UPA1901TE

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1901 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA1901 is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 6 5 4 1.5 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.0 V, ID = 3.5 A) RDS(on)3 = 54 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) 0 to 0.1 1 2 3 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source µ PA1901TE Marking : TQ EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30 ±12 ±6.5 ±26 0.2 2.0 150 –55 to +150 V V A A W W °C °C Gate Gate Protection Diode Body Diode Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark Note2 Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15804EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan © 2002 µ PA1901 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 24 V VGS = 4.0 V ID = 6.5 A IF = 6.5 A, VGS = 0 V TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 3.5 A VGS = 4.5 V, ID = 3.5 A VGS = 4.0 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 10 V, ID = 3.5 A VGS = 4.0 V RG = 10 Ω 0.5 3.0 1.0 7.9 31 32 40 470 100 60 35 110 170 130 5.4 1.1 2.4 0.9 39 40 54 MIN. TYP. MAX. 10 UNIT µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ±10 1.5 TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS 0 10% VGS 90% IG = 2 mA 50 Ω RL VDD VDD PG. 90% VDS 90% 10% 10% VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G15804EJ1V0DS µ PA1901 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.25 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 2 PT - Total Power Dissipation - W 1.75 1.5 1.25 1 0.75 0.5 0.25 0 80 60 40 20 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 R DS(on) L imited (V GS = 4 .5 V) TA - Ambient Temperature - °C ID(pulse) PW = 100 µ s 10 ID - Drain Current - A ID(DC) 1 1 ms 10 ms 100 ms 0.1 Single Pulse Mounted on FR-4 board of 50 m m × 50 m m × 1.6 m m 0.1 1 10 5s 0.01 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W Single Pulse W ithout board 100 Mounted on FR-4 board of 50 mm × 50 mm × 1.6 mm 10 1 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15804EJ1V0DS 3 µ PA1901 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 Pulsed 25 4.0 V V GS = 4 .5 V FORWARD TRANSFER CHARACTERISTICS 100 P ulsed V DS = 1 0 V 10 ID - Drain Current - A 20 ID - Drain Current - A 1 T A = 1 25°C 75°C 25°C − 25°C 15 0.1 10 2.5 V 5 0.01 0.001 0 0 0.2 0.4 0.6 0.8 1 0.0001 0 0.5 1 1.5 2 2.5 3 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.4 100 VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S P ulsed V DS = 1 0 V VGS(off) - Gate Cut-off Voltage - V V DS = 1 0 V I D = 1 .0 mA 10 0.9 1 T A = 1 25°C 75°C 25°C − 25°C 0.1 0.4 -50 0 50 100 150 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - °C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 100 VGS = 4.5 V Pulsed 80 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 100 V GS = 4 .0 V Pulsed 80 T A = 1 25 °C 60 75 °C 40 25 °C − 25 °C 60 TA = 125°C 75°C 40 25°C −25°C 20 20 0 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 ID - Drain Current - A ID - Drain Current - A 4 Data Sheet G15804EJ1V0DS µ PA1901 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 100 V GS = 2 .5 V Pulsed 80 25 °C 60 − 25 ° C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 100 Pulsed T A = 1 25 ° C 75 °C 80 60 40 40 ID = 3 .5 A 20 0 0.01 20 0 5 10 15 0.1 1 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 1000 Pulsed ID = 3.5 A 60 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ C iss 4.0 V 40 4.5 V Ciss, Coss, Crss - Capacitance - pF VGS = 2.5 V 100 C oss C rss 20 V GS = 0 V f = 1.0 MHz 10 0.1 1 10 100 0 -50 0 50 100 150 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 7 td(on), tr, td(off), tf - Switching Time - ns V DD = 1 0 V V GS = 4 .0 V R G = 10 Ω t d(off) tf 100 tr t d(on) VGS - Gate to Source Voltage - V ID = 6.5 A 6 5 4 3 2 1 VDD = 24 V 15 V 6V 10 0.1 1 10 0 0 1 2 3 4 5 6 7 ID - Drain Current - A QG - Gate Charge - nC Data Sheet G15804EJ1V0DS 5 µ PA1901 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 Pulsed IF - Diode Forward Current - A 10 V GS = 0 V 1 0.1 0.01 0.4 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V 6 Data Sheet G15804EJ1V0DS µ PA1901 [MEMO] Data Sheet G15804EJ1V0DS 7 µ PA1901 • The information in this document is current as of June, 2002. 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