UPA1815

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate 1.2 MAX. 1.0±0.05 0.25 ° 3° +5° –3 FEATURES • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = –4.5 V, ID = –3.5 A) RDS(on)2 = 16 mΩ MAX. (VGS = –4.0 V, ID = –3.5 A) RDS(on)3 = 19 mΩ MAX. (VGS = –3.3 V, ID = –3.5 A) RDS(on)4 = 23 mΩ MAX. (VGS = –2.5 V, ID = –3.5 A) 1 4 0.1±0.05 0.5 0.6 +0.15 –0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE Power TSSOP8 0.65 0.27 +0.03 –0.08 0.8 MAX. 0.1 µPA1815GR-9JG 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage 5 Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT –20 ±12 ±7 ±26 2.0 150 –55 to +150 V V A A W °C °C Gate Protection Diode Source Gate Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Body Diode Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13805EJ2V0DS00 (2nd edition) Date Published August 1999 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1998, 1999 µ PA1815 5 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = –20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = –10 V, ID = –1 mA VDS = –10 V, ID = –3.5 A VGS = –4.5 V, ID = –3.5 A VGS = –4.0 V, ID = –3.5 A VGS = –3.3 V, ID = –3.5 A VGS = –2.5 V, ID = –3.5 A VDS = –10 V VGS = 0 V f = 1 MHz VDD = –10 V ID = –3.5 A VGS(on) = –4.0 V RG = 10 Ω VDD = –16 V ID = –7 A VGS = –4.0 V IF = 7 A, VGS = 0 V IF = 7 A, VGS = 0 V di/dt = 100 A/µs –0.5 9 –0.9 19 12 13 14 17 3000 790 410 45 200 140 160 25 5 8.5 0.78 60 45 15 16 19 23 MIN. TYP. MAX. –10 ±10 –1.5 UNIT µA µA V S mΩ mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL PG. RG RG = 10 Ω VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS IG = 2 mA VGS(on) 90 % VGS Wave Form RL VDD 0 10 % PG. 50 Ω VGS 0 τ τ = 1µ s Duty Cycle ≤ 1 % ID Wave Form 2 Data Sheet D13805EJ2V0DS00 µ PA1815 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 5 −100 FORWARD BIAS SAFE OPERATING AREA d ite V) Lim 4.5 = ID(pulse) dT - Derating Factor - % ID - Drain Current - A 80 −10 RD VGS (@ n) S(o PW 10 ms =1 ID(DC) ms 60 10 0m s −1 DC 40 20 TA = 25 ˚C Single Pulse Mounted on Ceramic 2 −0.01 Substrate of 50cm x 1.1mm −0.1 0 30 60 90 120 150 −0.1 −1 −10 −100 TA - Ambient Temperature - ˚C VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −30 TRANSFER CHARACTERISTICS −100 −10 VDS = −10 V ID - Drain Current - A ID - Drain Current - A −20 VGS = −4.5 V −4.0 V −3.3 V −2.5 V −1 −0.1 −0.01 −0.001 TA = 125˚C 75˚C 25˚C −25˚C −10 −0.0001 0 0.0 −0.2 −0.4 −0.6 −0.8 −0.00001 0 −0.5 −1.0 −1.5 −2.0 VDS - Drain to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate to Source Cut-off Voltage - V VGS - Gate to Sorce Voltage - V FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT 100 | yfs | - Forward Transfer Admittance - S −1.2 VDS = −10 V ID = −1 mA VDS = −10V TA = −25 ˚C 25 ˚C −1.0 −0.8 1 75 ˚C 125 ˚C −0.6 −0.4 −50 0 50 100 150 0.01 −0.01 −0.1 −1 ID - Drain Current - A −10 −100 Tch - Channel Temperature - ˚C Data Sheet D13805EJ2V0DS00 3 µ PA1815 RDS(on) - Drain to Source On-State Resistance - mΩ 30 RDS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = −2.5 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 25 VGS = −3.3 V 25 TA = 125˚C 75˚C 25˚C 20 TA = 125˚C 20 75˚C 15 25˚C 15 −25˚C −25˚C 10 −0.01 −0.1 −1 −10 −100 10 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 VGS = −4.0 V TA = 125˚C 75˚C 25˚C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 20 VGS = −4.5 V TA = 125˚C RDS(on) - Drain to Source On-State Resistance - mΩ 15 RDS(on) - Drain to Source On-State Resistance - mΩ 15 75˚C 25˚C −25˚C 10 10 −25˚C 5 −0.01 −0.1 −1 −10 −100 5 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A ID - Drain Current - A RDS (on) - Drain to Source On-state Resistance - mΩ 30 RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = −3.5 A VGS = −2.5 V −3.3 V −4.0 V −4.5 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 50 ID = −3.5 A 40 20 30 20 10 10 0 −50 Tch 0 50 100 - Channel Temperature -˚C 150 0 −2 −4 −6 −8 −10 −12 VGS - Gate to Source Voltage - V 4 Data Sheet D13805EJ2V0DS00 µ PA1815 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Swwitchig Time - ns Ciss, Coss, Crss - Capacitance - pF f = 1 MHz VGS = 0 V Ciss td(off) 100 td(on) tr tf 1000 Coss Crss 100 10 VDD = −10 V VGS(on) = −4.0 V RG = 10 Ω −1 ID - Drain Current - A −10 10 −1 −10 VDS - Drain to Source Voltage - V −100 1 −0.1 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 5 VGS - Gate to Source Voltage - V −10 −8 −6 −4 −2 DYNAMIC INPUT CHARACTERISTICS ID = −7 A IF - Source to Drain Current - A 10 1 VDD = −16 V −10 V 0.1 0.01 0.4 0.6 0.8 1.0 1.2 0 VF(S-D) - Source to Drain Voltage - V 0 5 10 15 20 25 30 Qg - Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W Mounted on ceramic substrate of 50 cm2 x 1.1 mm Single Pulse 100 62.5˚C/W 10 1 0.1 0.001 0.01 0.1 1 PW - Pulse Width - s 10 100 1000 Data Sheet D13805EJ2V0DS00 5 µ PA1815 [MEMO] 6 Data Sheet D13805EJ2V0DS00 µ PA1815 [MEMO] Data Sheet D13805EJ2V0DS00 7 µ PA1815 • The information in this document is subject to change without notice. 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