NE900275

Ku-BAND MEDIUM POWER GaAs MESFET FEATURES • • CLASS A OPERATION HIGH OUTPUT POWER POUT = 26.5 dBm G1dB = 7 dB HIGH POWER ADDED EFFICIENCY Linear Gain (dB) NE9000 SERIES NE9001 SERIES NE9002 SERIES TYPICAL LINEAR GAIN vs. FREQUENCY 24 21 18 NE9000 15 NE9001/9002 • DESCRIPTION The NE9000, NE9001, and NE9002 are 0.5 micron recessed gate medium power GaAs FETs for commercial and space amplifier and oscillator applications to 20 GHz. Chip configurations available are: the NE900000, a one cell die of 400 µm gate width; the NE900100, a one cell die of 750 µm gate width; and the NE900200, a two cell die of 1500 µm total gate width. The series is available in chip form or a variety of hermetic ceramic packages. The NE900000, NE900100, and NE900200 are standard die without wrap-around sourcemetallization, while the NE900000G, NE900100G, and NE900200G have wrap-around source metallization. The series is space qualified. 12 9 6 3 2.0 10.0 Frequency (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE900089A 89A UNITS MIN TYP MAX mA V V V mS mS mS °C/W W dBm dBm dBm dBm dBm dBm dBm dBm dB dB dB dB % 20.5 20 23 25 9 8 7 7 27 27 27 26 19.5 20.5 19.5 20.5 22 23 25.5 26.5 80 -1.5 120 -3.5 150 -5 NE900000 NE900000G NE900075 00 (CHIP), 75 MIN TYP MAX 80 -1.5 120 -3.5 150 -5 -2 -3.5 -5 -2 25 25 50 100 180 0.8 180 0.8 100 1.5 50 3 -3.5 -5 NE900100 NE900100G NE900175 00 (CHIP), 75 MIN TYP MAX 150 225 300 NE900200 NE900200G NE900275 00 (CHIP), 75 MIN TYP MAX 300 450 600 SYMBOLS IDSS VP PACKAGE OUTLINE PARAMETERS AND CONDITIONS Saturated Drain Current at VDS = 2.5 V, VGS = 0 Pinch-off Voltage at VDS = 2.5 V, IDS = 2.5 mA IDS = 5 mA IDS = 10 mA Transconductance at VDS = 2.5 V, IDS = 50 mA IDS = 90 mA IDS = 180 mA Thermal Resistance (Channel-to-Case) Total Power Dissipation Power Output at Test Point PIN = 11 dBm, VDS = 8V, ID = 50mA, f = 8 GHz PIN = 12 dBm,VDS = 8V, ID = 50mA f = 14.5 GHz PIN = 15 dBm, VDS = 8V, ID = 90mA f = 14.5 GHz PIN = 19 dBm, VDS = 8 V, ID = 180 mA, f = 14.5 Output Power at 1 dB Compression Point, VDS = 8 V, ID = 50 mA, f = 8 GHz VDS = 8 V, ID = 50 mA, f = 14.5 GHz VDS = 8 V, ID = 90 mA, f = 14.5 GHz VDS = 8 V, ID = 180 mA, f = 14.5 GHz Gain at 1 dB Compression Point VDS = 8 V, ID = 50 mA, f = 8 GHz VDS = 8 V, ID = 50 mA, f = 14.5 GHz VDS = 8 V, ID = 90 mA, f = 14.5 GHz VDS = 8 V, ID = 180 mA, f = 14.5 GHz Power Added Efficiency VDS = 8 V, at P1dB Conditions. gm RTH (C-C) PT PTEST P1dB G1dB ηADD California Eastern Laboratories NE9000, NE9001, NE9002 SERIES ABSOLUTE MAXIMUM RATINGS (TA = 25°C) SYMBOLS VDS VGS ID PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current NE900000, NE900075/89 NE900100, NE900175 NE900200, NE900275 Gate Current NE900000, NE900075/89 NE900100, NE900175 NE900200, NE900275 UNITS V V mA mA mA mA mA mA RATINGS 20 -9 150 300 600 1.3 2.6 5 Total Power Dissipation, PT (W) 3 POWER DERATING CURVE NE9002 2 NE9001 1 IG NE9000 0 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 75 φ 1.8 +0.15 -0.05 2 PLACES GATE SOURCE 2.7±0.3 2.3±0.1 0 50 100 150 200 Case Temperature, TA (°C) PACKAGE OUTLINE 89A 0.5 ± 0.1 2.03 ± 0.2 S 4.0 MIN (ALL LEADS) 0.51 DRAIN 2.7 TYP 7.0 +0.06 0.1 -0.02 9.8 MAX 3.0 MIN BOTH LEADS D G S 1.02 2.3 1.13 1.6 MAX 0.9 MAX NE900000 (CHIP) (Units in µm) 50 400 0.1 NE900100/NE900200 (CHIP)* (Units in µm) 52 D 550 50 430 228 D D 53 G S 50 62 130 440 240 G G S S 62 142 S 131 Die Thickness: 110 to 160 µm Recommended Bonding Area. S 50 Glassivated Area Plated Wraparound (Optional) 116 80 HANDLING PRECAUTIONS DIE ATTACHMENT Die attach can be accomplished with Au-Ge (390 ± 10°C) preforms in a forming gas environment. Epoxy die attach is not recommended. BONDING Gate and drain bonding wires should be semi-hard gold wire (3 to 8% elongation) 30 microns or less in diameter. Bonding should be performed with a wedge tip that has a taper of approximately 15°. Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be kept within a 300°C to 10 minute curve. If longer periods are required, the temperature should be lowered. PRECAUTIONS The user must operate in a clean, dry environment. The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean environment. The bonding equipment should be periodically checked for sources of surge voltage and should be properly grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static discharge. NE9000, NE9001, NE9002 SERIES TYPICAL SMALL SIGNAL SCATTERING PARAMETERS NE900000 VDS = 8 V, ID = 50 mA FREQUENCY (MHz) 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 MAG .96 .90 .87 .85 .82 .79 .75 .73 .72 .71 .72 .73 .74 .75 .74 .71 .65 S11 ANG -42 -59 -73 -85 -94 -103 -112 -120 -128 -134 -140 -144 -147 -149 -151 -152 -155 MAG 3.00 2.71 2.48 2.28 2.10 1.94 1.79 1.64 1.51 1.38 1.27 1.17 1.09 1.04 1.01 1.03 1.10 S21 ANG 148 136 125 114 105 96 88 80 73 67 62 58 54 51 48 45 40 MAG .04 .04 .05 .06 .06 .07 .07 .07 .07 .07 .07 .07 .07 .08 .09 .10 .11 S12 ANG 69 66 62 58 55 53 52 52 53 55 58 63 69 74 78 81 82 MAG .80 .78 .76 .74 .72 .71 .70 .70 .70 .71 .71 .71 .71 .71 .70 .69 .68 S22 ANG -11 -12 -13 -17 -20 -24 -28 -32 -34 -36 -38 -39 -40 -41 -43 -47 -53 NE900100 VDS = 8 V, ID = 90 mA FREQUENCY (MHz) 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 MAG .91 .82 .77 .75 .74 .74 .73 .72 .72 .72 .72 .73 .73 .74 .73 .71 .67 S11 ANG -63 -81 -97 -110 -120 -129 -135 -141 -145 -148 -150 -152 -153 -155 -157 -161 -167 MAG 4.54 3.70 3.14 2.75 2.44 2.17 1.93 1.70 1.50 1.34 1.21 1.13 1.08 1.05 1.03 1.00 .93 S21 ANG 137 124 111 100 91 83 77 71 67 62 58 55 51 48 44 41 36 MAG .05 .05 .06 .06 .07 .07 .07 .07 .07 .07 .07 .08 .08 .09 .10 .12 .13 S12 ANG 63 55 51 48 47 48 49 52 55 60 65 70 74 78 80 82 82 MAG .47 .46 .44 .43 .41 .40 .39 .39 .40 .41 .43 .46 .47 .49 .49 .46 .41 S22 ANG -26 -33 -38 -43 -47 -53 -58 -64 -70 -76 -81 -86 -90 -94 -98 -102 -109 NE9000, NE9001, NE9002 SERIES NE900200 TYPICAL SMALL SIGNAL SCATTERING PARAMETERS +90˚ +120˚ S21 1.5 GHZ S12 18 GHZ S12 1.5 GHZ S22 18 GHz +60˚ S11 18 GHz +30˚ +150˚ ±180˚ S22 1.5 GHz 0˚ S21 18 GHZ -150˚ S11 1.5 GHz -30˚ -120˚ -90˚ -60˚ NE900200 VDS = 8 V, ID = 180 mA FREQUENCY GHz 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.910 0.879 0.850 0.836 0.830 0.827 0.823 0.824 0.822 0.820 0.824 0.818 0.815 0.815 0.813 0.811 0.815 0.811 ANG -88.000 -106.000 -129.000 -143.000 -153.000 -160.000 -165.000 -170.000 -174.000 -178.000 176.000 172.000 167.000 163.000 160.000 157.000 154.000 153.000 MAG S21 AN 123.000 112.000 93.000 79.000 69.000 60.000 52.000 44.000 36.000 29.000 22.000 15.000 10.000 4.000 1.000 -5.000 -7.000 -11.000 MAG 0.057 0.065 0.070 0.075 0.077 0.082 0.081 0.086 0.091 0.100 0.108 0.117 0.129 0.146 0.160 0.187 0.207 0.241 S12 ANG 48.000 41.000 34.000 32.000 30.000 33.000 34.000 38.000 42.000 45.000 45.000 48.000 48.000 49.000 50.000 48.000 48.000 45.000 MAG 0.286 0.274 0.267 0.281 0.303 0.331 0.368 0.406 0.443 0.484 0.524 0.554 0.584 0.601 0.623 0.631 0.635 0.638 S22 ANG -56.000 -68.000 -82.000 -92.000 -102.000 -108.000 -114.000 -120.000 -125.000 -130.000 -134.000 -137.000 -141.000 -144.000 -146.000 -151.000 -156.000 -162.000 K 0.240 0.323 0.496 0.629 0.751 0.809 0.914 0.892 0.904 0.827 0.739 0.719 0.671 0.588 0.534 0.454 0.437 0.369 MAG1 19.300 18.044 16.430 15.075 14.108 13.148 12.647 11.933 11.187 10.414 9.674 8.956 8.137 7.300 6.604 5.670 4.949 4.153 4.852 4.143 3.077 2.413 1.983 1.693 1.490 1.342 1.196 1.100 1.002 0.920 0.840 0.784 0.732 0.690 0.647 0.627 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE9000, NE9001, NE9002 SERIES TYPICAL SMALL SIGNAL SCATTERING PARAMETERS +90˚ +120˚ +60˚ S21 2 GHZ +30˚ +150˚ S22 18 GHZ S12 18 GHZ ±180˚ S21 18 GHZ S12 2 GHZ 0˚ S11 18 GHZ S11 2 GHZ S22 2 GHZ -150˚ -30˚ -120˚ -90˚ -60˚ NE900275 VDS = 8 V, ID = 180 mA FREQUENCY GHZ 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.900 0.900 0.870 0.860 0.850 0.850 0.830 0.770 0.690 0.560 0.440 0.480 0.690 0.820 0.900 0.920 0.940 ANG -123.000 -146.000 -161.000 -172.000 -180.000 172.000 162.000 151.000 135.000 108.000 56.000 -19.000 -69.000 -97.000 -115.000 -126.000 -136.000 S21 MAG 3.670 2.760 2.140 1.820 1.610 1.510 1.500 1.520 1.600 1.770 1.880 1.770 1.480 1.110 0.860 0.650 0.540 ANG 95.000 76.000 54.000 46.000 26.000 16.000 1.000 -12.000 -34.000 -51.000 -80.000 -116.000 -146.000 -175.000 162.000 141.000 127.000 MAG 0.060 0.060 0.060 0.060 0.060 0.060 0.060 0.070 0.080 0.090 0.100 0.090 0.070 0.050 0.040 0.040 0.050 S12 ANG 24.000 15.000 3.000 3.000 1.000 -1.000 -3.000 -5.000 -16.000 -26.000 -51.000 -85.000 -121.000 -165.000 158.000 114.000 89.000 MAG 0.230 0.250 0.280 0.320 0.370 0.410 0.450 0.480 0.510 0.540 0.590 0.610 0.610 0.570 0.560 0.580 0.590 S22 ANG -97.000 -117.000 -131.000 -143.000 -152.000 -161.000 -170.000 -178.000 173.000 162.000 147.000 128.000 108.000 85.000 65.000 48.000 36.000 K 0.325 0.397 0.698 0.850 0.974 0.972 1.051 1.162 1.227 1.311 1.259 1.408 1.392 1.624 1.416 1.498 1.020 MAG1 17.865 16.628 15.523 14.819 14.287 14.008 12.595 10.931 10.140 9.594 9.681 9.136 9.522 8.835 9.487 7.938 9.472 (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -11/97 DATA SUBJECT TO CHANGE WITHOUT NOTICE