UPA1902TE

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1902 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA1902 is a switching device, which can be driven directly by a 4.5 V power source. This µ PA1902 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management switch of portable machine and so on. 2.8 ±0.2 PACKAGE DRAWING (Unit: mm) 0.32 +0.1 –0.05 0.65 –0.15 +0.1 0.16 +0.1 –0.06 6 1 5 2 4 0 to 0.1 FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 17 mΩ TYP. (VGS = 10 V, ID = 3.5 A) RDS(on)2 = 22 mΩ TYP. (VGS = 4.5 V, ID = 3.5 A) 1.5 3 0.65 0.9 to 1.1 0.4 0.95 0.95 1.9 2.9 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type) µ PA1902TE Marking: TY 1, 2, 5, 6: Drain 3 : Gate 4 : Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Drain Current (pulse) Total Power Dissipation Note2 Total Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30 ±20 ±7.0 ±28 0.2 2.0 150 −55 to +150 V V A A W W °C °C EQUIVALENT CIRCUIT Drain Gate Body Diode Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec. Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. (It does not have built-in G-S protection diode.) When this product actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16634EJ1V0DS00 (1st edition) Date Published October 2003 NS CP(K) Printed in Japan 2003 µ PA1902 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 15 V VGS = 5.0 V ID = 7.0 A IF = 7.0 A, VGS = 0 V TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 3.5 A VGS = 10 V, ID = 3.5 A VGS = 4.5 V, ID = 3.5 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 1.0 A VGS = 10 V RG = 6.0 Ω 1.5 3.0 17 22 780 180 120 16 10 108 56 8.0 2.7 3.4 0.84 22 30 2.0 MIN. TYP. MAX. 1.0 ±100 2.5 UNIT µA nA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS 0 10% IG = 2 mA VGS 90% RL VDD VDD PG. 90% 90% 10% 10% 50 Ω VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G16634EJ1V0DS µ PA1902 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 120 PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) ID - Drain Current - A 10 ID(DC) PW = 1 ms 1 RDS(on) Limited (at VGS = 10 V) Single pulse Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 10 ms 100 ms 5s 0.1 0.01 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 1000 Without board 100 Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm 10 Single pulse 1 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet G16634EJ1V0DS 3 µ PA1902 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 30 Pulsed 100 10 ID - Drain Current - A VGS = 10 V 25 ID - Drain Current - A VDS = 10 V Pulsed 20 15 10 5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 VDS - Drain to Source Voltage - V 4.5 V 1 0.1 0.01 0.001 0.0001 0 TA = 125°C 75°C 25°C −25°C 1 2 3 4 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 2.4 VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1.0 mA 100 VDS = 10 V Pulsed 10 1.9 1 TA = −25°C 25°C 75°C 125°C 1.4 -50 0 50 100 150 Tch - Channel Temperature - °C 0.1 0.01 0.1 1 10 100 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = 4.5 V Pulsed TA = 125°C 75°C 25°C −25°C 40 TA = 125°C 75°C 25°C −25°C 40 20 20 0 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 ID - Drain Current - A ID - Drain Current - A 4 Data Sheet G16634EJ1V0DS µ PA1902 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 Pulsed 50 ID = 3.5 A Pulsed 60 40 30 20 10 0 -50 0 50 100 150 Tch - Channel Temperature - °C VGS = 4.5 V 40 10 V 20 ID = 3.5 A 0 0 5 10 15 20 25 VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 10000 Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns VGS = 0 V f = 1M H z 1000 VDD = 15 V VGS = 10 V RG = 6.0 Ω td(off) 1000 C i ss 100 tf td(on) 100 C oss C r ss 10 tr 10 0.1 1 10 100 VDS - Drain to Source Voltage - V 1 0.1 1 ID - Drain Current - A 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 VGS - Gate to Source Voltage - V 100 IF - Diode Forward Current - A VGS = 5.0 V ID = 7.0 A VDD = 24 V 15 V 6V Pulsed 9 8 7 6 5 4 3 2 1 0 0 10 1 0.1 0.01 1 2 3 4 5 6 7 8 9 10 0.4 0.6 0.8 1 1.2 1.4 QG - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V Data Sheet G16634EJ1V0DS 5 µ PA1902 • T he information in this document is current as of October, 2003. 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