NP160N04TDG-E2-AY

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP160N04TDG-E1-AY NP160N04TDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263-7pin (MP-25ZT) typ. 1.5 g Note Pb-free (This product does not contain Pb in the external electrode). FEATURES • Super low on-state resistance RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A • Logic level drive type (TO-263-7pin) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±160 ±640 220 1.8 175 −55 to +175 372 61 372 V V A A W W °C °C mJ A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Energy Note2 Note3 Note3 EAS IAR EAR Repetitive Avalanche Current Repetitive Avalanche Energy Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. RG = 25 Ω, Tch(peak) ≤ 150°C THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.68 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18761EJ2V0DS00 (2nd edition) Date Published July 2007 NS CP(K) Printed in Japan 2007 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NP160N04TDG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 5 V, ID = 40 A VGS = 10 V, ID = 80 A VGS = 4.5 V, ID = 80 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 80 A, VGS = 10 V, RG = 0 Ω MIN. TYP. MAX. 1 ±100 UNIT μA nA V S 1.5 37 2.0 94 1.6 2.2 10500 980 630 35 55 107 17 2.5 Drain to Source On-state Resistance 2.0 5.4 15750 1470 1140 80 140 220 50 270 mΩ mΩ pF pF pF ns ns ns ns nC nC nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD Note VDD = 32 V, VGS = 10 V, ID = 160 A IF = 160 A, VGS = 0 V IF = 160 A, VGS = 0 V, di/dt = 100 A/μs 180 30 57 0.9 49 60 Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VF(S-D) trr Qrr 1.5 V ns nC Note Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RL VDD VGS VGS Wave Form 0 10% VGS 90% VDS 90% 90% 10% 10% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D18761EJ2V0DS NP160N04TDG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 250 dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 PT - Total Power Dissipation - W 200 150 100 50 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - °C 10000 1000 ID - Drain Current - A ID(pulse) d it e im ) )L V on S( 1i 0 R D GS = (V PW =1 i 00 100 10 1 ID(DC) DC y ar nd co Se μs 1i m i s 1i 0 w Po D er m i s t io ip a i ss d it e im nL Br o ed ak wn d it e Lim TC = 25°C Single Pulse 0.1 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W Rth(ch-A) = 83.3°C/Wi 10 1 Rth(ch-C) = 0.68°C/Wi 0.1 Single Pulse 0.01 100 μ 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet D18761EJ2V0DS 3 NP160N04TDG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 700 600 ID - Drain Current - A 1000 VGS = 10 V ID - Drain Current - A 100 10 1 0.1 VDS = 10 V Pulsed 500 400 300 200 100 0 0 0.5 1 1.5 2 2.5 VDS - Drain to Source Voltage - V Pulsed 4.5 V TA = −55°C 25°C 75°C 150°C 175°C 0.01 1 2 3 4 5 6 VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 Tch = −55°C 25°C 75°C 2.5 2 1.5 1 0.5 0 -75 -25 25 75 100 10 150°C 175°C 1 0.1 1 10 100 VDS = 5 V Pulsed VDS = VGS ID = 250 μA 125 175 225 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 6 Pulsed 5 4 3 VGS = 4.5 V 2 1 0 1 10 100 1000 ID - Drain Current - A 10 V 12 10 8 6 4 2 0 0 5 10 15 20 VGS - Gate to Source Voltage - V ID = 8 0 A Pulsed 4 Data Sheet D18761EJ2V0DS NP160N04TDG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 6 Ciss, Coss, Crss - Capacitance - pF 5 4 3 2 1 0 -75 ID = 8 0 A Pulsed VGS = 4.5 V Ciss 10000 Coss 10 V 1000 VGS = 0 V f = 1 MHz 100 0.01 0.1 1 Crss -25 25 75 125 175 225 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 35 30 25 20 15 10 5 0 VDS ID = 160 A Pulsed 100 150 0 200 VGS 3 6 VDD = 32 V 20 V 8V 12 VGS - Gate to Source Voltage - V td(off) 100 tr td(on) 10 VDD = 20 V VGS = 10 V RG = 0 Ω 1 0.1 1 10 100 1000 ID - Drain Current - A tf 9 0 50 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 VGS = 10 V 10 0V 100 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 1 10 100 1000 1 Pulsed 0.1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet D18761EJ2V0DS 5 NP160N04TDG PACKAGE DRAWING (Unit: mm) TO-263-7pin (MP-25ZT) EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D18761EJ2V0DS NP160N04TDG TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION NEC 160N04 DG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The NP160N04TDG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Recommended Condition Symbol IR60-00-3 Partial heating Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet D18761EJ2V0DS 7 NP160N04TDG • T he information in this document is current as of July, 2007. The information is subject to change without notice. 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