UPA622TT-E1-A

DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA622TT N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA622TT is a switching device which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 2.0 ±0.2 0.25 ±0.1 2.1 ±0.1 6 5 4 1.6 FEATURES • 4.0 V drive available • Low on-state resistance RDS(on)1 = 82 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 120 mΩ MAX. (VGS = 4.5 V, ID = 1.0 A) RDS(on)3 = 139 mΩ MAX. (VGS = 4.0 V, ID = 1.0 A) 0 to 0.05 1 2 3 0.65 0.65 S 0.15 −0.05 +0.1 0.8 MAX. ORDERING INFORMATION PART NUMBER PACKAGE 6 pin WSOF (1620) 0.4 ±0.1 0.05 S µPA622TT-E1-A µPA622TT-E2-A 1, 2, 5, 6: Drain 3 : Gate 4 : Source Remark "-A" indicates Pb-free (This product does not contain Pb in external electrode and other parts.). "-E1" or "-E2" indicates the unit orientation. (8 mm embossed carrier tape, 3000 pcs/reel) Marking: WC 0.2 −0.05 +0.1 0.1 M S ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 VGSS ±20 Gate to Source Voltage (VDS = 0 V) Note1 Drain Current (DC) ID(DC) ±3.0 Note2 Drain Current (pulse) ID(pulse) ±12 0.2 Total Power Dissipation PT1 Note1 Total Power Dissipation PT2 1.3 150 Channel Temperature Tch –55 to +150 Storage Temperature Tstg 2 Notes 1. Mounted on FR-4 board of 5000 mm x 1.1 mm, t ≤ 5 sec. 2. PW ≤ 10 µs, Duty Cycle ≤ 1% V V A A W W °C °C EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode Body Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16113EJ2V0DS00 (2nd edition) Date Published May 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2002 µPA622TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 1.5 A VGS = 10 V, ID = 1.5 A VGS = 4.5 V, ID = 1.0 A VGS = 4.0 V, ID = 1.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 15 V, ID = 1.5 A VGS = 10 V RG = 10 Ω MIN. TYP. MAX. 10 ±10 UNIT µA µA V S 1.5 0.5 2.0 2.1 65 90 104 155 45 27 10 28 75 50 2.5 Drain to Source On-state Resistance 82 120 139 mΩ mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = 24 V VGS = 10 V ID = 3.0 A IF = 3.0 A, VGS = 0 V 3.8 0.7 1.3 0.90 Note Pulsed TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL VGS PG. RG Wave Form D.U.T. VGS 0 10% IG = 2 mA VGS 90% RL VDD VDD PG. 90% 90% 10% 10% 50 Ω VDS VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G16113EJ2V0DS µPA622TT TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 1.6 dT - Percentage of Rated Power - % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 PT - Total Power Dissipation - W 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 Mounted on FR-4 board of 2 5000 m m x 1 .1 m m , t ≤ 5 s ec. 25 50 75 100 125 150 175 TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 R DS(on) L imited (V GS = 1 0 V) ID(pulse) ID - Drain Current - A 10 PW = 1 ms 1 ID(DC) 10 m s 0.1 Single pulse Mounted on FR-4 board o f 2 5000 mm x 1 .1 mm 0.1 1 10 100 m s 5s 0.01 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W 100 10 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm 1 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet G16113EJ2V0DS 3 µPA622TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 12 Pulsed 10 V GS = 1 0 V FORWARD TRANSFER CHARACTERISTICS 10 VDS = 10 V P u ls e d 1 ID - Drain Current - A 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 4.0 V 4.5 V ID - Drain Current - A 0 .1 0 .0 1 T A = 1 2 5 °C 7 5 °C 2 5 °C − 2 5 °C 0 .0 0 1 0 .0 0 0 1 1 1 .5 2 2 .5 3 3 .5 4 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 2.4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 VDS = 10 V Pulsed VGS(off) - Gate Cut-off Voltage - V V DS = 1 0 V ID = 1 .0 m A 2.2 1 T A = − 25°C 25°C 75°C 125°C 0.1 2 1.8 1.6 1 .4 -50 0 50 100 150 0 .01 0.01 0.1 1 10 Tch - Channel Temperature - °C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 200 Pulsed 150 RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 200 Pulsed 150 V GS = 4 .0 V, ID = 1 .0 A V GS = 4 .5 V, ID = 1 .0 A 100 100 ID = 1.5 A 50 50 V G S = 1 0 V, I D = 1 .5 A 0 -50 0 50 100 150 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Tch - Channel Temperature - °C 4 Data Sheet G16113EJ2V0DS µPA622TT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 V GS = 1 0 V Pulsed 150 T A = 1 25°C 100 75°C 25°C − 25°C RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 V GS = 4 .5 V Pulsed 150 T A = 1 25°C 75°C 100 25°C − 25°C 50 50 0 0.01 0.1 1 10 100 0 0.01 0.1 1 10 100 ID - Drain Current - A ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 1000 V G S = 4 .0 V Pulsed 150 T A = 1 25°C 75°C 25°C 100 − 25°C SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns VDD = 15 V VGS = 10 V R G = 10 Ω t d ( o f f) tf tr td (o n ) 100 10 50 0 0.01 1 0.1 1 10 100 0 .1 1 10 ID - Drain Current - A ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 VGS = 0 V f = 1 .0 M H z SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 P ulse d Ciss, Coss, Crss - Capacitance - pF IF - Diode Forward Current - A 10 VGS = 0 V 1 C is s 100 0.1 C oss C rs s 10 0 .1 1 10 100 0 .0 1 0 .4 0 .6 0.8 1 1.2 1.4 VDS - Drain to Source Voltage - V VF(S-D) - Source to Drain Voltage - V Data Sheet G16113EJ2V0DS 5 µPA622TT DYNAMIC INPUT/OUTPUT CHARACTERISTICS 14 I D = 3 .0 A VGS - Gate to Source Voltage - V 12 10 8 6 4 2 0 0 1 2 3 4 V D D = 6 .0 V 15 V 24 V QG - Gate Charge - nC 6 Data Sheet G16113EJ2V0DS µPA622TT • T he information in this document is current as of May, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. • Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1