UPA1951TE

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1951 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA1951 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 1.5 FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 88 mΩ MAX. (VGS = −4.5V, ID = −1.5 A) RDS(on)2 = 114 mΩ MAX. (VGS = −3.0 V, ID = −1.5 A) RDS(on)3 = 133 mΩ MAX. (VGS = −2.5 V, ID = −1.5 A) RDS(on)4 = 234 mΩ MAX. (VGS = −1.8 V, ID = −1.0 A) 2.8 ±0.2 6 5 4 0 to 0.1 1 2 3 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 6: Drain 1 1: Gate 1 5: Source 1 4: Drain 2 3: Gate 2 2: Source 2 ORDERING INFORMATION PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type) µ PA1951TE Marking: TN ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUITS −12 m8.0 m2.5 m10 1.15 0.57 150 −55 to +150 V V A A W W °C °C Gate 1 Gate Protection Diode Drain 1 Drain 2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Body Diode Gate 2 Gate Protection Diode Body Diode Total Power Dissipation (2 units) Total Power Dissipation (1 unit) Channel Temperature Storage Temperature Note2 Source 1 Source 2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15613EJ1V0DS00 (1st edition) Date Published August 2002 NS CP(K) Printed in Japan © 2001 µ PA1951 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = −10 V VGS = −4.0 V ID = −2.5 A IF = 2.5 A, VGS = 0 V TEST CONDITIONS VDS = −12 V, VGS = 0 V VGS = m8.0 V, VDS = 0 V VDS = −10 V, ID = −1.0 mA VDS = −10 V, ID = −1.5 A VGS = −4.5 V, ID = −1.5 A VGS = −3.0 V, ID = −1.5 A VGS = −2.5 V, ID = −1.5 A VGS = −1.8 V, ID = −1.0 A VDS = −10 V VGS = 0 V f = 1.0 MHz VDD = −6.0 V, ID = −1.5 A VGS = −4.0 V RG = 10 Ω −0.45 1.0 −0.75 4.7 70 85 100 140 270 90 45 14 90 150 130 2.4 0.6 0.8 0.87 88 114 133 234 MIN. TYP. MAX. −10 UNIT µA µA V S mΩ mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V m10 −1.5 TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS(−) 0 10% VGS 90% IG = −2 mA 50 Ω RL VDD VDD PG. 90% VDS(−) 90% 10% 10% VGS(−) 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G15613EJ1V0DS µ PA1951 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.2 PT - Total Power Dissipation - W 1 0.8 0.6 0.4 0.2 0 0 25 Mounted on FR-4 board of 5000 mm 2 x 1.1 mm, t ≤ 5 sec. 2 units 1 unit 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA - 100 R DS(on) L im ited (V GS = − 4.5 V) ID(pulse) - 10 ID(DC) PW = 1 m s -1 5 s (2 units) - 0.1 5 s ( 1 unit) Single pulse M ounted on FR-4 board of 5000 m m 2 x 1 .1 m m -1 - 10 - 100 10 m s 100 m s ID - Drain Current - A - 0.01 - 0.1 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 1000 PD (FET1) : PD (FET2) = 1: 0 100 PD (FET1) : PD (FET2) = 1: 1 10 Single pulse Mounted on FR-4 board of 5000 mm 2 x 1.1 mm 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s 1 Data Sheet G15613EJ1V0DS 3 µ PA1951 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 10 Pulsed V GS = − 4.5 V FORWARD TRANSFER CHARACTERISTICS - 10 -1 VDS = −10 V P u ls e d ID - Drain Current - A − 3.0 V -6 − 2.5 V -4 ID - Drain Current - A -8 - 0 .1 - 0 .0 1 - 0 .0 0 1 - 0 .0 0 0 1 - 0 .0 0 0 01 T A = 1 2 5 °C 7 5 °C 2 5 °C − 2 5 °C -2 − 1.8 V 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1 0 - 0 .5 -1 - 1 .5 -2 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -1 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 10 V DS = − 10 V Pulsed VGS(off) - Gate Cut-off Voltage - V - 0.9 - 0.8 - 0.7 - 0.6 - 0.5 - 0.4 -50 0 50 V DS = − 10 V ID = − 1.0 mA 1 T A = − 25°C 25°C 75°C 125°C 0.1 100 150 0.01 - 0.01 - 0.1 -1 - 10 Tch - Channel Temperature - °C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 Pulsed V GS = − 1.8 V, ID = − 1.0 A 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed 150 100 VGS = − 2.5 V, ID = − 1.5 A V GS = − 3.0 V, ID = − 1.5 A V GS = − 4.5 V, ID = − 1.5 A 0 -50 0 50 100 150 100 ID = − 1.5 A 50 50 0 0 -2 -4 -6 -8 Tch - Channel Temperature - °C VGS - Gate to Source Voltage - V 4 Data Sheet G15613EJ1V0DS µ PA1951 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 V GS = − 4.5 V Pulsed 150 T A = 1 25°C 75°C 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 V GS = − 4.0 V Pulsed 150 T A = 1 25°C 75°C 100 50 25°C − 25°C 50 25°C − 25°C 0 - 0.01 - 0.1 -1 - 10 0 - 0.01 - 0.1 -1 - 10 ID - Drain Current - A ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 200 V GS = − 2.5 V Pulsed T A = 1 25°C 75°C RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 250 V GS = − 1.8 V Pulsed T A = 1 25°C 75°C 150 200 100 150 50 25°C − 25°C 100 25°C − 25°C 50 - 0.01 0 - 0.01 - 0.1 -1 - 10 - 0.1 -1 - 10 ID - Drain Current - A ID - Drain Current - A SWITCHING CHARACTERISTICS 1000 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 V GS = 0 V f = 1.0 MHz C iss td(on), tr, td(off), tf - Switching Time - ns td(off) 100 tf tr td(on) 10 V DD = − 6.0 V V GS = − 4.0 V R G = 10 Ω -1 - 10 Ciss, Coss, Crss - Capacitance - pF 100 C oss C rss 1 - 0.1 10 - 0.1 -1 - 10 - 100 ID - Drain Current - A VDS - Drain to Source Voltage - V Data Sheet G15613EJ1V0DS 5 µ PA1951 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -5 VGS - Gate to Source Voltage - V Pulsed ID = − 2.5 A -4 VDD = −6.0 V −10 V IF - Diode Forward Current - A 1 V GS = 0 V -3 -2 0.1 -1 0.01 0.4 0.6 0.8 1 1.2 0 0 0.5 1 1.5 2 2.5 3 VF(S-D) - Source to Drain Voltage - V QG - Gate Change - nC 6 Data Sheet G15613EJ1V0DS µ PA1951 [MEMO] Data Sheet G15613EJ1V0DS 7 µ PA1951 • The information in this document is current as of August, 2002. 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