UPA1818GR-9JG

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1818 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING The µ PA1818 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on. DESCRIPTION PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 1.2 MAX. 1.0±0.05 0.25 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 15.2 mΩ MAX. (VGS = −4.5 V, ID = −5.0 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −5.0 A) RDS(on)3 = 25 mΩ MAX. (VGS = −2.5 V, ID = −5.0 A) • Built-in G-S protection diode against ESD ° 3° +5° –3 0.1±0.05 1 4 0.5 0.6 +0.15 –0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE Power TSSOP8 0.65 0.27 +0.03 –0.08 0.8 MAX. µPA1818GR-9JG 0.1 0.10 M ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg −20 V V A A W °C °C EQUIVALENT CIRCUIT Drain m 12 m 10 m 40 2.0 150 −55 to +150 Gate Gate Protection Diode Body Diode Total Power Dissipation Channel Temperature Storage Temperature Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G16254EJ1V0DS00 (1st edition) Date Published September 2002 NS CP(K) Printed in Japan © 2002 µ PA1818 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = −16 V VGS = −4.0 V ID = −10 A IF = 10 A, VGS = 0 V IF = 10 A, VGS = 0 V di/dt = 100 A / µ s TEST CONDITIONS VDS = −20 V, VGS = 0 V VGS = MIN. TYP. MAX. UNIT −1.0 µA µA V S m 12 V, VDS = 0 V −0.5 12 m 10 −1.1 24 12.1 12.7 18.8 2200 510 310 23 207 139 193 20 5.0 6.0 0.82 44 28 15.2 16 25 VDS = −10 V, ID = −1.0 mA VDS = −10 V, ID = −5.0 A VGS = −4.5 V, ID = −5.0 A VGS = −4.0 V, ID = −5.0 A VGS = −2.5 V, ID = −5.0 A VDS = −10 V VGS = 0 V f = 1.0 MHz VDD = −10 V, ID = −5.0 A VGS = −4.0 V RG = 10 Ω −1.5 mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC TEST CIRCUIT 1 SWITCHING TIME VGS(−) D.U.T. RL PG. RG VDD VDS TEST CIRCUIT 2 GATE CHARGE D.U.T. IG = −2 mA 50 Ω RL VDD VGS Wave Form 0 10 % VGS 90 % VDS(−) 90 % 90 % 10 % 10 % PG. VDS VGS (−) 0 τ τ = 1 µs Duty Cycle ≤ 1% Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G16254EJ1V0DS µ PA1818 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.5 dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 2 Mounted on ceramic 2 substrate of 5000 mm x 1.1 mm 80 1.5 60 1 40 20 0.5 Mounted on FR-4 board 2 of 2500 mm x 1.6 mm 0 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA -100 ID(pulse) ID(DC) -10 PW = 1 ms TA - Ambient Temperature - °C ID - Drain Current - A 10 ms -1 RDS(on) Limited (VGS = −4.5 V) DC 100 ms -0.1 Single pulse Mounted on ceramic 2 substrate of 5000 mm x 1.1 mm -0.01 -0.1 -1 -10 -100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W Single pulse Mounted on FR-4 board 2 of 2500 mm x 1.6 mm °C/W 125 100 10 Mounted on ceramic 2 substrate of 5000 mm x 1.1 mm 62.5°C/W 1 0.1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G16254EJ1V0DS 3 µ PA1818 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 40 Pulsed VGS = −4.5 V - 100 FORWARD TRANSFER CHARACTERISTICS VDS = −10 V Pulsed ID - Drain Current - A - 30 ID - Drain Current - A −4.0 V - 10 -1 T A = 125°C 75°C 25°C − 25°C −2.5 V - 20 - 0.1 - 0.01 - 10 - 0.001 0 0 - 0.2 - 0.4 - 0.6 - 0.8 - 0.0001 - 0.5 -1 - 1.5 -2 - 2.5 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE - 1.4 100 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VDS = −10 V Pulsed VGS(off) - Gate Cut-off Voltage - V VDS = −10 V ID = −1.0 mA - 1.2 10 TA = −25°C 25°C 75°C 125°C 1 -1 - 0.8 - 0.6 - 0.4 -50 0 50 100 150 0.1 - 0.01 - 0.1 -1 - 10 - 100 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 30 ID = −5.0 A Pulsed VGS = −2.5 V 20 30 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGE ID = −5.0 A Pulsed 20 10 −4.0 V −4.5 V 10 0 -50 0 0 -2 -4 -6 -8 -10 -12 0 50 100 150 Tch – Channel Temperrature - °C VGS - Gate to Source Voltage - V 4 Data Sheet G16254EJ1V0DS µ PA1818 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 30 VGS = −4.5 V Pulsed TA = 125°C 75°C 25°C -25°C 30 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = −4.0 V Pulsed TA = 125°C 75°C 25°C −25°C 20 20 10 10 0 - 0.01 - 0.1 -1 - 10 - 100 0 - 0.01 - 0.1 -1 - 10 - 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 30 VGS = −2.5 V Pulsed 10000 ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V f = 1.0 MHz 20 Ciss, C oss, Crss - Capacitance - pF C iss 1000 10 TA = 125°C 75°C 25°C −25°C C oss C rss 0 - 0.01 - 0.1 -1 - 10 - 100 100 - 0.1 -1 - 10 - 100 ID - Drain Current - A VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 10000 VDD = −10 V VGS = −4.0 V RG = 10 Ω SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VGS = 0 V Pulsed td(on), tr, td(off), tf - Switching Time - ns IF - Diode Forward Current - A 10 1000 tf 1 t d(off) 100 t d(on) tr 10 - 0.01 0.1 0.01 - 0.1 -1 - 10 0.4 0.6 0.8 1 1.2 ID - Drain Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet G16254EJ1V0DS 5 µ PA1818 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -5 ID = −10 A VGS - Gate to Source Voltage - V -4 VDD = −4.0 V −10 V −16 V -3 -2 -1 0 0 5 10 15 20 25 QG - Gate Charge - nC 6 Data Sheet G16254EJ1V0DS µ PA1818 [MEMO] Data Sheet G16254EJ1V0DS 7 µ PA1818 • The information in this document is current as of September, 2002. 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