UPA2708GR-E2

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2708GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µ PA2708GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 Power SOP8 Power SOP8 Power SOP8 µ PA2708GR-E1 µ PA2708GR-E2 Note Note FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low Ciss: Ciss = 4700 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power SOP8) µ PA2708GR-E1-A µ PA2708GR-E2-A Note Pb-free (This product does not contain Pb in external electrode and other parts.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30 ±20 ±17 ±68 1.1 2.5 150 −55 to +150 17 28.9 V V A A W W °C °C A mJ Total Power Dissipation Channel Temperature Storage Temperature Total Power Dissipation (PW =10 sec) Single Avalanche Current Single Avalanche Energy Note3 Note3 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Ambient Note Note Rth(ch-A) Rth(ch-L) 114 30 °C/W °C/W Channel to Drain Lead Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G17033EJ1V0DS00 (1st edition) Date Published May 2005 CP(K) Printed in Japan 2004 µ PA2708GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 9.0 A VGS = 10 V, ID = 9.0 A VGS = 4.5 V, ID = 9.0 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 9.0 A VGS = 10 V RG = 10 Ω MIN. TYP. MAX. 10 ±100 UNIT µA nA V S 1.0 10 4.5 5.6 4700 670 340 19 26 100 27 2.5 Drain to Source On-state Resistance 5.5 7.5 mΩ mΩ pF pF pF ns ns ns ns nC nC nC V ns nC Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Gate Resistance Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr RG VDD = 15 V VGS = 5 V ID = 1 7 A IF = 17 A, VGS = 0 V IF = 17 A, VGS = 0 V di/dt = 100 A/µs f = 1 MHz 38 13 12 0.8 33 27 1.2 Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω TEST CIRCUIT 2 SWITCHING TIME D.U.T. L VDD PG. RG RL VDD VGS VGS Wave Form 0 10% VGS 90% VDS 90% 90% 10% 10% BVDSS IAS ID VDD VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet G17033EJ1V0DS µ PA2708GR TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 dT - Percentage of Rated Power - % FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse) ID(DC) 100 80 60 40 20 0 10 ID - Drain Current - A RDS(on) Limited (at VGS = 10 V) Power Dissipation Limited PW = 100 µs 10 ms 1 ms 1 0.1 TA = 25°C 100 ms Single pulse Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm 10 s 0 20 40 60 80 100 120 140 160 0.01 0.01 0.1 1 10 100 TA - Ambient Temperature - ˚C VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W Rth(ch-A) = 114°C/W 100 10 1 0.1 Single pulse Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 0.01 100 µ DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 70 60 ID - Drain Current - A 100 VGS = 10 V ID - Drain Current - A 50 40 30 20 10 0 0 0.1 0.2 0.3 4.5 V 10 Tch = −55°C 25°C 75°C 150°C 1 0.1 VDS = 10 V Pulsed 0.01 1 2 3 4 5 Pulsed 0.4 0.5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V Data Sheet G17033EJ1V0DS 3 µ PA2708GR GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 3 VGS(off) - Gate Cut-off Voltage - V 100 | yfs | - Forward Transfer Admittance - S 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 Tch - Channel Temperature - °C Tch = −55°C 25°C 10 75°C 150°C 1 VDS = 10 V Pulsed 0.1 0.01 0.1 1 10 100 VDS = 10 V Pulsed ID - Drain Current - A 20 Pulsed 15 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 ID = 9.0 A Pulsed 15 10 VGS = 4.5 V 5 10 V 0 0.1 1 10 100 ID - Drain Current - A 10 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 15 Ciss, Coss, Crss - Capacitance - pF 10000 Ciss 10 VGS = 4.5 V 5 10 V ID = 9.0 A Pulsed 100 150 1000 Coss Crss 100 VGS = 0 V f = 1 MHz 10 0.1 1 10 100 0 -50 0 50 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V 4 Data Sheet G17033EJ1V0DS µ PA2708GR SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 VDS - Drain to Source Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns 6 VGS - Gate to Source Voltage - V td(off) 100 tf tr VDD = 15 V VGS = 10 V RG = 10 Ω 1 0.1 1 10 100 ID - Drain Current - A 20 VDD = 24 V 15 V 6V 5 4 VGS 3 2 10 td(on) 10 VDS 0 0 10 20 30 40 1 0 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 1000 10 VGS = 10 V 0V trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 100 1 10 di/dt = 100 A/µs VGS = 0 V 1 0.1 1 10 100 0.1 Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 IAS - Single Avalanche Current - A SINGLE AVALANCHE ENERGY DERATING FACTOR 120 IAS = 17 A 100 EAS = 28.9 mJ Energy Derating Factor - % 10 80 60 40 20 0 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 17 A 1 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C 0.1 1 10 0.1 0.01 25 50 75 100 125 150 L - Inductive Load - mH Starting Tch - Starting Channel Temperature - °C Data Sheet G17033EJ1V0DS 5 µ PA2708GR PACKAGE DRAWING (Unit: mm) Power SOP8 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain 1 1.44 4 5.37 MAX. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 0.15 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M EQUIVALENT CIRCUIT Drain Gate Body Diode Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet G17033EJ1V0DS µ PA2708GR • T he information in this document is current as of May, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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