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PS9601

PS9601

  • 厂商:

    NEC(日电电子)

  • 封装:

  • 描述:

    PS9601 - HIGH ISOLATION VOLTAGE HIGH SPEED PHOTOCOUPLER - NEC

  • 数据手册
  • 价格&库存
PS9601 数据手册
DATA SHEET PHOTOCOUPLERS PS9601, PS9601L HIGH ISOLATION VOLTAGE HIGH SPEED PHOTOCOUPLER PS9601, PS9601L are optically coupled isolators containing a GaAlAs LED on light emitting side (input side) and a photodiode and a signal processing circuit on light receiving side (output side) on one chip. PS9601 is in a plastic DIP (Dual In-line Package) and PS9601L is lead bending type (Gull-wing) for surface mount. FEATURES • High isolation voltage • High Propagation delay time • Low input current BV: 5 000 Vr.m.s. MIN. tPHL, tPLH: 50 ns TYP. IFHL: 2.5 mA TYP. • Can be soldered by infrared reflow soldering • Taping product number PS9601L-E3, E4 • UL recognized File No. E72422 (S) APPLICATIONS • Computer and peripheral memory • Electronic instrument • Audio-visual Document No. P10744EJ2V0DS00 (2nd edition) (Previous No. LC-7694) Date Published September 1995 P Printed in Japan © 1993 PS9601, PS9601L PACKAGE DIMENSIONS (Unit: mm) PS9601 10.16 MAX. 8 5 PIN CONNECTIONS (Top View) 8 VCC 7 6 5 GND 3.8 MAX. 1 4 7.62 6.5 1 2 3 4 2.8 4.55 MIN. MAX. 0.65 1.34 1.27 MAX. 2.54 0.50 ±0.10 0.25 M 0 to 15˚ PS9601L 10.16 MAX. 8 5 PIN INPUT 1. 2. 3. 4. 5. 6. 7. 8. Function NC Anode Cathode NC GND VO VE * VCC 1 4 6.5 3.8 MAX. 1.27 MAX. 2.54 1.34 ±0.10 0.25 M 9.60 ±0.4 0.05 to 0.2 7.62 OUTPUT *VE is pulled-up to 0.9 ±0.25 2 PS9601, PS9601L ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Diode Forward Current Reverse Voltage Power Dissipation Detector Supply Voltage Output Voltage Output Current Enable Voltage Power Dissipation Isolation Voltage *1 Operating Temperature Storage Temperature VCC VO IO VE PC BV Topt Tstg 7 7 50 5.5 85 5 000 –40 to +85 –55 to +125 V V mA V mW Vr.m.s. ˚C ˚C IF VR PD 30 5 60 mA V mW *1 AC voltage for 1 minute TA = 25 ˚C, RH = 60 % between input and output. RECOMMENDED OPERATING CONDITIONS (TA = 25 ˚C) PARAMETER Low Level Input Current High Level Input Current High Level Enable Voltage High Level Enable Voltage Supply Voltage Operating Temperature SYMBOL IFL IFH VEH VEL VCC Topt MIN. 0 7 2 0 4.5 0 5 25 10 TYP. MAX. 250 15 VCC 0.8 5.5 70 UNIT µA mA V V V ˚C * By-pass capacitor of more than 0.1 µF is used between VCC and GND near device. ELECTRICAL CHARACTERISTICS (TA = –40 to +85 ˚C) PARAMETER Diode Forward Voltage Reverse Current Capacitance High Level Output Current Low Level Output Voltage Detector High Level Supply Current Low Level Supply Current High Level Enable Current Low Level Enable Current SYMBOL VF IR Ct IOH VOL ICCH ICCL IEH IEL 5 10 –0.7 –1 60 2 0.2 7 13 –1 –1.4 250 0.6 10 18 –1.5 –2 MIN. 1.4 TYP. 1.65 MAX. 1.9 10 UNIT V TEST CONDITIONS IF = 10 mA, TA = 25 ˚C VR = 5 V, TA = 25 ˚C V = 0, f = 1 MHz, TA = 25 ˚C VCC = VO = 5.5 V, IF = 250 µs, VE = 2 V VCC = 5.5 V, IF = 5 mA, VE = 2 V, IO = 13 mA VCC = 5.5 V, VE = 0.5 V, IF = 0 VCC = 5.5 V, VE = 2 V, IF = 10 mA VCC = 5.5 V, VEH = 2 V VCC = 5.5 V, VEL = 0.5 V µA pF µA V mA mA mA mA 3 PS9601, PS9601L ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER Treshold Input Current High → Low Isolation Resistance Isolation Capacitance Propagation Delay Time*2 High → Low Coupled Propagation Delay Time*2 Low → High Rise Time Fall Time Enable Propagation Delay Time*3 High → Low Enable Propagation Delay Time*3 Low → High SYMBOL IFHL MIN. 0.5 1011 0.6 50 75 TYP. 2.5 MAX. 5 UNIT mA Ω pF ns TEST CONDITIONS VCC = 5 V, VE = 2 V, TA = –40 to + 85 ˚C VO = 0.8 V, RL = 350 Ω Vin-out = 1 kVDC, RH 40 to 60 % V = 0, f = 1 MHz VCC = 5 V, IF = 7.5 mA RL = 350 Ω, CL = 15 pF R1-2 C1-2 tPHL tPLH 50 75 ns tr tf tEHL 20 10 10 ns ns ns VCC = 5 V, IF = 7.5 mA VEH = 3 V, VEL = 0.5 V RL = 350 Ω, CL = 15 pF tELH 25 ns *2 Test Circuit for Propagation delay time 350 mV (IF = 7.5 mA) 175 mV (IF = 3.75 mA) Pulse Input PW = 1 µ s duty cycle = 1/10 IF Monitor 47 Ω VCC = 5 V 1 IF 2 3 4 7 6 GND 5 0.1 µF RL = 350 Ω VO Monitor *CL VCC 8 Input 0 5V Output 1.5 V VOL tPHL * CL is approximately 15 pF, which includes probe and stray wiring capacitance. tPLH *3 Test Circuit for enable Propagation delay time VE Pulse Input PW = 1 µ s duty cycle = 1/10 IF = 7.5 mA 3V 1 2 3 4 8 0.1 µ F 7 6 *CL 5 VO 1.5 V VOL 5V RL = 350 Ω VO VE Monitor tEHL tELH 1.5 V 0.5 V 5V 4 PS9601, PS9601L TYPICAL CHARACTERISTICS (TA = 25 ˚C) MAX. FORWARD CURRENT vs. AMBIENT TEMPERATURE 50 IF - MAX. Forward Current - mA PC - Power Dissipation - mA POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 40 80 30 60 20 40 10 20 0 20 40 60 80 100 0 20 40 60 80 100 TA - Ambient Temperature - ˚C FORWARD CURRENT vs. FORWARD VOLTAGE 100 IFHL - Threshold Input Current - mA TA - Ambient Temperature - ˚C THRESHOLD CURRENT vs. AMBIENT TEMPERATURE 10 VCC = 5 V VE = 2 V VO = 0.8 V RL = 350 Ω IF - Forward Current - mA 10 TA = 100 ˚C 50 ˚C 25 ˚C 0 ˚C –25 ˚C 8 6 1.0 4 0.1 2 0.01 1.0 0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 –50 –25 0 25 50 75 100 VF - Forward Voltage - V OUTPUT VOLTAGE vs. FORWARD CURRENT TA - Ambient Temperature - ˚C LOW LEVEL OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE 1.0 RL VO VOL - Low Level Output Voltage - V 7 5V 6 VO - Output Voltage - V 0.8 VCC = 5 V VE = 2 V IF = 5 mA IO = 13 mA 5 4 RL = 100 Ω 3 2 1 RL = 350 Ω RL = 1 kΩ 0.6 0.4 0.2 0 0 2 4 6 8 10 12 –50 –25 0 25 50 75 100 IF - Forward Current - mA TA - Ambient Temperature - ˚C 5 PS9601, PS9601L PROPAGATION DELAY TIME vs. FORWARD CURRENT tPHL, tPLH - Propagation Delay Time - ns PROPAGATION DELAY TIME vs. LOAD RESISTANCE VCC = 5V RL = 350 Ω tPHL, tPLH - Propagation Delay Time - ns 80 tPLH 60 1 000 500 IF = 7.5 mA VCC = 5 V PW = 1 µ s, duty 1/10 40 tPHL 20 100 50 tPLH tPHL 0 5 10 15 20 25 10 100 500 1 k 5 k 10 k 50 k IF - Forward Current - mA PROPAGATION DELAY TIME vs. AMBIENT TEMPERATURE tPHL, tPLH - Propagation Delay Time - ns RL - Load Resistance - Ω SWITCHING TIME vs. AMBIENT TEMPERATURE 25 IF = 7.5 mA VCC = 5 V RL = 350 Ω tr 120 100 80 60 40 tPHL 20 0 tPLH IF = 7.5 mA VCC = 5 V RL = 350 Ω tr, tf - Swiching Time - ns 20 15 10 tf 5 –50 –25 0 25 50 75 100 0 –50 –25 0 25 50 75 100 TA - Ambient Temperature - ˚C ENABLE PROPAGATION DELAY TIME vs. AMBIENT TEMPERATURE 60 IF = 7.5 mA VCC = 5 V VEH = 3 V VEL = 0.5 V RL = 350 Ω TA - Ambient Temperature - ˚C tEHL, tELH - Enable Propagation Delay Time - ns 40 20 tELH tEHL 0 –50 –25 0 25 50 75 100 TA - Ambient Temperature - ˚C 6 PS9601, PS9601L PRECAUTIONS IN MOUNTING THE DEVICE (1) Precautions in mounting the device by infrared reflow soldering • Peak reflow temperature • Reflow time : 235 ˚C or below (Plastic surface temperature) : 30 seconds or less (Time period during which the plastic surface temperature is 210 ˚C) • Number of reflow processes: One • Flux : Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) INFRARED RAY REFLOW TEMPERATURE PROFILE Package’s Surface Temperature (˚C) (Actual heat) to 10 s 235 ˚C Peak 210 ˚C to 30 s 120 to 160 ˚C 60 to 90 s (Pre-heat) Times (s) Peak Temperature 230 ˚C or Lower (2) Precautions in mounting the device in solder dip method • Temperature • Time • Flux : 260 ˚C or lower : 10 sec. or less : Rosin group flux, where the amount of chloride component is small. 7 PS9601, PS9601L Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2
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