DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1758
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application.
FEATURES
• Dual MOS FET chips in small package • 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 mΩ (MAX.) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.0 A) • Low Ciss : Ciss = 1100 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8)
PACKAGE DRAWING (Unit : mm)
8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max.
+0.10 –0.05
6.0 ±0.3 4.4 0.8
0.15
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
1.8 Max.
1.44
0.05 Min.
0.5 ±0.2 0.10
1.27 0.40
0.78 Max. 0.12 M
µPA1758G
+0.10 –0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse)
Note1 Note2 Note2
EQUIVALENT CIRCUIT
30 ±12.0 ±6.0 ±24 1.7 2.0 150 –55 to + 150 V V A A W W °C °C
Gate Body Diode Drain
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature
Gate Protection Diode
Source
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Mounted on ceramic substrate of 2000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2
T he information in this document is subject to change without notice.
Document No. D12911EJ1V0DS00 (1st edition) Date Published October 1998 NS CP(K) Printed in Japan
©
1998
µPA1758
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) IF = 6.0 A, VGS = 0 ID = 6.0 A, VDD = 24 V, VGS = 4.0 V ID = 3.0 A, VGS(on) = 4.0 V, VDD = 15 V RG = 10 Ω TEST CONDITIONS VGS = 4.5 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 3.5 A VDS = 30 V, VGS = 0 VGS = ±12.0 V, VDS = 0 VDS = 10 V, VGS = 0, f = 1 MHz 1100 370 170 50 190 550 490 15.0 2.0 6.5 0.8 0.5 5.0 MIN. TYP. 20 25 0.8 13 10 ±10 MAX. 30 40 1.5 UNIT mΩ mΩ V S
µA µA
pF pF pF ns ns ns ns nC nC nC V
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL PG. RG RG = 10 Ω
GS Wave Form
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA PG.
90 % 90 % ID
VGS V 0 ID 10 % VGS (on)
90 %
RL VDD
VDD
50 Ω
VGS 0 t
t = 1µ s Duty Cycle ≤ 1 %
D Wave Form
I
0
10 % td (on) ton tr td (off) toff
10 % tf
2
µPA1758
TYPICAL CHARACTERISTICS (TA = 25 °C)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - ˚C/W
100
10
1
0.1
0.01 0.001
Mounted on ceramic Single Pulse substrate of 2000mm2 × 1.1mm Single Pulse , 1 unit
10 µ
100 µ
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
RDS(on) - Drain to Source On-state Resistance - mΩ
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed
|yfs| - Forward Transfer Admittance - S
100 TA=−50˚C TA=−25˚C TA=25˚C 10
VDS=10V Pulsed
50
ID=3 A
TA=75˚C TA=125˚C TA=150˚C 1
25
0.1
1
10
100
0
2
4
6
8
10
12
14
ID- Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 70 60 50 40 30 20 10 0 1 VGS=4.5V VGS=2.5V
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 − 50 0 50 100 150 VDS=10 V ID=1 mA
10 ID - Drain Current - A
100
Tch - Channel Temperature - ˚C
3
µPA1758
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
IF - Diode Forward Current - A
40
VGS=2.5V 100 VGS=2.5V 10
30
20
VGS=4.5V
1
VGS=0V
10 ID= 3.0 A − 50 0 50 100 150
0.1 0 0.5 1.0 1.5
0
Tch - Channel Temperature - ˚C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 f = 1 MHz
tf tr td(off) td(on)
Ciss 1000 Coss
100
100 Crss
10
10 0.1
1
10
100
1 0.1
VDS=15V VGS=4V RG =10Ω 1 10 100 ID - Drain Current - A
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000
trr - Reverse Recovery Diode - ns
VDS - Drain to Source Voltage - V
VGS = 4 V 30 VDD=24 V VDD=15 V VDD=6 V VGS 6
100
20
4
10
10
2
1 0.1
1
10
100
0
4
8
12
0 16
ID - Drain Current - A
QG - Gate Charge - nC
4
VGS - Gate to Source Voltage - V
di/dt =100A/µ s VGS = 0
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID=6.0 A 8
µPA1758
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
PT - Total Power Dissipation - W/package
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 2 unit 1 unit Mounted on ceramic substrate of 2000mm2×1.1mm
dT - Percentage of Rated Power - %
100 80 60 40 20
0
20
40
60
80
100 120 140 160
TA - Ambient Temperature - ˚C
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA 100
Mounted on ceramic substrate of 2 d ite ID(pulse) = 24 A 2000mm ×1.1mm, 1 unit im V) Pw )L 5 on = S( 4. 1 RD GS= m Pw s 10 (V ID(DC)=6 A = 10 Pw m s = Po 10 we 0 m rD s iss ipa 1 tio n Lim ite d
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 25
ID - Drain Current - A
ID - Drain Current - A
20 15 10 5
VGS=4.5 V
VGS=2.5 V
0.1 0.1
TA = 25 ˚C Single Pulse
1
10
100
0
0.2
0.4
0.6
0.8
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
ID - Drain Current - A
10 TA=150˚C TA=125˚C 1 TA=75˚C TA=25˚C TA=−25˚C TA=−50˚C 0.1
0
1
2
3
4
VGS - Gate to Source Voltage - V
5
µPA1758
[MEMO]
6
µPA1758
[MEMO]
7
µPA1758
[MEMO]
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