UPA1952

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1952 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µ PA1952 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.32 +0.1 –0.05 0.65–0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 6 5 4 1.5 FEATURES • 1.8 V drive available • Low on-state resistance RDS(on)1 = 135 mΩ MAX. (VGS = −4.5V, ID = −1.0 A) RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A) RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A) 0 to 0.1 1 2 3 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 ±0.2 6: Drain 1 1: Gate 1 5: Source 1 4: Drain 2 3: Gate 2 2: Source 2 ORDERING INFORMATION PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type) µ PA1952TE Marking: TP ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUITS VDSS VGSS ID(DC) −20 m8.0 m2.0 m8.0 1.15 0.57 150 −55 to +150 V V A A W W °C °C Gate 1 Gate Protection Diode Drain 1 Drain 2 ID(pulse) PT1 PT2 Tch Tstg Note2 Body Diode Gate 2 Gate Protection Diode Body Diode Total Power Dissipation (2 units) Total Power Dissipation (1 unit) Channel Temperature Storage Temperature Source 1 Source 2 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. G15933EJ1V0DS00 (1st edition) Date Published August 2002 NS CP(K) Printed in Japan © 2001 µ PA1952 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = −16 V VGS = −4.0 V ID = −2.0 A IF = 2.0 A, VGS = 0 V TEST CONDITIONS VDS = −20 V, VGS = 0 V VGS = m8.0 V, VDS = 0 V VDS = −10 V, ID = −1.0 mA VDS = −10 V, ID = −1.0 A VGS = −4.5 V, ID = −1.0 A VGS = −2.5 V, ID = −1.0 A VGS = −1.8 V, ID = −0.5 A VDS = −10 V VGS = 0 V f = 1.0 MHz VDD = −10 V, ID = −1.0 A VGS = −4.0 V RG = 10 Ω −0.45 1.0 −0.75 4.1 108 137 170 272 60 30 29 120 145 148 2.3 0.6 0.6 0.9 135 183 284 MIN. TYP. MAX. −10 UNIT µA µA V S mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V m10 −1.5 TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS(−) 0 10% VGS 90% IG = −2 mA 50 Ω RL VDD VDD PG. 90% VDS(−) 90% 10% 10% VGS(−) 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G15933EJ1V0DS µ PA1952 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.2 PT - Total Power Dissipation - W 1 0.8 0.6 0.4 0.2 0 0 25 Mounted on FR-4 board of 2 5000 mm x 1.1 mm, t ≤ 5 sec. 2 units 1 unit 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA - 100 R DS(on) L im ited (V GS = − 4.5 V) I D(pulse) ID(DC) PW = 1 m s -1 5 s (1 unit) 5 s ( 2 units) - 0.1 Sin g le pulse M ounted on FR -4 board of 5000 m m 2 x 1 .1 m m -1 - 10 10 m s 100 m s ID - Drain Current - A - 10 - 0.01 - 0.1 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 1000 PD (FET1) : PD (FET2) = 1: 0 100 PD (FET1) : PD (FET2) = 1: 1 10 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 10 m 100 m 1 10 100 1000 1 1m PW - Pulse Width - s Data Sheet G15933EJ1V0DS 3 µ PA1952 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -8 Pulsed VGS = − 4.5 V FORWARD TRANSFER CHARACTERISTICS - 10 -1 V DS = −10 V P u ls e d ID - Drain Current - A -6 ID - Drain Current - A - 0 .1 - 0 .0 1 - 0 .0 0 1 - 0 .0 0 0 1 - 0 .0 0 0 0 1 T A = 1 2 5 °C 7 5 °C 2 5 °C − 2 5 °C -4 − 2.5 V -2 − 1.8 V 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1 - 1.2 0 - 0 .5 -1 - 1 .5 -2 - 2 .5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -1 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 10 V DS = − 10 V Pulsed T A = − 25°C 25°C 75°C 125°C VGS(off) - Gate Cut-off Voltage - V - 0.9 - 0.8 - 0.7 - 0.6 - 0.5 - 0.4 -50 0 50 V DS = − 10 V ID = − 1.0 mA 1 0.1 100 150 0.01 - 0.01 - 0.1 -1 - 10 Tch - Channel Temperature - °C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 300 Pulsed 250 VGS = − 1.8 V, ID = − 0.5 A VGS = − 2.5 V, ID = − 1.0 A 200 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 300 Pulsed 250 200 ID = − 1.0 A 150 150 100 V GS = − 4.5 V, ID = − 1.0 A 50 -50 0 50 100 150 100 50 0 -2 -4 -6 -8 Tch - Channel Temperature - °C VGS - Gate to Source Voltage - V 4 Data Sheet G15933EJ1V0DS µ PA1952 RDS(on) - Drain to Source On-state Resistance - mΩ 300 V GS = − 4.5 V Pulsed 250 T A = 1 25°C 75°C 25°C − 25°C RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 V GS = − 2.5 V Pulsed 250 T A = 1 25°C 75°C 25°C − 25°C 200 200 150 150 100 100 50 - 0.01 - 0.1 -1 - 10 50 - 0.01 - 0.1 -1 - 10 ID - Drain Current - A ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 T A = 1 25°C 75°C 200 25°C SWITCHING CHARACTERISTICS 1000 250 td(on), tr, td(off), tf - Switching Time - ns V GS = − 1.8 V Pulsed V DD = − 10 V V GS = − 4.0 V RG = 10 Ω td(off) 100 tf tr 150 − 25°C 100 td(on) 10 - 0.1 50 - 0.01 - 0.1 -1 - 10 -1 - 10 ID - Drain Current - A ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 V GS = 0 V f = 1.0 MHz C iss SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 Pulsed Ciss, Coss, Crss - Capacitance - pF IF - Diode Forward Current - A 1 V GS = 0 V 100 C oss C rss 10 - 0.1 0.1 0.01 -1 - 10 - 100 0.6 0.8 1 1.2 1.4 VDS - Drain to Source Voltage - V VF(S-D) - Source to Drain Voltage - V Data Sheet G15933EJ1V0DS 5 µ PA1952 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -5 VGS - Gate to Source Voltage - V ID = −2.0 A -4 VDD = − 4.0 V −10 V −16 V -3 -2 -1 0 0 0.5 1 1.5 2 2.5 3 QG - Gate Change - nC 6 Data Sheet G15933EJ1V0DS µ PA1952 [MEMO] Data Sheet G15933EJ1V0DS 7 µ PA1952 • The information in this document is current as of August, 2002. 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