PS2711-1-F3

DATA SHEET PHOTOCOUPLER PS2711-1 HIGH CTR 4-PIN SOP PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2711-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications. The package is an SOP (Small Outline Package) type for high density mounting applications. FEATURES • High current transfer ratio (CTR = 200 % TYP. @ IF = 1mA) • High isolation voltage (BV = 3 750 Vr.m.s.) • Small and thin package (4-pin SOP) • Ordering number of tape product: PS2711-1-F3, F4 • UL approved: File No. E72422 (S) APPLICATIONS • Programmable logic controllers • Small power supply • Hybrid IC • Modem/FAX The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14945EJ1V0DS00 (1st edition) Date Published July 2000 NS CP(K) Printed in Japan © 2000 PS2711-1 PACKAGE DIMENSIONS in millimeters 4±0.5 TOP VIEW 4 3 1. Anode 2. Cathode 3. Emitter 4. Collector 1 2 7.0±0.3 4.4 2.1±0.2 0.1±0.1 2.54 0.4 +0.10 –0.05 0.15 +0.10 –0.05 0.5±0.3 0.25 M MARKING No. 1 pin Mark 2711 N003 Trade Mark Type Number Assembly Lot N 0 03 Week Assembled Year Assembled (Last 1 Digit) CTR Rank Name 2 Data Sheet P14945EJ1V0DS00 PS2711-1 ORDERING INFORMATION Part Number PS2711-1 PS2711-1-F3 PS2711-1-F4 Package 4-pin SOP Packing Style 50 pcs (Tape 50 pcs cut) Embossed Tape 3 500 pcs/reel Safety Standards Approval UL approved Application Part *1 Number PS2711-1 *1 For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Parameter Diode Forward Current (DC) Reverse Voltage Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Symbol IF VR Ratings 50 6 0.8 80 0.5 40 5 40 1.5 150 3 750 –55 to +100 –55 to +150 Unit mA V mW/°C mW A V V mA mW/°C mW Vr.m.s. °C °C ∆PD/°C PD IFP VCEO VECO IC Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation ∆PC/°C PC BV TA Tstg Isolation Voltage *2 Operating Ambient Temperature Storage Temperature *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output Data Sheet P14945EJ1V0DS00 3 PS2711-1 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Forward Voltage Reverse Current Terminal Capacitance Transistor Collector to Emitter Dark Current Current Transfer Ratio *1 (IC/IF) Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time *2 Symbol VF IR Ct ICEO I F = 5 mA VR = 5 V Conditions MIN. TYP. 1.15 MAX. 1.4 5 Unit V µA pF V = 0 V, f = 1 MHz IF = 0 mA, VCE = 40 V 30 100 nA Coupled CTR IF = 1 mA, VCE = 5 V 100 200 400 % VCE (sat) RI-O CI-O tr tf IF = 1 mA, IC = 0.2 mA VI-O = 1 kVDC V = 0 V, f = 1 MHz VCC = 5 V, IC = 2 mA, RL = 100 Ω 10 11 0.3 V Ω 0.4 4 5 pF µs *2 *1 CTR rank N : 100 to 400 (%) K : 200 to 400 (%) L : 150 to 300 (%) M : 100 to 200 (%) *2 Test circuit for switching time Pulse Input PW = 100 µ s Duty cycle = 1/10 IF In monitor 50 Ω RL = 100 Ω VOUT VCC 4 Data Sheet P14945EJ1V0DS00 PS2711-1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 100 Diode Power Dissipation PD (mW) 80 150 60 100 40 20 50 0 25 50 75 100 0 25 50 75 100 Ambient Temperature TA (˚C) Ambient Temperature TA (˚C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 Collector to Emitter Dark Current ICEO (nA) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 10 000 Forward Current IF (mA) 10 1 000 VCE = 40 V 20 V 10 V TA = +100 ˚C +60 ˚C +25 ˚C 1 0 ˚C –25 ˚C –50 ˚C 100 0.1 10 0.01 0.0 0.5 1.0 1.5 2.0 1 –25 0 25 50 75 100 Forward Voltage VF (V) Ambient Temperature TA (˚C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 IF = 10 mA Collector Current IC (mA) Collector Current IC (mA) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 100 10 mA 5 mA 2 mA 10 1 mA 1 IF = 0.5mA 20 5 mA 15 10 2 mA 5 1 mA 0.5 mA 0 2 4 6 8 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Collector to Emitter Voltage VCE (V) Collector Saturation Voltage VCE(sat) (V) Data Sheet P14945EJ1V0DS00 5               NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE Normalized Current Transfer Ratio CTR 1.6 500 1.4 1.2 PS2711-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT Current Transfer Ratio CTR (%) VCE = 5 V, n=3 400 1.0 300 0.8 0.6 200 0.4 0.2 Normalized to 1.0 at TA = 25 ˚C, IF = 1 mA, VCE = 5 V 50 75 100 0.0 –50 –25 0 25 100 0 0.01 0.1 1 10 100 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE IF = 1 mA, VCC = 5 V, CTR = 200 % tf 100 IC = 2 mA, VCC = 5 V, CTR = 200 % 1 000 Switching Time t (µs) Switching Time t (µ s) 100 10 ts tr td tf tr 10 td 1 1 ts 0.1 10 100 1k 10 k 0.1 100 1k 10 k 100 k Load Resistance RL (kΩ) Load Resistance RL (kΩ) FREQUENCY RESPONSE LONG TERM CTR DEGRADATION IF = 1 mA 1.2 1.0 0 –5 –10 –15 –20 –25 0.1 300 Ω CTR (Relative Value) Normalized Gain Gv RL = 1 kΩ 100 Ω 0.8 TA = 25 ˚C 0.6 0.4 0.2 0 10 TA = 60 ˚C 1 10 Frequency f (kHz) 100 1 000 102 103 104 105 106 Time (Hr) Remark The graphs indicate nominal characteristics. 6 Data Sheet P14945EJ1V0DS00 PS2711-1 TAPING SPECIFICATIONS (in millimeters) Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 1.75±0.1 1.55±0.1 2.4±0.1 12.0±0.2 5.5±0.1 1.55±0.1 8.0±0.1 4.6±0.1 0.3 Tape Direction PS2711-1-F3 PS2711-1-F4 Outline and Dimensions (Reel) 1.5 120 ˚ φ 21.0±0.8 7.4±0.1 1.5±0.5 60 ˚ 6.0±1 φ 330 2.0±0.5 φ 13.0±0.5 φ 80±5.0 12.4+2.0 –0.0 Packing: 3 500 pcs/reel Data Sheet P14945EJ1V0DS00 7 PS2711-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering • Peak reflow temperature • Time of temperature higher than 210 °C • Number of reflows • Flux 235 °C or below (package surface temperature) 30 seconds or less Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T (˚C) (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 100 to 160 ˚C 60 to 120 s (preheating) Time (s) (2) Dip soldering • Temperature • Time • Number of times • Flux 260 °C or below (molten solder temperature) 10 seconds or less One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between corrector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 8 Data Sheet P14945EJ1V0DS00 PS2711-1 [MEMO] Data Sheet P14945EJ1V0DS00 9 PS2711-1 [MEMO] 10 Data Sheet P14945EJ1V0DS00 PS2711-1 [MEMO] Data Sheet P14945EJ1V0DS00 11 PS2711-1 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. • The information in this document is current as of July, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. 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