NP34N055HHE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP34N055HHE, NP34N055IHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER NP34N055HHE NP34N055IHE PACKAGE TO-251 TO-252 DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 19 m Ω MAX. (VGS = 10 V, I D = 17 A) • Low Ciss : Ciss = 1600 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 (TO-251) 55 ±20 ±34 ±136 1.2 88 34 / 27 / 10 11 / 72 / 100 175 –55 to + 175 V V A A W W A mJ °C °C (TO-252) VDSS VGSS ID(DC) ID(pulse) PT PT IAS EAS Tch Tstg Total Power Dissipation (TA = 25 °C) Total Power Dissipation (TC = 25 °C) Single Avalanche Current Single Avalanche Energy Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 % Note2 Note2 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V (see Figure 4.) THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.70 125 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14153EJ3V0DS00 (3rd edition) Date Published March 2001 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1999,2000 NP34N055HHE, NP34N055IHE ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Threshold Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(th) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 17 A VDS = VGS, ID = 250 µ A VDS = 10 V, ID = 17 A VDS = 55 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 25 V VGS = 0 V f = 1 MHz ID = 17 A VGS(on) = 10 V VDD = 28 V RG = 1 Ω ID = 34 A VDD = 44 V VGS = 10 V IF = 34 A, VGS = 0 V IF = 34 A, VGS = 0 V di/dt = 100 A/µ s 1600 250 120 21 15 35 12 30 9 12 1.0 40 58 2.0 6 MIN. TYP. 15 3.0 12 10 ±10 2400 380 220 47 38 70 29 45 MAX. 19 4.0 UNIT mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90 % 90 % 10 % 10 % VGS Wave Form 0 10 % VGS(on) 90 % BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1 % VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D14153EJ3V0DS NP34N055HHE, NP34N055IHE TYPICAL CHARACTERISTICS (T A = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 80 60 40 20 0 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 150 175 200 TC - Case Temperature - ˚C TC - Case Temperature - ˚C Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR 120 EAS- Single Avalanche Energy - mJ 5 Figure3. FORWARD BIAS SAFE OPERATING AREA 1000 100 80 60 40 20 100 mJ 72 mJ IAS = 10 A 27 A 34 A ID(pulse) ID - Drain Current - A 100 PW 10 0µ s d ite im 0 V) )L (on =1 DS S R VG (at ID(DC) 10 Po Lim we ite r Di d ss ipa tio n DC 1m s =1 0µ s 1 TC = 25˚C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V 11 mJ 50 75 100 125 150 175 0.1 0.1 0 25 Starting Tch - Starting Channel Temperature - ˚C Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 Rth(ch-A) = 125 ˚C/W 100 10 Rth(ch-C) = 1.70 ˚C/W 1 0.1 Single Pulse TC = 25˚C 100 µ 1m 10 m 100 m 1 10 100 1000 0.01 10 µ PW - Pulse Width - s Data Sheet D14153EJ3V0DS 3 NP34N055HHE, NP34N055IHE Figure6. FORWARD TRANSFER CHARACTERISTICS 100 Pulsed Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 200 ID - Drain Current - A ID - Drain Current - A 10 TA = 175˚C 150˚C 75˚C 25˚C −55˚C 160 120 80 40 VGS =10 V 1 0.1 0.01 1 2 3 4 5 6 0 0 2 4 6 8 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS=10V Pulsed 10 TA = 175˚C 75˚C 25˚C −55˚C Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 Pulsed 35 30 25 20 15 10 5 0 0 5 10 15 20 ID = 17 A 1 0.1 0.01 0.01 0.1 1 10 100 ID - Drain Current - A Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ VGS(th) - Gate to Source Threshold Voltage - V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4.0 VDS = VGS ID = 250 µ A 20 VGS = 10 V 3.0 2.0 10 1.0 0 1 10 100 1000 0 −50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - ˚C 4 Data Sheet D14153EJ3V0DS NP34N055HHE, NP34N055IHE RDS(on) - Drain to Source On-state Resistance - mΩ 35 30 25 20 15 10 5 ID = 17 A 0 −50 0 50 100 150 VGS = 10 V ISD - Diode Forward Current - A Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 45 Pulsed 40 Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed 100 VGS = 10 V 10 VGS = 0 V 1 0.1 0 0.5 1.0 1.5 Tch - Channel Temperature - ˚C Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VSD - Source to Drain Voltage - V Figure15. SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 10000 1000 Ciss, Coss, Crss - Capacitance - pF VGS = 0 V f = 1 MHz Ciss tf 100 td(off) td(on) 10 tr 1000 Coss 100 Crss 10 0.1 1 10 100 1 0.1 1 10 100 VDS - Drain to Source Voltage - V ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery Time - ns di/dt = 100 A/µs VGS = 0 V Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 VDS - Drain to Source Voltage - V 16 14 12 VDD = 44 V 28 V 11 V 10 VGS 8 6 4 VDS 2 ID = 34 A 0 4 8 12 16 20 24 28 32 0 VGS - Gate to Source Voltage - V 70 60 50 40 30 20 10 0 100 10 1 0.1 1 10 100 IF - Drain Current - A QG - Gate Charge - nC Data Sheet D14153EJ3V0DS 5 NP34N055HHE, NP34N055IHE PACKAGE DRAWINGS (Unit : mm) 1)TO-251 (MP-3) 6.5±0.2 5.0±0.2 1.5+0.2 −0.1 2)TO-252 (MP-3Z) 2.3±0.2 0.5±0.1 6.5±0.2 5.0±0.2 1.5+0.2 −0.1 2.3±0.2 0.5±0.1 1.6±0.2 5.5±0.2 13.7 MIN. 4.3 MAX. 0.8 TYP. 0.5+0.2 −0.1 2.3 TYP. 2.3 TYP. 0.75 TYP. 0.5+0.2 −0.1 2.3 TYP. 2.3 TYP. 0.8 TYP. EQUIVALENT CIRCUIT Drain Gate Body Diode Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D14153EJ3V0DS 0.7 TYP. 1.1±0.2 2.0 MIN. 1.1±0.2 7.0 MIN. 0.9 MAX. 10.0 MAX. 0.8 MAX. 1.0 MIN. 1.8 TYP. 5.5±0.2 NP34N055HHE, NP34N055IHE [MEMO] Data Sheet D14153EJ3V0DS 7 NP34N055HHE, NP34N055IHE • The information in this document is current as of March, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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