PS2811-1-F4

DATA SHEET PHOTOCOUPLER PS2811-1,PS2811-4 HIGH CTR 4, 16-PIN SOP PHOTOCOUPLER −NEPOC TM Series− DESCRIPTION The PS2811-1 and PS2811-4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP for high density applications. The package is an SOP (Small Outline Package) type for high density mounting applications. FEATURES • High current transfer ratio (CTR = 200 % TYP. @ IF = 1mA) • High isolation voltage (BV = 2 500 Vr.m.s.) • Small and thin package (4, 16-pin SOP, Pin pitch 1.27 mm) • Ordering number of taping product: PS2811-1-F3, F4, PS2811-4-F3, F4 APPLICATIONS • Programmable logic controllers • Small power supply • Hybrid IC • Modem/FAX The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14763EJ1V0DS00 (1st edition) Date Published April 2000 NS CP(K) Printed in Japan © 2000 PS2811-1,PS2811-4 PACKAGE DIMENSIONS (in millimeters) PS2811-1 2.7±0.3 43 43 10.3±0.3 16 PS2811-4 16 15 14 13 12 11 10 9 9 12 1. Anode 2. Cathode 3. Emitter 4. Collector 7.0±0.3 4.4 12345678 1. 3. 5. 7. 2. 4. 6. 8. 9. 11. 13. 15. 10. 12. 14. 16. Anode Cathode Emitter Collector 1 2 1 8 0.1±0.1 0.15 +0.10 –0.05 2 +0.3 –0.2 2 +0.3 –0.2 0.15 +0.10 –0.05 1.3 7.0±0.3 4.4 1.3 0.1±0.1 0.5±0.3 0.4±0.1 1.27 0.12 M 0.5±0.3 1.27 0.4±0.1 0.12 M MARKING PS2811-1 PS2811-4 11 JAPAN 503 Assembly lot No. 1 pin Mark PS2811-4 N 503 Company & Country Name Type Number Assembly lot Last number of type No. : 11 5 03 Serial Code in week Assembly Year N 5 03 Serial Code in week Assembly Year CTR Rank Name 2 Data Sheet P14763EJ1V0DS00 PS2811-1,PS2811-4 ORDERING INFORMATION Part Number PS2811-1 PS2811-1-F3 PS2811-1-F4 PS2811-4 PS2811-4-F3 PS2811-4-F4 16-pin SOP Magazine Case 45 pcs Embossed Tape 2 500 pcs/reel PS2811-4 Package 4-pin SOP Packing Style 50 pcs (Tape 50 pcs cut) Embossed Tape 3 500 pcs/reel Safety Standards Approval UL, BSI approved Application Part *1 Number PS2811-1 *1 For the application of the Safety Standard, following part number should be used. Data Sheet P14763EJ1V0DS00 3 PS2811-1,PS2811-4 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified) Ratings Parameter Diode Forward Current (DC) Reverse Voltage Power Dissipation Derating Power Dissipation Peak Forward Current Transistor *1 Symbol PS2811-1 IF VR 50 6 0.6 60 0.5 40 5 40 1.2 120 2 500 −55 to +100 −55 to +150 0.7 70 PS2811-4 Unit mA V mW/°C mW/ch A V V mA/ch mW/°C mW/ch Vr.m.s. °C °C ∆PD/°C PD IFP VCEO VECO IC Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation Derating Power Dissipation ∆PC/°C PC BV TA Tstg Isolation Voltage *2 Operating Ambient Temperature Storage Temperature *1 PW = 100 µs, Duty Cycle = 1 % *2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output 4 Data Sheet P14763EJ1V0DS00 PS2811-1,PS2811-4 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Parameter Diode Forward Voltage Reverse Current Terminal Capacitance Transistor Coupled Collector to Emitter Current Current Transfer Ratio *1 (IC/IF) Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time *2 Symbol VF IR Ct ICEO CTR I F = 5 mA VR = 5 V Conditions MIN. TYP. 1.15 MAX. 1.4 5 Unit V µA pF V = 0 V, f = 1 MHz IF = 0 mA, VCE = 40 V IF = 1 mA, VCE = 5 V 100 30 100 200 400 nA % VCE (sat) RI-O CI-O tr tf IF = 1 mA, IC = 0.2 mA VI-O = 1 kVDC V = 0 V, f = 1 MHz VCC = 5 V, IC = 2 mA, RL = 100 Ω 10 11 0.3 V Ω 0.4 4 5 pF µs *2 *1 CTR rank PS2811-1 N : 100 to 400 (%) K : 200 to 400 (%) L : 150 to 300 (%) M : 100 to 200 (%) PS2811-4 N : 100 to 400 (%) *2 Test circuit for switching time Pulse Input PW = 100 µs Duty cycle = 1/10 IF In monitor 50 Ω RL = 100 Ω VOUT VCC Data Sheet P14763EJ1V0DS00 5 PS2811-1,PS2811-4 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 140 120 100 80 60 40 20 0 25 50 75 100 125 80 Diode Power Dissipation PD (mW) 60 PS2811-4 0.7 mW/˚C 40 PS2811-1 0.6 mW/˚C 20 0 25 50 75 100 Ambient Temperature TA (˚C) Ambient Temperature TA ( ˚C) FORWARD CURRENT vs. FORWARD VOLTAGE 100 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 IF = 20 mA 10 mA 10 TA = +100 ˚C +60 ˚C +25 ˚C Collector Current IC (mA) Forward Current IF (mA) 20 15 5 mA 1 0 ˚C –25 ˚C –50 ˚C 10 2 mA 5 1 mA 0.5 mA 0.1 0.01 0.0 0.5 1.0 1.5 2.0 0 2 4 6 8 10 Forward Voltage VF (V) Collector to Emitter Voltage VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE Collector to Emitter Dark Current ICEO (nA) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 100 10 mA 5 mA 2 mA 10 1 mA 1 IF = 0.5mA 10 000 1 000 VCE = 20 V 40 V 100 10 1 –25 Collector Current IC (mA) 0 25 50 75 100 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Ambient Temperature TA (˚C) Collector Saturation Voltage VCE(sat) (V) 6 Data Sheet P14763EJ1V0DS00            NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE Normalized Current Transfer Ratio CTR 1.4 1.2 1.0 0.8 PS2811-1,PS2811-4 CURRENT TRANSFER RATIO vs. FORWARD CURRENT Current Transfer Ratio CTR (%) 300 VCE = 5 V, n=3 250 200 150 100 50 0.6 0.4 0.2 Normalized to 1.0 at TA = 25 ˚C, IF = 1 mA, VCE = 5 V 50 75 0.0 –50 –25 0 25 100 0.02 0.1 1.0 10 100 Ambient Temperature TA (˚C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE SWITCHING TIME vs. LOAD RESISTANCE IF = 1 mA, VCC = 5 V, CTR = 200 % tf 100 IC = 2 mA, VCC = 5 V, CTR = 200 % 1 000 Switching Time t (µs) Switching Time t (µ s) 100 10 ts tr td tf tr 10 td 1 1 ts 0.1 10 100 1k 10 k 0.1 100 1k 10 k 100 k Load Resistance RL (kΩ) Load Resistance RL (kΩ) FREQUENCY RESPONSE LONG TERM CTR DEGRADATION IF = 1 mA 1.2 1.0 0 –5 –10 –15 –20 –25 0.1 300 Ω CTR (Relative Value) Normalized Gain Gv RL = 1 kΩ 100 Ω 0.8 TA = 25 ˚C 0.6 0.4 0.2 0 10 TA = 60 ˚C 1 10 Frequency f (kHz) 100 1 000 102 103 104 105 106 Time (Hr) Remark The graphs indicate nominal characteristics. Data Sheet P14763EJ1V0DS00 7 PS2811-1,PS2811-4 TAPING SPECIFICATIONS (in millimeters) PS2811-1 Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 1.55±0.1 1.75±0.1 2.5±0.1 16.0±0.3 7.5±0.1 0.3 1.55±0.1 4.0±0.1 3.3±0.1 Tape Direction PS2811-1-F3 PS2811-1-F4 11503 11503 11503 11503 Outline and Dimensions (Reel) 2.5 2.0±0.5 φ13.0±0.5 R 1.0 φ 21.0±0.8 φ 100±5.0 φ 330 11503 7.5±0.1 11503 Packing: 3 500 pcs/reel 11503 11503 11503 11503 16.4 +2.0 –0.0 8 Data Sheet P14763EJ1V0DS00 PS2811-1,PS2811-4 PS2811-4 Outline and Dimensions (Tape) 2.0±0.1 4.0±0.1 1.75±0.1 1.55±0.1 2.5±0.1 7.5±0.1 16.0±0.3 1.55±0.1 12.0±0.1 7.6±0.1 0.3 Tape Direction PS2811-4-F3 PS2811-4-F4 Outline and Dimensions (Reel) 2.5 2.0±0.5 φ13.0±0.5 R 1.0 φ 21.0±0.8 φ 100±5.0 φ 330 10.45±0.1 16.4 +2.0 –0.0 Packing: 2 500 pcs/reel Data Sheet P14763EJ1V0DS00 9 PS2811-1,PS2811-4 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature • Time of temperature higher than 210 °C • Number of reflows • Flux 235 °C or below (package surface temperature) 30 seconds or less Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T (˚C) (heating) to 10 s 235 ˚C (peak temperature) 210 ˚C to 30 s 100 to 160 ˚C 60 to 120 s (preheating) Time (s) (2) Dip soldering • Temperature • Time • Number of times • Flux 260 °C or below (molten solder temperature) 10 seconds or less One Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended.) (3) Cautions • Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 10 Data Sheet P14763EJ1V0DS00 PS2811-1,PS2811-4 [MEMO] Data Sheet P14763EJ1V0DS00 11 PS2811-1,PS2811-4 CAUTION Within this device there exists GaAs (Gallium Arsenide) material which is a harmful substance if ingested. Please do not under any circumstances break the hermetic seal. NEPOC is a trademark of NEC Corporation. • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • D escriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. 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