UPA508TE

DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The µ PA508TE is a switching device, which can be driven directly by a 2.5 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low forward voltage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.32 +0.1 –0.05 0.16+0.1 –0.06 0.65 –0.15 +0.1 2.8 ±0.2 5 4 1.5 0 to 0.1 1 2 3 FEATURES • 2.5 V drive available (MOS FET) • Low on-state resistance (MOS FET) RDS(on)1 = 40 mΩ TYP. (VGS = 4.5 V, ID = 1.0 A) RDS(on)2 = 42 mΩ TYP. (VGS = 4.0 V, ID = 1.0 A) RDS(on)3 = 59 mΩ TYP. (VGS = 2.5 V, ID = 1.0 A) • Low forward voltage (Schottky barrier diode) VF = 0.35 V TYP. (IF = 1.0 A) 1.9 2.9 ±0.2 0.9 to 1.1 ORDERING INFORMATION PART NUMBER PACKAGE SC-95_5p (Mini Mold Thin Type) ★ PIN CONNECTION (Top View) 5 4 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain µ PA508TE Marking: ZB 1 2 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD ± 150 V TYP. (C = 200 pF, R = 0 Ω, Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16627EJ1V1DS00 (1st edition) Date Published December 2003 NS CP(K) Printed in Japan The mark ★ shows major revised points. 0.4 0.95 0.95 0.65 2003 µ PA508TE MOS FET ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch 20 ±12 ±2 ±8 0.57 150 V V A A W °C Total Power Dissipation Channel Temperature Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 2500 mm2 x 1.6 mm, t ≤ 5 sec. SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Repetitive Peak Reverse Voltage Average Forward Current Surge Current Note2 Note1 VRRM IF(AV) IFSM Tj Tstg 30 1 10 +125 −55 to +125 V A A °C °C Junction Temperature Storage Temperature Notes 1. Mounted on FR-4 board of 2500 mm2 x 1.6 mm, t ≤ 5 sec 2. 50 Hz sine wave, 1 cycle 2 Data Sheet G16627EJ1V1DS µ PA508TE MOS FET ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS VDS = 20 V, VGS = 0 V VGS = ±12 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 1.0 A VGS = 4.5 V, ID = 1.0 A VGS = 4.0 V, ID = 1.0 A VGS = 2.5 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 10 V, ID = 1.0 A VGS = 4.0 V RG = 10 Ω MIN. TYP. MAX. 1 UNIT µA µA V S ±10 0.5 1.0 1.0 3.3 40 42 59 170 80 40 9 9 15 4 51 57 90 1.5 Forward Transfer Admittance Drain to Source On-state Resistance mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 16 V VGS = 4.0 V ID = 2.0 A IF = 2.0 A, VGS = 0 V 2.7 0.6 1.0 0.81 Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Forward Voltage Reverse Current Terminal Capacitance SYMBOL VF IR CT TEST CONDITIONS IF = 1.0 A V R = 10 V f = 1.0 MHz, VR = 10 V 36 MIN. TYP. 0.35 MAX. 0.38 200 UNIT V µA pF TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS 0 10% IG = 2 mA VGS 90% RL VDD VDD PG. 90% 90% 10% 10% 50 Ω VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Data Sheet G16627EJ1V1DS 3 µ PA508TE MOS FET TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.7 PT - Total Power Dissipation - W 100 0.6 0.5 0.4 0.3 0.2 0.1 0 Mounted on FR-4 board of 2 2500 mm x 1.6 mm 80 60 40 20 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 RDS(on) Limited (at VGS = 4.5 V) 10 ID(DC) 1 PW = 1 ms 10 ms 0.1 Single pulse Mounted on FR-4 board of 2500 mm2 x 1.6 mm 0.1 1 10 100 ms 5s ID(pulse) ID - Drain Current - A 0.01 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 1000 100 10 Single pulse Mounted on FR-4 board of 2 2500 mm x 1.6 mm D (FET) : P (SBD) = 1:0 P 1 100 µ 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 4 Data Sheet G16627EJ1V1DS µ PA508TE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 8 Pulsed FORWARD TRANSFER CHARACTERISTICS 10 ID - Drain Current - A 6 ID - Drain Current - A VGS = 4.5 V 4.0 V 2.5 V 4 1 T A = 125°C 75°C 25°C −25°C 0.1 0.01 2 0.001 VDS = 10 V Pulsed 0 0.5 1 1.5 2 2.5 0 0 0.2 0.4 0.6 0.8 0.0001 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 1.2 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 VDS = 10 V Pulsed TA = −25°C 25°C 75°C 125°C 1 VGS(off) - Gate Cut-off Voltage - V 1.1 VDS = 10 V ID = 1.0 mA 1 0.9 0.8 0.7 0.6 -50 0 50 100 150 0.1 0.01 0.1 1 10 Tch - Channel Temperature - °C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 150 ID = 1.0 A Pulsed 100 VGS = 2.5 V 4.0 V 4.5 V 50 100 50 0 0.01 0 0 2 4 6 8 0.1 1 10 ID - Drain Current - A VGS - Gate to Source Voltage - V Data Sheet G16627EJ1V1DS 5 µ PA508TE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 150 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 RDS(on) - Drain to Source On-state Resistance - mΩ 100 VGS = 2.5 V 4.0 V 4.5 V 50 Ciss, Coss, Crss - Capacitance - pF ID = 1.0 A Pulsed VGS = 0 V f = 1 .0 M H z C is s 100 C oss C rs s 0 -50 0 50 100 150 10 0 .0 1 0 .1 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 DYNAMIC INPUT CHARACTERISTICS 4 VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns VDD = 10 V VGS = 4.0 V RG = 10 Ω ID = 1.0 A VDD = 4.0 V 10 V 16 V 3 t d(off) 10 tr tf t d(on) 2 1 1 0.1 1 10 0 0 0.5 1 1.5 2 2.5 3 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 VGS = 0 V Pulsed IF - Diode Forward Current - A IF - Diode Forward Current - A 1 0.1 0.01 0.4 0.6 0.8 1 VF(S-D) - Source to Drain Voltage - V 6 Data Sheet G16627EJ1V1DS µ PA508TE SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD CURRENT vs. FORWARD VOLTAGE 10 Pulsed 100 REVERSE CURRENT vs. REVERSE VOLTAGE T A = 125°C Pulsed IR - Reverse Current - mA IF - Forward Current - A 10 75°C 1 25°C 1 TA = 125°C 75°C 25°C −25°C 0.1 0.1 0.01 −25°C 0.001 0.01 0 0.2 0.4 0.6 0.8 1 0.0001 0 10 20 30 40 VF – Forward Voltage – V VR – Reverse Voltage - V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 1000 f = 1.0 MHz CT – Terminal Capacitance - A 100 10 0.1 1 10 100 VR – Reverse Voltage - V Data Sheet G16627EJ1V1DS 7 µ PA508TE • T he information in this document is current as of December, 2003. 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