UPA1915

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1915 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1915 is a switching device which can be driven directly by a 2.5-V power source. The µPA1915 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 6 5 4 1.5 0 to 0.1 1 2 3 FEATURES • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 55 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 58 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A) RDS(on)3 = 82 mΩ MAX. (VGS = –2.7 V, ID = –2.5 A) RDS(on)4 = 90 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 5 ORDERING INFORMATION PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type) 1, 2, 5, 6 : Drain 3 : Gate 4 : Source µPA1915TE EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 Note2 –20 ±12 ±4.5 ±18 0.2 2 150 –55 to +150 V V A A W W °C °C Gate Gate Protection Diode Marking: TH Body Diode Source Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR-4 Board, t ≤ 5 sec. Remark PT2 Tch Tstg The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G14761EJ1V0DS00 (1st edition) Date Published May 2000 NS CP(K) Printed in Japan The mark 5 shows major revised points. © 2000 µ PA1915 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 TEST CONDITIONS VDS = –20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = –10 V, ID = –1 mA VDS = –10 V, ID = –2.5 A VGS = –4.5 V, ID = –2.5 A VGS = –4.0 V, ID = –2.5 A VGS = –2.7 V, ID = –2.5 A VGS = –2.5 V, ID = –2.5 A VDS = –10 V VGS = 0 V f = 1 MHz VDD = –10 V ID = –2.5 A VGS(on) = –4.0 V RG = 10 Ω VDD = –16 V ID = –4.5 A VGS = –4.0 V IF = 4.5 A, VGS = 0 V –0.5 3 –1.1 8.8 45 47 61 67 820 210 100 16 14 58 46 5.0 2.0 2.5 0.86 55 58 82 90 MIN. TYP. MAX. –10 ±10 –1.5 UNIT µA µA V S mΩ mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V 5 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) TEST CIRCUIT 1 SWITCHING TIME VGS(−) D.U.T. RL PG. RG VDD VDS VGS (−) 0 τ τ = 1 µs Duty Cycle ≤ 1 % Wave Form TEST CIRCUIT 2 GATE CHARGE D.U.T. IG = −2 mA 50 Ω RL VDD VGS Wave Form 0 10 % VGS(on) 90 % VDS(−) 90 % 90 % 10 % 10 % PG. VDS 0 td(on) ton tr td(off) toff tf 2 Data Sheet G14761EJ1V0DS00 µ PA1915 5 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 FORWARD BIAS SAFE OPERATING AREA −100 d ite V) im 4.5 ID (pulse) PW PW ID - Drain Current - A dT - Derating Factor - % −10 V (@ )L on = S( RD GS − PW =1 0 =1 ms ID (DC) PW ms 60 −1 =1 00 ms =5 s 40 20 −0.1 0 0 30 60 90 120 TA - Ambient Temperature - ˚C 150 −0.01 −0.1 Single Pulse Mounted on 250 mm2x 35 µm Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board −1 −10 −100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE −18 TRANSFER CHARACTERISTICS −100 −10 VDS = −10 V VGS = −4.5 V ID - Drain Current - A −4.0 V −12 ID - Drain Current - A −1 −0.1 −0.01 −0.001 TA = 125˚C 75˚C 25˚C −25˚C −2.7 V −2.5 V −6 −0.0001 0 0.0 −0.00001 0 −0.5 −1.0 −1.5 −2.0 −2.5 −3.0 −0.2 −0.4 −0.6 −0.8 −1.0 VDS - Drain to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 100 | yfs | - Forward Transfer Admittance - S VGS - Gate to Sorce Voltage - V FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT VDS = −10V VGS(off) - Gate to Source Cut-off Voltage - V −1.5 VDS = −10 V ID = −1 mA 10 TA = 125˚C 75˚C 25˚C −25˚C −1.0 1 0.1 −0.5 −50 0 50 100 150 0.01 −0.01 −0.1 −1 ID - Drain Current - A −10 −100 Tch - Channel Temperature - ˚C Data Sheet G14761EJ1V0DS00 3 µ PA1915 RDS(on) - Drain to Source On-state Resistance - mΩ 100 VGS = −4.5 V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = −4.0 V 100 80 80 TA = 125˚C 75˚C 25˚C 60 TA = 125˚C 75˚C 25˚C 60 40 −25˚C 40 −25˚C 20 20 0 −0.01 −0.1 −1 −10 −100 0 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = −2.7 V ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = −2.5 V RDS(on) - Drain to Source On-state Resistance - mΩ 150 100 TA = 125˚C 75˚C 25˚C −25˚C RDS(on) - Drain to Source On-state Resistance - mΩ 150 100 TA = 125˚C 75˚C 25˚C −25˚C 50 50 0 −0.01 −0.1 −1 −10 −100 0 −0.01 −0.1 −1 −10 −100 ID - Drain Current - A ID - Drain Current - A RDS (on) - Drain to Source On-state Resistance - mΩ 100 RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = −2.5 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 VGS = −2.5 V −2.7 V −4.0 V ID = −2.5 A 80 80 60 60 −4.5 V 40 40 20 20 −50 Tch 0 50 100 - Channel Temperature -˚C 150 0 0 −2 −4 −6 −8 −10 −12 VGS - Gate to Source Voltage - V 4 Data Sheet G14761EJ1V0DS00 µ PA1915 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switchig Time - ns Ciss, Coss, Crss - Capacitance - pF f = 1 MHz VGS = 0V 1000 100 tf Ciss td(off) Coss 100 Crss td(on) 10 tr VDD = −10 V VGS(on) = −4.0 V RG = 10 Ω −1.0 ID - Drain Current - A −10 10 −0.1 −1 −10 −100 1 −0.1 VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT CHARACTERISTICS −5 IF - Source to Drain Current - A VGS - Gate to Source Voltage - V 100 VGS = 0V ID = −4.5 A −4 −3 −2 −1 10 VDD = −16 V −10 V 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 0 0 1 2 3 4 5 6 7 VF(S-D) - Diode Forward Voltage - V QG - Gate Charge - nC TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - ˚C/W Without Board 100 Mounted on 250 mm2 x 35 µm Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board Single Pulse 10 1 0.1 0.001 0.01 0.1 1 PW - Pulse Width - s 10 100 1000 Data Sheet G14761EJ1V0DS00 5 µ PA1915 [MEMO] 6 Data Sheet G14761EJ1V0DS00 µ PA1915 [MEMO] Data Sheet G14761EJ1V0DS00 7 µ PA1915 • The information in this document is current as of May, 2000. 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