NP88N075MUE

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N075EUE, NP88N075KUE NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP88N075EUE-E1-AY NP88N075EUE-E2-AY NP88N075KUE-E1-AY NP88N075KUE-E2-AY Note1, 2 Note1, 2 Note1 Note1 Note1, 2 Note1, 2 Note1 Note1 LEAD PLATING PACKING PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g Pure Sn (Tin) Tape 800 p/reel TO-263 (MP-25ZK) typ. 1.5 g NP88N075CUE-S12-AZ NP88N075DUE-S12-AY NP88N075MUE-S18-AY NP88N075NUE-S18-AY Sn-Ag-Cu Tube 50 p/tube TO-220 (MP-25) typ. 1.9 g TO-262 (MP-25 Fin Cut) typ. 1.8 g TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g Pure Sn (Tin) Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design (TO-220) FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14676EJ6V0DS00 (6th edition) Date Published October 2007 NS Printed in Japan 1999, 2000, 2007 The mark shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field. NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note2 Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 75 ±20 ±88 ±352 288 1.8 175 −55 to +175 69/88 450/14 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Notes 1. Calculated constant current according to MAX. allowable channel temperature. 2. PW ≤ 10 μs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.52 83.3 °C/W °C/W 2 Data Sheet D14676EJ6V0DS NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(th) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 60 V, VGS = 10 V, ID = 88 A IF = 88 A, VGS = 0 V IF = 88 A, VGS = 0 V, di/dt = 100 A/μs TEST CONDITIONS VDS = 75 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μA VDS = 10 V, ID = 44 A VGS = 10 V, ID = 44 A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 38 V, ID = 44 A, VGS = 10 V, RG = 0 Ω 2.0 30 3.0 60 6.2 8200 800 440 35 28 105 16 150 30 52 1.0 80 240 8.5 12300 1200 800 77 70 210 40 230 MIN. TYP. MAX. 10 ±100 4.0 UNIT μA nA V S mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG VGS RL VDD VDS 90% 90% 10% 10% VGS Wave Form 0 10% VGS 90% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 μs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD Data Sheet D14676EJ6V0DS 3 NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE TYPICAL CHARACTERISTICS (TA = 25°C) Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % Figure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 350 PT - Total Power Dissipation - W 100 80 60 40 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 20 0 0 25 50 75 100 125 150 175 200 TC - Case Temperature - °C TC - Case Temperature - °C Figure3. FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) d ite im V) ) L 10 on S( = RDVGS ( 10 0 Figure4. SINGLE AVALANCHE ENERGY DERATING FACTOR Single Pulse Avalanche Energy - mJ PW μs =1 500 450 mJ 0μ ID - Drain Current - A 100 ID(DC) 10 1m ms tio s s 400 Po D Lim wer C ite Dis d sip a n 300 200 100 14 mJ 0 25 50 10 IAS = 69 A 1 TC = 25°C Single Pulse 0.1 0.1 1 88 A 10 100 75 100 125 150 175 VDS - Drain to Source Voltage - V Starting Tch - Starting Channel Temperature - °C Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W 100 Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 0.52°C/W 0.1 Single Pulse TC = 25°C 0.01 10 μ 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 4 Data Sheet D14676EJ6V0DS NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE Figure6. FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V Figure7. DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 500 ID - Drain Current - A ID - Drain Current - A 100 TA = −55°C 25°C 75°C 175°C 400 300 200 100 0 0 Pulsed VGS = 10 V 10 1 0.1 2 3 4 5 6 7 VGS - Gate to Source Voltage - V 1 2 3 4 VDS - Drain to Source Voltage - V 100 RDS(on) - Drain to Source On-state Resistance - mΩ Figure8. FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 Pulsed | yfs | - Forward Transfer Admittance - S 10 TA = 175°C 75°C 25°C −55°C 15 1 10 ID = 44 A 0.1 VDS = 10 V Pulsed 10 100 5 0.01 0.01 0.1 1 0 0 4 8 12 16 20 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ VGS(th) - Gate to Source Threshold Voltage - V Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 15 Pulsed VGS = 10 V Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4 VDS = VGS ID = 250 μA 10 3 2 5 1 0 1 10 100 1000 ID - Drain Current - A 0 −50 0 50 100 150 Tch - Channel Temperature - °C Data Sheet D14676EJ6V0DS 5 NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE RDS(on) - Drain to Source On-state Resistance - mΩ IF - Diode Forward Current - A Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 18 ID = 44 A 16 14 12 10 8 6 4 2 0 −50 0 50 100 150 VGS = 10 V Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed VGS = 10 V 100 0V 10 1 0.1 0 0.5 1.0 1.5 Tch - Channel Temperature - °C VF(S-D) - Body Diode Forward Voltage - V Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1 MHz Ciss Figure15. SWITCHING CHARACTERISTICS 1000 tf td(off) 100 td(on) tr 10 VDD = 38 V VGS = 10 V RG = 0 Ω 100 10000 1000 Coss Crss 100 0.1 1 10 100 1 0.1 1 10 VDS - Drain to Source Voltage - V ID - Drain Current - A Figure16. REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 80 60 10 VDD = 60 V 38 V 15 V 1000 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 8 VGS 100 6 4 2 ID = 88 A 10 40 20 VDS 1 0.1 di/dt = 100 A/μs VGS = 0 V 1 10 100 0 0 40 80 QG - Gate Charge - nC 120 0 160 IF - Diode Forward Current - A 6 Data Sheet D14676EJ6V0DS VGS - Gate to Source Voltage - V NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE PACKAGE DRAWINGS (Unit: mm) 1)TO-263 (MP-25ZJ) Note 2)TO-263 (MP-25ZK) 4.8 MAX. 1.3 ± 0.2 No plating 10 TYP. 4 1.0 ± 0.5 8.5 ± 0.2 10.0 ± 0.3 7.88 MIN. 4 1.35 ± 0.3 4.45 ± 0.2 1.3 ± 0.2 8.0 TYP. 9.15 ± 0.3 15.25 ± 0.5 0.025 to 0.25 1 2 3 5.7 ± 0.4 1.4 ± 0.2 0.7 ± 0.2 2.54 TYP. 0 .5R TY P. TY P. 2.54 TYP. R 0.8 0.5 ± 0.2 2.54 0.75 ± 0.2 0.5 ± 0.2 8ο 0 to 2.8 ± 0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 0.25 1 2 3 1.Gate 2.Drain 3.Source 2.5 4.Fin (Drain) 3)TO-220 (MP-25) 3.0 ± 0.3 Note 4)TO-262 (MP-25 Fin Cut) 4.8 MAX. 1.0 ± 0.5 Note 10.6 MAX. 10.0 TYP. φ 3.6 ± 0.2 5.9 MIN. 1.3 ± 0.2 4.8 MAX. 1.3 ± 0.2 10 TYP. 15.5 MAX. 4 1 1.3 ± 0.2 2 3 4 123 6.0 MAX. 1.3 ± 0.2 12.7 MIN. 12.7 MIN. 8.5 ± 0.2 0.75 ± 0.1 2.54 TYP. 0.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8 ± 0.2 0.75 ± 0.3 2.54 TYP. 0.5 ± 0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.8 ± 0.2 Note Not for new design 2.54 ± 0.25 Data Sheet D14676EJ6V0DS 7 NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE 5)TO-220 (MP-25K) 6)TO-262 (MP-25SK) 2.8 ± 0.3 1.2 ± 0.3 10.0 ± 0.2 φ 3.8 ± 0.2 4.45 ± 0.2 1.3 ± 0.2 10.0 ± 0.2 4.45 ± 0.2 1.3 ± 0.2 10.1 ± 0.3 15.9 MAX. 6.3 ± 0.3 4 4 3.1 ± 0.2 12 3 13.7 ± 0.3 13.7 ± 0.3 1.27 ± 0.2 0.8 ± 0.1 1.27 ± 0.2 0.8 ± 0.1 3.1 ± 0.3 0.5 ± 0.2 123 8.9 ± 0.2 0.5 ± 0.2 2.54 TYP. 2.54 TYP. 2.5 ± 0.2 2.5 ± 0.2 2.54 TYP. 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 1.Gate 2.Drain 3.Source 4.Fin (Drain) EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 8 Data Sheet D14676EJ6V0DS NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION NEC 88N075 UE Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS These products should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow MP-25ZJ, MP-25ZK Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Recommended Condition Symbol IR60-00-3 Wave soldering MP-25, MP-25K, MP-25SK, MP-25 Fin Cut Partial heating MP-25ZJ, MP-25ZK, MP-25K, MP-25SK Partial heating MP-25, MP-25 Fin Cut Maximum temperature (Solder temperature): 260°C or below Time: 10 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Maximum temperature (Pin temperature): 350°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Maximum temperature (Pin temperature): 300°C or below Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less P300 P350 THDWS Caution Do not use different soldering methods together (except for partial heating). Data Sheet D14676EJ6V0DS 9 NP88N075EUE, NP88N075KUE, NP88N075CUE, NP88N075DUE, NP88N075MUE, NP88N075NUE • T he information in this document is current as of October, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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