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NESG210719-T1

NESG210719-T1

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    NESG210719-T1 - NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION - NEC

  • 数据手册
  • 价格&库存
NESG210719-T1 数据手册
PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG210719 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAGE ORDERING INFORMATION PART NUMBER NESG210719 NESG210719-T1 QUANTITY 50 pcs (Non reel) 3 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 13.0 5.0 1.5 100 200 150 −65 to +150 UNIT V V V mA mW °C °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories NESG210719 ELECTRICAL CHARACTERISTICS (TA =+25ºC) PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Reverse Transfer Capacitance Noise Figure Associated Gain Gain Bandwidth Product (1) Gain Bandwidth Product (2) Insertion Power Gain (1) Insertion Power Gain (2) Cre Note 2 NF Ga fT fT |S21e|2 |S21e| 2 SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 0.5 V, IC = 0 mA VCE = 1 V, IC = 5 mA − − 140 − − 180 100 100 220 nA nA − VCB = 1 V, IE = 0 mA, f = 1 MHz VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 1 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 1 V, IC = 20 mA, f = 2 GHz − − 6 7 − 6.5 − 0.5 0.9 9 10 12 8 9 0.7 1.5 − − − − − pF dB dB GHz GHz dB dB Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter is grounded. hFE CLASSIFICATION RANK Marking hFE Value FB D7 140 to 220 NESG210719 PACKAGE DIMENSIONS 3-PIN SUPER MINI-MOLD (19 PACKAGE) (UNIT: mm) PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 07/01/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd.
NESG210719-T1 价格&库存

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