UPA1428AH

DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION The µPA1428A is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on. 26.8 MAX. 4.0 PACKAGE DIMENSION (in millimeters) FEATURES 10 MIN. 2.54 1.4 0.6 ±0.2 1.4 0.5 ±0.2 1 2 3 4 5 6 7 8 9 10 ORDERING INFORMATION Part Number Package 10 Pin SIP Quality Grade Standard µPA1428AH Please refer to “Quality grade on NEC Semiconductor Device” (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 2 3 2.5 • Surge Absorber built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transistor. 10 CONNECTION DIAGRAM 5 4 6 7 8 10 9 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage Emitter to Base Voltage Surge Sustaining Energy Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature ** 4 Circuits, Ta = 25 ˚C *** 4 Cuircuits, Tc = 25 ˚C VCBO VEBO ECEO(sus) IC(DC) IC(pulse)* IB(DC) PT1** PT2*** Tj 60 ± 10 60 ± 10 8 30 ±2 ±3 0.2 3.5 28 150 V V V mJ/unit A/unit A/unit A/unit W W ˚C (E) (B) R1 R2 (C) 1 Collector to Emitter Voltage VCEO Tstg –55 to +150 ˚C PIN NO. 2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10: Emitter (E) .. R1 = 10 kΩ .. R2 = 900 Ω * PW ≤ 350 µs, Duty Cycle ≤ 2 % The information in this document is subject to change without notice. Document No. IC-3479 (O.D. No. IC-8359) Date Published September 1994 P Printed in Japan © 1994 µPA1428A ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC Collector Leakage Current Emitter Leakage Current Collector to Emitter Sustaining Voltage DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICBO IEBO VCEO(sus) 50 60 MIN. TYP. MAX. 1 5 70 UNIT TEST CONDITIONS VCB = 40 V, IE = 0 VEB = 5 V, IC = 0 IC = 1 A, L = 1 mH µA mA V hFE1 hFE2 * * 2000 500 1.0 1.7 0.4 1.5 0.4 20000 — — VCE = 2 V, IC = 1 A VCE = 2 V, IC = 2 A I C = 1 A , IB = 1 m A I C = 1 A , IB = 1 m A IC = 1 A IB1 = –IB2 = 2 mA . VCC = 50 V, R L = 50 Ω . See test circuit VCE(sat) * VBE(sat) * ton tstg tf 1.5 2 V V µs µs µs * PW ≤ 350 µ s, Duty Cycle ≤ 2 %/pulsed SWITCHING TIME TEST CIRCUIT RL = 50 Ω VIN IB1 IB2 PW PW = 50 µs Duty Cycle ≤ 2 % VBB = –5 V TUT VCC = 50 V 90 % Collector Current Wave Form ton IC 10 % tstg tf IC Base Current Wave Form IB1 IB2 2 µPA1428A TYPICAL CHARACTERISTICS (Ta = 25 ˚C) DERATING CURVE OF SAFE OPERATING AREA 5 SAFE OPERATING AREA PW dT - Percentage of Rated Current - % 100 3 = 20 2 10 0 0 s µ 80 S/ 60 bL IC - Collector Curreut - A im 1 D Limissip ite atio d n s µ 1m ite ss Di a ip n tio d s 10 s m 0.5 40 20 0.2 TC = 25 ˚C Single Pulse 5 10 0 50 100 150 0.1 20 50 70 VCEO TYP. 100 4 Circuits Operation 3 Circuits Operation 2 Circuits Operation 1 Circuit Operation 125 150 VCE ≤ 10 V 100 TC - Case Temperature - ˚C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 NEC µ PA1428A d ite m Li VCE - Collector to Emitter Voltage - V TOTAL POWER DISSIPATION vs. CASE TEMPERATURE b S/ m Li d ite PT - Total Power Dissipation - W PT - Total Power Dissipation - W 4 20 4 Circuits Operation 3 Circuits Operation 3 2 Circuits Operation 1 Circuit Operation 2 10 1 0 25 50 75 100 125 150 0 25 50 75 100 Ta - Ambient Temperature - ˚C TC - Case Temperature - ˚C DC CURRENT GAIN vs. COLLECTOR CURRENT 100000 50 VCE = 2.0 V Pulsed TRANSIENT THERMAL RESISTANCE Rth(j-c) - Transient Thermal Resistance - ˚C/W hFE - DC Current Gain 10 5 10000 T 1000 a = ˚C C 75 5 ˚ 5 ˚C 2 –2 12 5 ˚C 1 0.5 100 10 m 100 m 1 10 0.1 0.1 1 10 IC - Collector Current - A PW - Pulse Width - ms 3 µPA1428A COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 10 VCE(sat) - Collector Saturation Voltage - V IC /IB = 1000 Pulsed VBE(sat) - Base Saturation Voltage - V 10 Ta = –25 ˚C 25 ˚C 75 ˚C 125 ˚C IC /IB = 1000 Pulsed BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT 1 Ta = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1 0.1 0.1 1 IC - Collector Current - A 10 0.1 0.1 1 IC - Collector Current - A 10 SWITCHING TIME vs. COLLECTOR CURRENT 10 IC /IB = 500 IF(E-C) - Dumper Diode Forward Current - A 100 DUMPER DIODE CHARACTERISTICS ton, tstg, tf - Switching Time - µ s 10 tstg 1 tf 1 ton 100 m 0.1 0.1 10 m 1 IC - Collector Current - A 10 0 1.0 1 3.0 4.0 VF(E-C) - Dumper Diode Voltage - V 4 µPA1428A REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 5 µPA1428A [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6