UPA1728

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1728 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The µPA1728 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DRAWING (Unit : mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES • Single chip type • Low On-state Resistance 5 5 5 5 RDS(on)1 = 19 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) 1.44 1 5.37 Max. +0.10 –0.05 4 6.0 ±0.3 4.4 0.8 RDS(on)2 = 23 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) RDS(on)3 = 24 mΩ (TYP.) (VGS = 4.0 V, ID = 4.5 A) • Low Ciss : Ciss = 1700 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.8 Max. 0.15 0.05 Min. 0.5 ±0.2 0.10 1.27 0.40 0.78 Max. 0.12 M +0.10 –0.05 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 µPA1728 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg 60 ±20 ±9 ±36 2.0 150 –55 to + 150 9 8.1 2 V V A A W EQUIVALENT CIRCUIT Drain Total Power Dissipation (TA = 25 °C) Channel Temperature Storage Temperature Single Avalanche Current Note3 Note3 Gate Body Diode °C °C A mJ Gate Protection Diode IAS EAS Source Single Avalanche Energy Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 5 2. Mounted on ceramic substrate of 1200 mm x 2.2 mm 3. Starting Tch = 25°C, RG = 25 Ω, TGS = 20 V →0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14321EJ1V0DS00 (1st edition) Date Published January 2000 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1999,2000 µPA1728 5 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 10 V, ID = 4.5 A VGS = 4.5 V, ID = 4.5 A VGS = 4.0 V, ID = 4.5 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.5 A VDS = 60 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 4.5 A VGS(on) = 10 V VDD = 30 V RG = 10 Ω ID = 9 A VDD = 48 V VGS = 10 V IF = 9 A, VGS = 0 V IF = 9 A, VGS = 0 V di/dt = 100A/µs 1700 270 130 17 69 77 31 31 4.4 9.1 0.82 41 76 1.5 6.0 MIN. TYP. 19 23 24 2.0 12 10 ±10 MAX. 26 29 34 2.5 UNIT mΩ mΩ mΩ V S µA µA pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V BVDSS VDS VGS 0 50 Ω L VDD TEST CIRCUIT 2 SWITCHING TIME D.U.T. RL PG. RG VDD ID 90 % 90 % VGS VGS Wave Form 0 10 % VGS(on) 90 % IAS ID VDD ID ID Wave Form 0 10 % 10 % τ τ = 1 µs Duty Cycle ≤ 1 % td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA 50 Ω RL VDD PG. 2 Data Sheet G14321EJ1V0DS00 µPA1728 [MEMO] Data Sheet G14321EJ1V0DS00 3 µPA1728 • The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. • N o part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. • NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. • D escriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. • While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. • N EC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8