NX5323EH

DATA SHEET LASER DIODE NX5323EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5323EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s. APPLICATION • FTTH PON (B-PON, G-PON, GE-PON 10 km) system FEATURES • Optical output power • Low threshold current • Differential Efficiency • InGaAs monitor PIN-PD • CAN package • Focal point Po = 13.0 mW lth = 7 mA ηd = 0.5 W/A • Wide operating temperature range TC = −40 to +85°C φ 5.6 mm 6.35 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. PL10741EJ01V0DS (1st edition) Date Published July 2009 NS Printed in Japan 2009 NX5323EH PACKAGE DIMENSIONS (UNIT: mm) φ 5.6+0.00 –0.03 *2 (φ 4.2) (φ 3.55)*2 1.0±0.1 (0.4)*2 BOTTOM VIEW 1 2 3 4 (0.4) 110°±2° *2 φ 2.0 3.87±0.3 6.35±0.5 Focal Point Δx = ±300 μ m MAX. Δy = ±300 μ m MAX. *1 (3.0) PIN CONNECTIONS Reference Plane 2 1 (Case) LD 4 PD 3 15.0±1.0 1.2±0.1 *2 4– φ 0.45 φ 2.0 *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. 2 Data Sheet PL10741EJ01V0DS NX5323EH ORDERING INFORMATION Part Number NX5323EH 4-pin CAN with ball lens cap Package Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. Data Sheet PL10741EJ01V0DS 3 NX5323EH ABSOLUTE MAXIMUM RATINGS Parameter Optical Output Power Forward Current of LD Reverse Voltage of LD Forward Current of PD Reverse Voltage of PD Operating Case Temperature Storage Temperature Lead Soldering Temperature Relative Humidity (noncondensing) Symbol Po IF VR IF VR TC Tstg Tsld RH Ratings 20 150 2.0 10 15 −40 to +85 −40 to +85 350 (3 sec.) 85 Unit mW mA V mA V °C °C °C % ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) Parameter Operating Voltage Threshold Current Differential Efficiency Center Wavelength Symbol Vop Ith Po = 13.0 mW Conditions MIN. TYP. 1.1 7 0.40 Po = 13.0 mW, RMS (−20 dB) TC = −40 to +85°C Spectral Width σ Po = 13.0 mW, RMS (−20 dB) TC = −40 to +85°C Rise Time Fall Time Monitor Current Monitor Dark Current Monitor PD Terminal Capacitance Fiber Coupling Power Focal Distance tr tf Im ID Ct Pf Df 20-80% 80-20% VR = 1.5 V, Po = 13.0 mW V R = 10 V VR = 10 V, f = 1 MHz Po = 13.0 mW, Optimized Coupling with 8 degree angled SMF 5.85 5 2.0 6.35 6.85 100 0.15 0.15 200 100 20 0.3 0.3 ns ns 1.5 2.3 nm 1 272 0.50 1 356 MAX. 1.5 15 Unit V mA W/A nm ηd λC μA nA pF mW mm 4 Data Sheet PL10741EJ01V0DS NX5323EH REFERENCE Document Name Opto-Electronics Devices Pamphlet Document No. PX10160E Data Sheet PL10741EJ01V0DS 5 NX5323EH • T he information in this document is current as of July, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of NEC Electronics products. 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M8E0904E 6 Data Sheet PL10741EJ01V0DS NX5323EH SAFETY INFORMATION ON THIS PRODUCT DANGER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT SEMICONDUCTOR LASER AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture Warning Laser Beam A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth.