NNCD5.6F

NNCD5.6F

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    NNCD5.6F - ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DOUBLE TYPE, ANODE COMMON 3PIN MINI MOLD - ...

  • 详情介绍
  • 数据手册
  • 价格&库存
NNCD5.6F 数据手册
DATA SHEET E.S.D NOISE CLIPPING DIODES NNCD3.3F to NNCD12F ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (DOUBLE TYPE, ANODE COMMON) 3PIN MINI MOLD This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endur- PACKAGE DIMENSIONS (in millimeters) 0.4 –0.05 2.8 ± 0.2 1.5 0.65 –0.15 +0.1 external interface circuit protection. Type NNCD3.3F to NNCD12F Series include two elements in 0.95 0.95 2.9 ± 0.2 3PIN Mini Mold Package having allowable power dissipation of 200 mW. +0.1 ance of no less than 30 kV, thus making itself most suitable for 2 1 3 FEATURES • Based on the electrostatic discharge immunity test (IEC1000-42), the product assures the minimum endurance of 30 kV. • Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up). 1.1 to 1.4 0.3 Marking 0.16 –0.06 +0.1 APPLICATIONS • External interface circuit E.S.D protection. • Circuits for Waveform clipper, Surge absorber. PIN CONNECTION SC-59 (EIAJ) 1. K1: Cathode 1 2. K2: Cathode 2 3. A : Anode (common) K2 2 MAXIMUM RATINGS (TA = 25 °C) Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg 200 mW 100 W (tT = 10 µs 1 pulse) 150 °C –55 °C to +150 °C (Total) Fig. 6 0 to 0.1 0.4 –0.05 +0.1 A 3 K1 1 Document No. D11774EJ2V0DS00 (2nd edition) Date Published December 1996 N Printed in Japan © 1996 NNCD3.3F to NNCD12F ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) (A-K1, A-K2) Dynamic ImpedanceNote 2 Zz (Ω) MAX. 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Breakdown VoltageNote 1 VBR (V) Type Number MIN. NNCD3.3F NNCD3.6F NNCD3.9F NNCD4.3F NNCD4.7F NNCD5.1F NNCD5.6F NNCD6.2F NNCD6.8F NNCD7.5F NNCD8.2F NNCD9.1F NNCD10F NNCD11F NNCD12F 3.10 3.40 3.70 4.01 4.42 4.84 5.31 5.86 6.47 7.06 7.76 8.56 9.45 10.44 11.42 MAX. 3.50 3.80 4.10 4.48 4.90 5.37 5.92 6.53 7.14 7.84 8.64 9.55 10.55 11.56 12.60 IT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Reverse Leakage IR (µA) Capacitance Ct (pF) TEST CONDITION E.S.D Voltage (kV) TEST CONDITION MAX. 20 10 10 10 10 5 5 2 2 2 2 2 2 2 2 VR (V) 1.0 1.0 1.0 1.0 1.0 1.5 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 TYP. 220 210 200 180 170 160 140 120 110 90 90 90 80 70 70 MIN. 30 30 30 30 30 30 C = 150 pF R = 330 Ω (IEC1000 -4-2) VR = 0 V f = 1 MHz 30 30 30 30 30 30 30 30 30 Notes 1. Tested with pulse (40 ms) 2. Zz is measured at IT give a small A.C. signal. 2 NNCD3.3F to NNCD12F TYPICAL CHARACTERISTICS (TA = 25 °C) Fig. 1 POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 P - Power Dissipation - mW 200 150 100 50 0 0 25 50 75 100 125 150 TA - Ambient Temperature - °C Fig. 2 IT - VBR CHARACTERISTICS NNCD7.5F NNCD8.2F NNCD6.8F NNCD9.1F Fig. 3 IT - VBR CHARACTERISTICS 100 m NNCD3.3F NNCD3.3F 10 m NNCD3.9F NNCD4.3F IT - On State Current - A 1m NNCD4.7F 100 µ 10 µ 1µ 100 n 10 n 1n NNCD5.1F 100 m NNCD10F 10 m IT - On State Current - A 1m 100 µ 10 µ 1µ 100 n 10 n 1n NNCD11F NNCD12F NNCD5.6F NNCD6.2F 0 1 2 3 4 5 6 7 8 9 10 0 7 8 9 10 11 12 13 14 15 VBR - Breakdown Voltage - V VBR - Breakdown Voltage - V 3 NNCD3.3F to NNCD12F Fig. 4 ZZ - IT CHARACTERISTICS 1 000 TYP. ZZ - Dynamic Impedance - Ω 100 NNCD5.6F NNCD3.9F NNCD4.7F NNCD5.1F NNCD10F 10 NNCD7.5F 1 0.1 1 10 100 IT - On State Current - mA Fig. 5 TRANSIENT THERMAL IMPEDANCE 5 000 Zth - Transient Thermal Impedance - °C/W 1 000 625 °C/W 100 NNCD [ ] F 10 5 1m 10 m 100 m 1 t - Time - s 10 100 Fig. 6 SURGE REVERSE POWER RATING 1 000 TA = 25 °C Non-repetitive PRSM PRSM - Surge Reverse Power - W tT 100 NNCD [ ] F 10 1 1µ 10 µ 100 µ 1m 10 m 100 m tT - Pulse Width - s 4 NNCD3.3F to NNCD12F Sample Application Circuits SetNote Conecter Micro com. PC (CD ROM) Di Palallel Interface Di Interface Cable Note Set Printer, P.D.C, T.V Game etc. 5 NNCD3.3F to NNCD12F REFERENCE Document Name NEC semiconductor device reliability/quality control system NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor device Semiconductor device mounting technology manual Guide to quality assurance for semiconductor device Document No. C11745E MEI-1201 C11531E C10535E MEI-1202 6 NNCD3.3F to NNCD12F [MEMO] 7 NNCD3.3F to NNCD12F [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5 8
NNCD5.6F
1. 物料型号: - 型号为NNCD3.3F至NNCD12F,这些是双极型静电放电噪声钳位二极管,具有3脚迷你模塑封装。

2. 器件简介: - 该系列产品是为静电放电(E.S.D)噪声保护而开发的二极管。基于IEC1000-4-2对电磁干扰(EMI)的测试,这些二极管至少能承受30kV的耐力,非常适合用于外部接口电路保护。

3. 引脚分配: - 1. K1: 阴极1 - 2. K2: 阴极2 - 3. A : 阳极(共用) - 封装类型为SC-59(EIAJ)。

4. 参数特性: - 基于静电放电免疫测试(IEC1000-42),产品至少能承受30kV的耐力。 - 基于设定的参考电源,产品实现了一个系列产品的覆盖范围广泛(共15个产品型号)。

5. 功能详解: - 这些二极管主要用于外部接口电路的E.S.D保护和波形钳位、浪涌吸收电路。

6. 应用信息: - 外部接口电路的E.S.D保护。 - 波形钳位、浪涌吸收电路。

7. 封装信息: - 提供了封装的尺寸图,具体尺寸以毫米为单位标注。
NNCD5.6F 价格&库存

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