NNCD8.2J

DATA SHEET ESD NOISE CLIPPING DIODE NNCD5.6J to NNCD36J ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN ULTRA SUPER MINI MOLD (FLAT TYPE) DESCRIPTION These products are a diode developed Based for on ESD the (Electrostatic Discharge) absorption. PACKAGE DRAWING (Unit: mm) 1.4 ± 0.1 1.0 ± 0.1 0.3 ± 0.05 IEC-61000-4-2 test on electromagnetic interference (EMI), 0.6 ± 0.1 the diode assures an endurance, thus making itself most suitable for external interface circuit protection. These products are can cope with more high density assembling. Cathode Indication 0.13 ± 0.05 FEATURES • Base on the electrostatic discharge immunity test (IEC 61000-4-2), the product assures the minimum endurance. product can achiever high density and automatic packaging. APPLICATIONS • External interface circuit ESD absorption. • Circuits for waveform clipper, surge absorber MAXIMUM RATINGS (TA = 25°C) Item Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature P PRSM Tj Tstg Symbol Rating 150 85 (t = 10 µs, 1 pulse) 150 −55 to +150 Unit mW W o o Total C C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15985EJ3V1DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 0.05 MAX. • Mounted in the ultra super mini mold (flat) package, the 0.5 MAX. Remark 2003 NNCD5.6J to NNCD36J ELECTRICAL CHARACTERISTICS (TA = 25°C) TYPE No. Breakdown Voltage VBR (V) MIN. NNCD5.6J NNCD6.8J NNCD8.2J NNCD10J NNCD16J NNCD18J NNCD24J NNCD36J 5.3 6.2 7.7 9.0 15.0 16.2 22.0 34.0 MAX. 6.3 7.1 8.7 11.0 17.0 19.8 26.0 38.0 IT (mA) 5 5 5 5 5 5 5 2 TYP. 110 90 70 55 30 25 20 15 Note1 Capacitance Ct (pF) Condition VR = 0 V f = 1 MHz Reverse Leakage IR (µA) MAX. 5 2 2 2 2 2 2 2 VR (V) 2.5 3.5 5.0 7.0 12.0 13.0 19.0 27.0 ESD Voltage (kV) MIN. 30 30 30 30 30 23 15 12 Note2 IT (mA) C = 150 pF R = 330 Ω Contact discharge Notes 1. Tested with pulse (40 ms) 2. Based upon with IEC 61000-4-2 2 Data Sheet D15985EJ3V1DS NNCD5.6J to NNCD36J TYPICAL CHARACTERISTICS (TA = 25°C) Figure 1. POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 180 P - Power Dissipation - mW 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TA - Ambient Temperature - °C Figure 2. IT - VBR CHARACTERISTICS 100000 NNCD5.6J 10000 IT - On-state Current - µA NNCD8.2J NNCD16J NNCD24J NNCD36J 1000 100 10 1 0.1 NNCD6.8J 0.01 0 5 10 15 20 25 30 35 40 45 VBR - Breakdown Voltage - V NNCD10J NNCD18J Data Sheet D15985EJ3V1DS 3 NNCD5.6J to NNCD36J Figure 3. Ct - VR CHARACTERISTICS 90 Ct - Capacitance between Terminal - pF 80 70 60 50 NNCD5.6J NNCD6.8J TA = 25 ˚C f = 1 MHz NNCD8.2J 40 NNCD10J 30 20 10 0 0.1 1 VR - Reverse Voltage - V NNCD16J NNCD18J NNCD24J NNCD36J 10 100 Figure 4. SURGE REVERSE POWER RATINGS 1000 PRSM - Surge Reverse Power - W TA = 25˚C Non-Repetive PRSM tT 100 NNCD[ ]J 10 1 1µ 10 µ 100 µ 1m 10 m 100 m tT - Pulse Width - s Figure 5. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Zth - Transient Thermal Impedance - (ºC/W) 1000 833˚C/W NNCD[ ]J 100 10 1 100 µ 1m 10m 100 m 1 10 100 1000 t - Time - s Remark When using ceramic board of 10 x 7.5 x 0.75 mm (Cu film 11 x 2 x 0.035 mm) 4 Data Sheet D15985EJ3V1DS NNCD5.6J to NNCD36J • T he information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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