PS2532L2-1-V

DATA SHEET PHOTOCOUPLER PS2532-1,-2,-4,PS2532L-1,-2,-4 HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES DESCRIPTION The PS2532-1, -2, -4 and PS2532L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington connected phototransistor. The PS2532-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2532L-1, -2, -4 are lead bending type (Gull-wing) for surface mount. TM −NEPOC Series− FEATURES • High collector to emitter voltage (VCEO = 300 V) • High Isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products (Option) • High current transfer ratio (CTR = 4 000 % TYP.) • High-speed switching (tr, tf = 100 µs TYP.) • Ordering number of taping product: PS2532L-1-E3, E4, F3, F4, PS2532L-2-E3, E4 • UL approved: File No. E72422 (S) • BSI approved: No. 8221/8222 • NEMKO approved: No. 98101708 • SEMKO approved: No. 9824187/01-02 • DEMKO approved: No. 307863 • FIMKO approved: No. F1 11397 • VDE0884 approved (Option) APPLICATIONS • Telephone, Exchange equipment • FAX/MODEM The information in this document is subject to change without notice. Document No. P11434EJ5V0DS00 (5th edition) Date Published September 1998 NS CP(K) Printed in Japan The mark • shows major revised points. © 1990 PS2532-1,-2,-4,PS2532L-1,-2,-4 PACKAGE DIMENSIONS (in millimeters) DIP type PS2532-1 PS2532-2 5.1 MAX. 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.2 MAX. 8 7 TOP VIEW 6 5 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 1 2 3 4 6.5 7.62 2.8 MIN. 4.55 MAX. 2.8 MIN. 4.55 MAX. 3.8 MAX. 3.8 MAX. 6.5 7.62 0.65 0 to 15˚ 0.50±0.10 0.25 M 2.54 0.65 0 to 15˚ 2.54 0.50±0.10 0.25 M 1.25±0.15 1.25±0.15 PS2532-1 (NEW PACKAGE) PS2532-4 TOP VIEW 16 15 14 13 12 11 10 9 4.6±0.35 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 6.5 20.3 MAX. 1 2 3 4 5 6 7 8 6.5 1 2 1, 3, 5, 7. 2, 4, 6, 8. 9, 11, 13, 15. 10, 12, 14, 16. Anode Cathode Emitter Collector 7.62 2.8 MIN. 4.55 MAX. 2.8 MIN. 4.55 MAX. 3.8 MAX. 3.8 MAX. 7.62 0.65 0 to 15˚ 0.50±0.10 0.25 M 2.54 0.65 0 to 15˚ 2.54 0.50±0.10 0.25 M 1.25±0.15 1.25±0.15 2 PS2532-1,-2,-4,PS2532L-1,-2,-4 Lead bending type PS2532L-1 PS2532L-2 5.1 MAX. 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.2 MAX. 8 7 TOP VIEW 6 5 1, 3. Anode 2, 4. Cathode 5, 7. Emitter 6, 8. Collector 1 2 3 4 6.5 0.05 to 0.2 3.8 MAX. 0.9±0.25 2.54 1.25±0.15 0.25 M 9.60±0.4 1.25±0.15 0.25 M 2.54 3.8 MAX. 0.9±0.25 9.60±0.4 PS2532L-1 (NEW PACKAGE) PS2532L-4 TOP VIEW 16 15 14 13 12 11 10 9 4.6±0.35 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 20.3 MAX. 1 2 3 4 5 6 7 8 1, 3, 5, 7. 2, 4, 6, 8. 9, 11, 13, 15. 10, 12, 14, 16. Anode Cathode Emitter Collector 6.5 0.05 to 0.2 3.8 MAX. 0.9±0.25 2.54 1.25±0.15 0.25 M 9.60±0.4 3.8 MAX. 1.25±0.15 0.25 M 2.54 0.9±0.25 9.60±0.4 0.05 to 0.2 7.62 6.5 7.62 0.05 to 0.2 7.62 6.5 7.62 3 PS2532-1,-2,-4,PS2532L-1,-2,-4 Lead bending type for long distance PS2532L1-1 PS2532L2-1 5.1 MAX. 5.1 MAX. 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 6.5 6.5 10.16 7.62 2.8 MIN. 4.25 MAX. 3.8 MAX. 3.8 MAX. 10.16 7.62 0.25±0.2 0.35 0 to 15˚ 0.50±0.10 0.25 M 1.25±0.15 0.25 M 0.9±0.25 2.54 12.0 MAX. 1.25±0.15 2.54 PS2532L1 4.6±0.35 1.0±0.2 4.6±0.35 1.0±0.2 PS2532L2 TOP VIEW 4 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 4 TOP VIEW 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 10.16 7.62 3.8 MAX. 0.25±0.2 6.5 10.16 7.62 3.2 MIN. 4.25 MAX. 3.8 MAX. 6.5 0 to 15˚ 0.50±0.10 0.25 M 2.54 1.25±0.15 0.25 M 0.35 0.9±0.25 2.54 12.0 MAX. 1.25±0.15 4 PS2532-1,-2,-4,PS2532L-1,-2,-4 ORDERING INFORMATION Part Number PS2532-1 PS2532L-1 PS2532L1-1 PS2532L2-1 PS2532-2 PS2532L-2 PS2532-4 PS2532L-4 PS2532-1-V PS2532L-1-V PS2532L1-1-V PS2532L2-1-V PS2532-2-V PS2532L-2-V PS2532-4-V PS2532L-4-V Package 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP (for long distance) 4-pin DIP (for long distance surface mount) 8-pin DIP 8-pin DIP (lead bending surface mount) 16-pin DIP 16-pin DIP (lead bending surface mount) 4-pin DIP 4-pin DIP (lead bending surface mount) 4-pin DIP (for long distance) 4-pin DIP (for long distance surface mount) 8-pin DIP 8-pin DIP (lead bending surface mount) 16-pin DIP 16-pin DIP (lead bending surface mount) VDE0884 approved products (Option) Safety Standard Approval Standard products (UL, BSI, NEMKO, SEMKO, DEMKO, FIMKO approved) Application Part Number PS2532-1 *1 PS2532-2 PS2532-4 PS2532-1 PS2532-2 PS2532-4 *1 As applying to Safety Standard, following part number should be used. 5 PS2532-1,-2,-4,PS2532L-1,-2,-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Parameter Symbol PS2532-1, PS2532L-1 80 6 1.5 150 1 300 0.6 150 3.0 300 5 000 *3 3 750 −55 to +100 −55 to +150 2.4 240 1.2 120 PS2532-2, -4, PS2532L-2, -4 Unit Diode Forward Current (DC) Reverse Voltage Power Dissipation Derating Power Dissipation Peak Forward Current *1 IF VR mA V mW°C mW/ch A V V mA/ch mW/°C mW/ch Vr.m.s. °C °C ∆PD/°C PD IFP VCEO VECO IC Transistor Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation ∆PC/°C PC BV TA Tstg Isolation Voltage *2 Operating Ambient Temperature Storage Temperature *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output *3 VDE0884 approved products (Option) 6 PS2532-1,-2,-4,PS2532L-1,-2,-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Forward Voltage Reverse Current Terminal Capacitance Transistor Coupled Collector to Emitter Dark Current Current Transfer Ratio (IC/IF) Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time *1 Symbol VF IR Ct ICEO CTR VCE (sat) RI-O CI-O tr tf IF = 10 mA VR = 5 V Conditions MIN. TYP. 1.15 MAX. 1.40 5 Unit V µA pF V = 0 V, f = 1.0 MHz VCE = 300 V, IF = 0 mA IF = 1 mA, VCE = 2 V IF = 1 mA, IC = 2 mA VI-O = 1.0 kVDC V = 0 V, f = 1.0 MHz VCC = 5 V, IC = 10 mA, RL = 100 Ω 10 11 30 400 1 500 4 000 6 500 1.0 nA % V Ω 0.6 100 100 pF µs *1 *1 Test circuit for switching time Pulse input (PW = 1 ms, Duty cycle = 1/10) IF 50 Ω VOUT RL = 100 Ω VCC 7 PS2532-1,-2,-4,PS2532L-1,-2,-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 400 150 Diode Power Dissipation PD (mW) 100 PS2532-2, -4 PS2532L-2, -4 50 PS2532-1 PS2532L-1 1.5 mW/˚C 300 PS2532-1 PS2532L-1 200 PS2532-2, -4 PS2532L-2, -4 100 2.4 mW/˚C 3.0 mW/˚C 1.2 mW/˚C 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 TA = +100 ˚C +75 ˚C +50 ˚C +25 ˚C 0 ˚C –25 ˚C –55 ˚C COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 160 140 Collector Current IC (mA) 5.0 Forward Current IF (mA) 10 120 100 80 60 40 20 4.5 mA mA mA 4.0 mA 3.5 mA 3.0 1 mA 2.5 A 2.0 m 1.5 mA 0.1 1.0 mA IF = 0.5 mA 1 2 3 4 5 6 7 8 0.01 0.6 0.8 1.0 1.2 1.4 1.6 0 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE Collector to Emitter Dark Current ICEO (A) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 500 10 µ 1µ 100 n 10 n 1n 100 p VCE = 300 V Collector Current IC (mA) 100 50 10 5 1 0.5 0.1 0.0 mA IF = 5.0 A 2.0 m 1.0 mA 0.5 mA –50 –25 0 25 50 75 100 0.2 0.4 0.6 0.8 1.0 1.2 Ambient Temperature TA (˚C) Collector Saturation Voltage VCE(sat) (V) 8 PS2532-1,-2,-4,PS2532L-1,-2,-4 NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE Normalized Current Transfer Ratio CTR CURRENT TRANSFER RATIO vs. FORWARD CURRENT 5 000 Current Transfer Ratio CTR (%) 1.2 1.0 0.8 0.6 0.4 0.2 0.0 ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, ,,,,,,,,,,,,,,,, Normalized to 1.0 at TA = 25 ˚C, IF = 1 mA, VCE = 2 V 50 75 –50 –25 0 25 100 Ambient Temperature TA (˚C) VCE = 2 V Sample A Sample B 4 000 3 000 2 000 1 000 0 0.1 0.5 1 5 10 15 Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE 500 VCC = 10 V, IC = 10 mA 5 tr 0 Normalized Gain Gv FREQUENCY RESPONSE Switching Time t (µs) 100 50 td tf 10 5 ts 1 20 –5 –10 RL = 1 k Ω 100 Ω 10 Ω VCE = 4 V, Vin = 0.1 Vp-p –15 –20 –25 1 kΩ 1 µF Vin 47 Ω RL Vout 1 10 100 50 100 200 500 1k 2k –30 0.01 0.1 Load Resistance RL (Ω) Frequency f (kHz) LONG TERM CTR DEGRADATION 1.2 1.0 CTR (Relative Value) 0.8 0.6 0.4 0.2 0.0 10 IF = 1 mA, TA = 25 ˚C IF = 1 mA, TA = 60 ˚C 102 103 104 105 106 Time (Hr) Remark The graphs indicate nominal characteristics. 9 PS2532-1,-2,-4,PS2532L-1,-2,-4 TAPING SPECIFICATIONS (in millimeters) Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 1.75±0.1 1.55±0.1 4.3±0.2 7.5±0.1 16.0±0.3 1.55±0.1 8.0±0.1 0.3 5.6±0.1 Tape Direction PS2532L-1-E3, F3 PS2532L-1-E4, F4 Outline and Dimensions (Reel) 2.0±0.5 φ 13.0±0.5 PS2532L-1-E3, E4: φ 250 PS2532L-1-F3, F4: φ 330 R 1.0 φ 21.0±0.8 φ 80.0±5.0 10.3±0.1 16.4+2.0 –0.0 Packing: PS2532L-1-E3, E4 1 000 pcs/reel PS2532L-1-F3, F4 2 000 pcs/reel 10 PS2532-1,-2,-4,PS2532L-1,-2,-4 Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 1.75±0.1 1.55±0.1 4.3±0.2 16.0±0.3 10.3±0.1 7.5±0.1 1.55±0.1 12.0±0.1 10.4±0.1 0.3 Tape Direction PS2532L-2-E3 PS2532L-2-E4 Outline and Dimensions (Reel) 2.0±0.5 φ 13.0±0.5 R 1.0 φ 21.0±0.8 φ 80.0±5.0 φ 330 16.4+2.0 –0.0 Packing: 1 000 pcs/reel 11 PS2532-1,-2,-4,PS2532L-1,-2,-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature • Time of temperature higher than 210 °C • Number of reflows • Flux 235 °C (package surface temperature) 30 seconds or less Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T (˚C) (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (preheating) Time (s) Peak temperature 235 ˚C or below (2) Dip soldering • Temperature • Time • Number of times • Flux 260 °C or below (molten solder temperature) 10 seconds or less One Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 12 PS2532-1,-2,-4,PS2532L-1,-2,-4 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Application classification (DIN VDE 0109) for rated line voltages ≤ 300 Vr.m.s. for rated line voltages ≤ 600 Vr.m.s. Climatic test class (DIN IEC 68 Teil 1/09.80) Dielectric strength maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) Upr = 1.2 × UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for random test) Upr = 1.6 × UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) Clearance distance Creepage distance Comparative tracking index (DIN IEC 112/VDE 0303 part 1) Material group (DIN VDE 0109) Storage temperature range Operating temperature range Isolation resistance, minimum value VIO = 500 V dc at TA = 25 °C VIO = 500 V dc at TA MAX. at least 100 °C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Package temperature Current (input current IF, Psi = 0) Power (output or total power dissipation) Isolation resistance VIO = 500 V dc at TA = 175 °C (Tsi) Tstg TA CTI Symbol Speck Unit IV III 55/100/21 UIORM Upr 890 1 068 Vpeak Vpeak Upr 1 424 Vpeak UTR 6 000 2 > 7.0 > 7.0 175 III a −55 to +150 –55 to +100 Vpeak mm mm °C °C Ω Ω Ris MIN. Ris MIN. 10 11 10 12 Tsi Isi Psi Ris MIN. 175 400 700 10 9 °C mA mW Ω 13 PS2532-1,-2,-4,PS2532L-1,-2,-4 APPLICATION FOR TELEPHONE (EXAMPLE) LINE Bell Ringing Signal (75 Vr.m.s., 16 Hz) PS2505-1, PS2506-1 PS2605, PS2606 PS2607, PS2608 etc. VCC Bell Ringing Detect PS2521 PS2525 Line Observe VCC Dial Pulse PS2532 Generator PS2533 Dialer Circuit CPU Photo MOS FET Speech Circuit IN OUT 14 PS2532-1,-2,-4,PS2532L-1,-2,-4 [MEMO] 15 PS2532-1,-2,-4,PS2532L-1,-2,-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5