 0.127 S12 ANG 86.4 86.0 82.3 75.5 69.0 62.9 52.6 44.4 38.1 33.2 29.4 26.3 23.9 21.9 20.3 18.9 17.8 16.9 16.2 15.5 14.9 14.4 13.9 13.5 MAG 0.685 0.684 0.681 0.671 0.655 0.637 0.596 0.559 0.530 0.508 0.494 0.484 0.480 0.479 0.480 0.484 0.490 0.497 0.506 0.516 0.527 0.538 0.551 0.563 S22 ANG -1.3 -2.5 -6.3 -12.5 -18.3 -23.7 -33.1 -40.8 -47.4 -53.2 -58.5 -63.6 -68.6 -73.4 -78.2 -82.9 -87.7 -92.4 -97.1 -101.7 -106.3 -110.9 -115.4 -119.9 0.054 0.039 0.049 0.085 0.123 0.162 0.239 0.313 0.385 0.453 0.516 0.573 0.625 0.670 0.709 0.740 0.765 0.784 0.795 0.800 0.799 0.793 0.782 0.767 K S21 (dB) 14.7 14.7 14.6 14.4 14.1 13.7 12.7 11.6 10.5 9.5 8.5 7.6 6.8 6.0 5.2 4.5 3.8 3.2 2.6 2.0 1.4 0.8 0.2 -0.4 MAG1 (dB) 32.4 29.4 25.4 22.4 20.7 19.4 17.7 16.4 15.4 14.7 14.0 13.4 12.9 12.4 12.0 11.6 11.2 10.8 10.5 10.1 9.8 9.5 9.1 8.8 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain 2. S-parameters include bond wires as follows: GATE: TOTAL 1 WIRE(S), 1 PER BOND PAD, 0.0134" (340 µm) LONG. DRAIN: TOTAL 2 WIRE(S), 1 PER BOND PAD, 0.0188" (477 µm) LONG. SOURCE: TOTAL 4 WIRE(S), 2 PER SIDE, 0.0114" (286 µm) LONG. WIRE: 0.0007" (17.8 µm) DIA. GOLD. NE76100 NE76100 LINEAR MODEL SCHEMATIC LG 0.235 RG 1.2 GGS 1E-6 CGS CDC 0.085 CDG RD 2 LD 0.04 GATE DRAIN g t f=200GHz RDS CDS 0.079 RI 3 RS 2 LS 0.025 SOURCE BIAS DEPENDANT MODEL PARAMETERS Parameters g t RDS CGS CDG 3 V, 10 mA 48 mS 5 pSec 350 ohms 0.45 pF 0.07 pF 3 V, 20 mA 63 mS 4.5 pSec 260 ohms 0.52 pF 0.068 pF 3 V, 30 mA 70 mS 4.5 pSec 240 ohms 0.57 pF 0.065 pF 3 V, 40 mA 76 mS 4 pSec 230 ohms 0.61pF 0.061 pF UNITS Parameter capacitance inductance resistance conductance time frequency Units picofarads nanohenries ohms millisiemans picoseconds gigahertz MODEL RANGE Frequency: Bias: Date: 0.1 to 20 GHz VDS = 3 V, ID = 10, 20, 30, 40 mA 10/23/96 NE76100 OUTLINE DIMENSIONS (Units in µm) NE76100 (CHIP) 500 40 102 90 58 47 S 133 360 76 S 76 D D 90 70 205 G 45 Chip Thickness: 140 µm Note: All dimensions are typical unless otherwise specified. ORDERING INFORMATION PART NUMBER NE76100 NE76100N NE76100M IDSS SELECTION 30 to 100 mA (Standard) 30 to 60 60 to 100 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 12/02/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE