UPA809T_99

NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN BANDWIDTH: fT = 9 GHz HIGH COLLECTOR CURRENT: 100 mA 0.65 2.0 ± 0.2 1.3 2 1 UPA809T OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 6 0.2 (All Leads) 5 DESCRIPTION The UPA809T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. 3 4 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS VCBO VCEO VEBO IC PT PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die Junction Temperature Storage Temperature UNITS V V V mA mW mW °C °C RATINGS 9 6 2 100 110 200 150 -65 to +150 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package. 0.9 ± 0.1 0.7 0.15 - 0.05 0 ~ 0.1 +0.10 TJ TSTG Note: 1. Operation in excess of any one of these parameters may result in permanent damage. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT Cre2 |S21E|2 NF hFE1/hFE2 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain at VCE = 1 V, IC = 3 mA Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 GHz pF dB dB 0.85 UNITS µA µA 80 110 9.0 0.75 6.5 1.5 0.85 MIN UPA809T S06 TYP MAX 0.1 0.1 160 Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA809T-T1, 3K per reel. California Eastern Laboratories UPA809T TYPICAL PERFORMANCE CURVES (TA = 25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 50 VCE = 1 V Total Power Dissipation, PT (mW) Free Air 200 El em Collector Current, IC (mA) 2 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 en ts Pe in rE lem To t al en t 100 0 50 100 150 0.01 0 0.5 1 Ambient Temperature, TA (°C) Base to Emitter Voltage, VBE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 30 200 µA 200 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 1 V Collector Current, IC (mA) 180 µA 160 µA 20 140 µA 120 µA 100 µA 10 80 µA 60 µA 40 µA lB = 20 µA 0 0 1 2 3 4 5 6 0.1 0.2 0.5 1 2 5 10 20 50 100 DC Current Gain, hFE 100 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 10 INSERTION POWER GAIN vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) 5 Insertion Power Gain, IS21eI2 (dB) VCE = 1 V f= 2 GHz VCE = 1 V f= 2 GHz 5 0 1 2 3 5 7 10 0 1 2 3 5 7 10 Collector Current, IC (mA) Collector Current, IC (mA) UPA809T TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE vs. COLLECTOR CURRENT 3 VCE = 1 V f = 2 GHz FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1 MHz Feddback Capacitance, CRE (pF) Noise Figure, NF (dB) 1.0 2 0.5 f = 1 GHz 1 0 1 2 3 5 7 10 0.1 1 5 10 20 Collector Current, lC (mA) Collector to Base Voltage, VCB (V) MAXIMUM AVAILABLE GAIN/INSERTION POWER GAIN vs. FREQUENCY NOISE FIGURE vs. FREQUENCY VCE = 1 V lc = 5 mA 1.5 Maximum Available Power Gain, MAG (dB) Insertion Power Gain, IS21eI2 (dB) VCE = 1 V lc = 5 mA MAG 20 IS21EI 2 Noise Figure, NF (dB) 0.5 1 5 30 1 10 0 0.1 0.5 0.1 0.5 1.0 2 Frequency, f (GHz) Frequency, f (GHz) ORDERING INFORMATION PART NUMBER UPA809T-T1 QUANTITY 3000 PACKAGING Tape & Reel UPA809T BJT NONLINEAR MODEL PARAMETERS (1) Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1, Q2 3.8e-16 135.7 1 28 0.6 3.8e-15 1.49 12.3 1.1 3.5 0.06 3.5e-16 1.62 0.4 6.14 3.5 0.001 4.2 0.796e-12 0.71 0.38 0.45e-12 0.65 MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1, Q2 0.48 0.56 0 0.75 0 0.75 9e-12 0.36 0.65 0.61 50 32e-12 1.11 0 3 0 1 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps (1) Gummel-Poon Model Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UPA809T NONLINEAR MODEL SCHEMATIC 0.07 pF C_C1B2 0.1 pF CCBPKG1 LC Pin_1 0.05 nH 0.3 pF CCB1 LB1 C_C1E1 0.05 pF LE Pin_2 0.05 nH CCE1 0.19 pF LE1 0.95 nH C_E1B2 0.3 pF LB2 0.65 nH C_B1B2 0.05 pF LB 0.05 nH C_B2E2 0.05 pF LE2 0.8 nH 0.19 pF CCE2 0.1 pF CCEPKG2 0.06 pF CCBPKG2 LE 0.05 nH Pin_4 Pin_5 LB 0.05 nH Pin_6 Q1 0.55 nH C_E1C2 0.05 pF CCB2 0.3 pF Q2 LC Pin_3 0.05 nH MODEL RANGE Frequency: 0.1 to 3.0 GHz Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES ¥ Headquarters ¥ 4590 Patrick Henry Drive ¥ Santa Clara, CA 95054-1817 ¥ (408) 988-3500 ¥ Telex 34-6393 ¥ FAX (408) 988-02 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) ¥ Internet: http://WWW.CEL.COM 8/99 DATA SUBJECT TO CHANGE WITHOUT NOTICE