UPA1912

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1912 is a switching device which can be driven directly by a 2.5-V power source. The µPA1912 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 2.8 ±0.2 PACKAGE DRAWING (Unit : mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 6 5 4 1.5 0 to 0.1 1 2 3 FEATURES • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 52 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A) RDS(on)3 = 70 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 ORDERING INFORMATION PART NUMBER PACKAGE 6-pin Mini Mold (Thin Type) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source µPA1912TE EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 –12 ±10 ±4.5 ±18 0.2 2 150 –55 to +150 V V A A W W °C °C Gate Gate Protection Diode Marking: TD Body Diode Source Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR-4 board, t ≤ 5 sec. Remark PT2 Tch Tstg The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13806EJ2V0DS00 (2nd edition) Date Published July 1999 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 1998, 1999 µ PA1912 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = –12 V, VGS = 0 V VGS = ±10 V, VDS = 0 V VDS = –10 V, ID = –1 mA VDS = –10 V, ID = –2.5 A VGS = –4.5 V, ID = –2.5 A VGS = –4.0 V, ID = –2.5 A VGS = –2.5 V, ID = –2.5 A VDS = –10 V VGS = 0 V f = 1 MHz VDD = –6 V ID = –2.5 A VGS(on) = –4.0 V RG = 10 Ω VDD = –10 V ID = –4.5 A VGS = –4.0 V IF = 4.5 A, VGS = 0 V IF = 4.5 A, VGS = 0 V di/dt = 10 A / µs –0.5 3 –0.90 9.3 39 40 53 810 241 122 304 532 406 796 5.6 2.2 2.6 0.86 1.1 4.3 50 52 70 MIN. TYP. MAX. –10 ±10 –1.5 UNIT µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V µs µC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL PG. RG RG = 10 Ω VDD ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS D.U.T. IG = 2 mA VGS(on) 90 % VGS Wave Form RL VDD 0 10 % PG. 50 Ω VGS 0 τ τ = 1µ s Duty Cycle ≤ 1 % ID Wave Form 2 Data Sheet D13806EJ2V0DS00 µ PA1912 TYPICAL CHARCTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 −100 d ite im V) ID(DC) FORWARD BIAS SAFE OPERATING AREA Single Pulse Mounted on 250mm2 x 35µm copper pad connected to drain electrode in 50mm x 50mm x 1.6mm FR-4 board. ID(pulse) PW =1 m s PW =1 0m PW s =1 00 PW m =5 s s dT - Derating Factor - % ID - Drain Current - A 80 −10 60 ) L .5 4 on S( = − RD GS (V 40 −1 20 0 30 60 90 120 150 −0.1 −1 −10 −100 TA - Ambient Temperature - ˚C VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −20 −16 −12 VGS = −2.5 V −8 −4 VGS = −4.5 V −100 −10 FORWARD TRANSFER CHARACTERISTICS VDS = −10 V ID - Drain Current - A ID - Drain Current - A VGS = −4.0 V −1 −0.1 −0.01 −0.001 −0.0001 TA = 125˚C 75˚C TA = 25˚C −25˚C 0 −0.2 −0.4 −0.6 −0.8 −1.0 −0.00001 0 −1.0 −2.0 −3.0 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S −1.5 VDS = −10 V ID = −1 mA 100 VDS = −10 V TA = −25˚C 25˚C 75˚C 125˚C 10 −1.0 1 0.1 −0.5 −50 0 50 100 150 0.01 −0.01 −0.1 −1 −10 −100 Tch - Channel Temperature - ˚C ID - Drain Current - A Data Sheet D13806EJ2V0DS00 3 µ PA1912 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 VGS = −2.5 V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 60 VGS = −4.0 V 100 TA =125 °C 50 TA = 75 °C TA = 25 °C 80 TA =125 °C 40 60 TA = 75 °C TA = 25 °C TA =−25°C TA =−25°C 40 −0.01 −0.1 −1 −10 −100 30 −0.01 −0.1 −1 −10 100 ID - Drain Current - A ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 60 VGS = −4.5 V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 70 ID = −2.5 A 60 VGS =−2.5 V 50 TA =125 °C TA = 75 °C VGS =−4.0 V 50 VGS =−4.5 V 40 TA = 25 °C 40 TA =−25°C 30 −0.01 −0.1 −1 −10 −100 30 −50 0 50 100 150 ID - Drain Current - A Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 ID = −2.5 A 80 Ciss, Coss, Crss - Capacitance - pF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 f = 1 MHz VGS = 0 V 1000 60 Ciss Coss 40 100 Crss 20 0 −2 −4 −6 −8 −10 10 −0.1 −1.0 −10 −100 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 4 Data Sheet D13806EJ2V0DS00 µ PA1912 5 10000 SWITCHING CHARACTERISTICS 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(on), tr, td(off), tf - Switching Time - ns IF(S-D) - Diode Forward Current - A 10 1000 td(off) td(on) 100 tf tr 1 0.1 10 −0.1 −1 VDD = −6 V VGS(on) = −4.0 V RG = 10 Ω −10 0.01 0.4 0.6 0.8 1.0 1.2 ID - Drain Current - A VF(S-D) - Source to Drain Voltage - V DYNAMIC INPUT CHARACTERISTICS −8 VDS - Drain to Source Voltage - V ID = −4.5 A −6 VDD = −10 V −6 V −4 −2 0 2 4 6 8 10 QG - Total Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Single Pulse rth(t) - Transient Thermal Resistance - °C/W Without Board 100 Mounted on 250mm2×35µm copper pad connected to drain electrode in 50mm×50mm×1.6mm FR-4 board 10 1 0.001 0.01 0.1 1 PW - Pulse Width - s 10 100 1000 Data Sheet D13806EJ2V0DS00 5 µ PA1912 [MEMO] 6 Data Sheet D13806EJ2V0DS00 µ PA1912 [MEMO] Data Sheet D13806EJ2V0DS00 7 µ PA1912 • The information in this document is subject to change without notice. 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