PS2932-1

HIGH COLLECTOR TO EMITTER VOLTAGE 4 PIN ULTRA SMALL FLAT LEAD OPTOCOUPLER FEATURES • ULTRA SMALL FLAT LEAD PACKAGE: 4.6 (L) x 2.5 (W) x 2.1 (H) mm • ISOLATION DISTANCE: 0.4 mm MIN • HIGH COLLECTOR TO EMITTER VOLTAGE: VCEO = 300 V: PS2932-1 VCEO = 350 V: PS2933-1 • HIGH ISOLATION VOLTAGE BV = 2500 Vr.m.s. • AVAILABLE ON TAPE AND REEL: PS2932-1-F3, F4: 3500 pcs/reel PS2933-1-F3, F4: 3500 pcs/reel PS2932-1 PS2933-1 DESCRIPTION The PS2932-1 and PS2933-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in one package for high density mounting applications. This device is housed in an ultra-small flat-lead package which realizes a reduction in mounting area of about 30% compared to the PS28xx series. APPLICATIONS • • HYBRID IC TELEPHONE, EXCHANGE EQUIPMENT, FAX ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER SYMBOLS PARAMETERS Forward Voltage, IF = 1 mA Reverse Current, VR = 5 V Terminal Capacitance, V = 0 V, f = 1.0 MHz Collector to Emitter Current, VCE = 300 V (350 V)1 Current Transfer Ratio (IC/IF), IF = 1 mA, VCE = 2 V Collector Saturation Voltage, IF = 1 mA, IC = 2 mA Isolation Resistance, VI-O = 1.0 kVDC Isolation Capacitance, V = 0 V, f = 1.0 MHz Rise Time2 Fall Time2 VCC = 5 V, IC = 10 mA, RL = 100 Ω UNITS V µA pF nA % V Ω pF µs µs 1011 0.4 20 5 400 2000 0.8 15 400 4500 1 MIN 0.9 VF IR CT ICEO CTR VCE(sat) PS2932-1, PS2933-1 TYP 1.1 MAX 1.3 5 Coupled Transistor Diode RI-O CI-O tr tF Notes 1. ICEO condition : PS2932-1: VCE = 300 V: PS2933-1: VCE = 350 V: 2. Test circuit for switching time: Pulse Input VCC ( PW = 1 ms Duty cycle = 1/10 ( IF VOUT 50 Ω RL = 100 Ω California Eastern Laboratories PS2932-1, PS2933-1 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C unless otherwise specified) SYMBOLS Diode IF ∆IF/°C IF (Peak) PD VR PARAMETERS Forward Current (DC) Forward Current Derating Peak Forward Current2 Power Dissipation Reverse Voltage UNITS mA mA/°C A mW V RATINGS 50 0.5 0.5 60 6 PARAMETER Air Distance Creepage Distance Isolation Distance UNIT (MIN) 4 mm 4 mm 0.4 mm OPTOCOUPLER CONSTRUCTION Transistor VCEO Collector to Emitter Voltage PS2932-1 PS2933-1 Emitter to Collector Voltage VECO IC Collector Current PC Power Dissipation ∆PC/ûC Power Dissipation Derating Coupled VISO Isolation Voltage3 PT Total Power Dissipation Operating Ambient Temp. TA TSTG Storage Temperature OUTLINE DIMENSIONS (Units in mm) 2.5±0.3 4 3 V V mA mW mW/ûC Vr.m.s. mW °C °C 4.6±0.2 N 2500 160 -55 to +100 -55 to +150 2.1 MAX 1 2 5.0±0.2 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. PW = 100 µs, Duty Cycle = 1%. 3. AC voltage for 1 minute at TA = 25°C, RH = 60 % between input and output. CAUTIONS REGARDING NOISE: Be aware that when voltage is applied suddenly between the optocoupler's input and outout or between collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute maximum ratings. 0.4±0.1 1.27 0.15 -0.05 +0.1 0.2±0.1 TOP VIEW 1. Anode 2. Cathode 3. Emitter 4. Collector ORDERING INFORMATION PART NUMBER PS29132-1-F3 PS2932-1-F4 PS29133-1-F3 PS29133-1-F4 PACKING STYLE Embossed Tape 3500 pcs/reel MARKING RECOMMENDED MOUNT PAD DIMENSIONS (Units in mm) 1.27 (0.35) 32 N 001 No. 1 pin mark (nicked corner) 0 –Last number of Type No: 32 –An initial of "NEC" 0.8 0.6 –Assembly lot 01 Week assembled Year assembled 4.14 4.7 5.7 ( ): Reference value 24-R0.1 Remark: This drawing is considered to meet air and outer creepage distance 4.0 mm minimum. All simensions in this figure must be evaluated before use. 4.1 MIN 300 350 0.3 60 120 1.2 PS2932-1, PS2933-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE 140 Transistor Power Dissipation, PC (mW) 80 Maximum Forward Current, IF (mA) 120 100 80 60 1.2 mW/°C 40 60 40 0.5 mA/°C 20 20 0 25 50 75 100 125 0 25 50 75 100 125 Ambient Temperature, TA (°C) Ambient Temperature, TA (°C) FORWARD CURRENTvs. FORWARD VOLTAGE 100 60 COLLECTOR CURRENTvs. COLLECTOR TO EMITTER VOLTAGE IF = 5 MA Forward Current, IF (mA) 10 Collector Current, IC (V) TA = +100°C +60°C +25°C 0°C -25°C -50°C 50 2 mA 40 1 30 1 mA 20 0.1 10 0.5 mA 0.01 0.0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 Forward Voltage, VF (V) Collector to Emitter Voltage, VCE (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 100 Collector to Emitter Dark Current, ICEO (nA) 100000 VCEO = 300 V CTR = 1068% 1000 2290% 4360% 100 Collector Current, IC (mA) 10000 10 IF = 5 mA 2 mA 1 mA 0.5 mA 10 1 -50 -25 0 25 50 75 100 1 0.7 0.8 0.9 1.0 Ambient Temperature, TA (°C) CollectorSaturation Voltage, VCE(sat) (V) PS2932-1, PS2933-1 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs. FORWARD CURRENT 4000 VCE = 2 V Normalized Current Transfer Ratio, CTR 1.4 Current Transfer Ratio, CTR (%) 1.2 1.0 3500 3000 2500 C 2000 1500 1000 500 0 0.1 Sample A B 0.8 0.6 0.4 0.2 0.0 -50 Normalized to 1.0 at TA = 25°C, IF = 1 mA, VCE = 2 V -25 0 25 50 75 100 1 10 100 Ambient Temperature, TA (°C) Forward Current, IF (mA) SWITCHING TIME vs. LOAD RESISTANCE 1000 LONG TERM CTR DEGRADATION 1.2 IF = 1 mA 1.0 TA = 25°C VCC = 5 V, IC = 10 mA, CTR = 200 % Switching Time, t (µs) CTR (relative Value) 100 tr tf 0.8 60°C 0.6 10 ts td 0.4 1 0.2 0.1 100 1000 0.0 10 10 2 10 3 10 4 10 5 10 6 Load Resistance, RL (Ω) Time (Hr) REMARK: The graphs indicate nominal characteristics. PS2932-1, PS2933-1 TAPING SPECIFICATIONS (Units in mm) Tape Outline and Dimensions 2.0 ± 0.5 4.0 ± 0.1 1.5 -0 +0.1 1.75 ± 0.1 2.9 MAX 5.5 ± 0.1 12.0 ± 0.2 5.3 ± 0.1 2.4±0.1 1.55 ± 0.05 4.0 ± 0.1 2.9 ± 0.1 Tape Direction PS2932-1-F3 PS2933-1-F3 PS2932-1-F4 PS2933-1-F4 N N N N Reel Outline and Dimensions 2.0±0.5 2.0 ± 0.5 φ13.0 ± 0.2 φ330±2.0 φ100 ± 1.0 R1.0 φ21.0 ± 0.8 Packing: 3500 pcs/reel N N N N 13.5±1.0 11.9 to 15.4 Outer edge of flange PS2932-1, PS2933-1 RECOMMENDED SOLDERING CONDITIONS (1) Infrared reflow soldering • Peak reflow temperature • Time of peak reflow temperature • Time of temperature higher than 220 ûC • Time to preheat temperature from 120 to 180°C • Number of reflows • Flux 260 ûC or below (package surface temperature) 10 seconds or less 60 seconds or less 120±30 s Three Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). Recommended Temperature Profile of Infrared Reflow Package Surface Temperature T (˚C) (heating) to 10 s 260 ˚C (peak temperature) 220 ˚C to 60 s 180 ˚C 120˚C 120±30 s (preheating) Time (s) (2) Wave soldering • Temperature • Time • Preheating conditions • Number of times • Flux 260 ûC or below (molten solder temperature) 10 seconds or less 120°C or below (package surface temperature) One (Allowed to be dipped in solder including plastic mold portion.) Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt % is recommended). (3) Cautions • Fluxes USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature ad high humidity. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://WWW.CEL.COM 02/06/2002 Avoid removing the residual flux with chlorine-based cleaning solvent after a reflow process.